IT964544B - Tiristore - Google Patents

Tiristore

Info

Publication number
IT964544B
IT964544B IT28111/72A IT2811172A IT964544B IT 964544 B IT964544 B IT 964544B IT 28111/72 A IT28111/72 A IT 28111/72A IT 2811172 A IT2811172 A IT 2811172A IT 964544 B IT964544 B IT 964544B
Authority
IT
Italy
Prior art keywords
tyristor
Prior art date
Application number
IT28111/72A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT964544B publication Critical patent/IT964544B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
IT28111/72A 1971-08-19 1972-08-11 Tiristore IT964544B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2141627A DE2141627C3 (de) 1971-08-19 1971-08-19 Thyristor

Publications (1)

Publication Number Publication Date
IT964544B true IT964544B (it) 1974-01-31

Family

ID=5817211

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28111/72A IT964544B (it) 1971-08-19 1972-08-11 Tiristore

Country Status (9)

Country Link
US (1) US3771029A (it)
JP (1) JPS551706B2 (it)
CH (1) CH542516A (it)
DE (1) DE2141627C3 (it)
FR (1) FR2149486B1 (it)
GB (1) GB1344605A (it)
IT (1) IT964544B (it)
NL (1) NL7209354A (it)
SE (1) SE372660B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4083063A (en) * 1973-10-09 1978-04-04 General Electric Company Gate turnoff thyristor with a pilot scr
JPS586312B2 (ja) * 1975-04-04 1983-02-03 三菱電機株式会社 ハンドウタイセイギヨソウチ
JPS522304A (en) * 1975-06-24 1977-01-10 Kokusai Electric Co Ltd Data transmitting system
DE2534703C3 (de) * 1975-08-04 1980-03-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
JPS583387B2 (ja) * 1975-12-29 1983-01-21 三菱電機株式会社 ハンドウタイソウチ
JPS583388B2 (ja) * 1975-12-29 1983-01-21 三菱電機株式会社 ハンドウタイソウチ
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
ZA775629B (en) * 1976-10-29 1978-08-30 Westinghouse Electric Corp An improvement in or relating to thyristor fired by collapsing voltage
US4079403A (en) * 1976-11-01 1978-03-14 Electric Power Research Institute, Inc. Thyristor device with self-protection against breakover turn-on failure
JPS61110176U (it) * 1984-12-24 1986-07-12
IE861474L (en) * 1985-06-20 1986-12-20 Tsnii Kozhevenno Obuvnoi Ptomy Temperature stable self-protected thyristor and method of¹producing
FR2586141B1 (fr) * 1985-08-06 1987-11-20 Thomson Csf Thyristor sensible a decouplage gachette-cathode integre
JPS6293671A (ja) * 1985-10-18 1987-04-30 Yaskawa Electric Mfg Co Ltd 低電圧検出回路
DE4403429C2 (de) * 1994-02-04 1997-09-18 Asea Brown Boveri Abschaltbares Halbleiterbauelement

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3124703A (en) * 1960-06-13 1964-03-10 Figure
CH495631A (de) * 1964-11-28 1970-08-31 Licentia Gmbh Steuerbarer Halbleitergleichrichter
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
SE335389B (it) * 1966-10-25 1971-05-24 Asea Ab
US3549961A (en) * 1968-06-19 1970-12-22 Int Rectifier Corp Triac structure and method of manufacture
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
US3586932A (en) * 1969-12-12 1971-06-22 Gen Electric Five layer gate controlled thyristor with novel turn on characteristics

Also Published As

Publication number Publication date
SE372660B (it) 1974-12-23
DE2141627A1 (de) 1973-02-22
NL7209354A (it) 1973-02-21
FR2149486B1 (it) 1977-04-01
JPS4830885A (it) 1973-04-23
CH542516A (de) 1973-09-30
JPS551706B2 (it) 1980-01-16
FR2149486A1 (it) 1973-03-30
DE2141627B2 (it) 1978-10-12
GB1344605A (en) 1974-01-23
US3771029A (en) 1973-11-06
DE2141627C3 (de) 1979-06-13

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