SE335389B - - Google Patents

Info

Publication number
SE335389B
SE335389B SE1460666A SE1460666A SE335389B SE 335389 B SE335389 B SE 335389B SE 1460666 A SE1460666 A SE 1460666A SE 1460666 A SE1460666 A SE 1460666A SE 335389 B SE335389 B SE 335389B
Authority
SE
Sweden
Application number
SE1460666A
Inventor
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE1460666A priority Critical patent/SE335389B/xx
Priority to DE19671589478 priority patent/DE1589478A1/de
Priority to CH1481267A priority patent/CH478459A/de
Priority to US3566211D priority patent/US3566211A/en
Priority to GB4827867A priority patent/GB1193096A/en
Priority to NL6714497A priority patent/NL6714497A/xx
Priority to FR125807A priority patent/FR1541894A/fr
Publication of SE335389B publication Critical patent/SE335389B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
SE1460666A 1966-10-25 1966-10-25 SE335389B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE1460666A SE335389B (it) 1966-10-25 1966-10-25
DE19671589478 DE1589478A1 (de) 1966-10-25 1967-10-20 Halbleiteranordnung
CH1481267A CH478459A (de) 1966-10-25 1967-10-21 Thyristor
US3566211D US3566211A (en) 1966-10-25 1967-10-23 Thyristor-type semiconductor device with auxiliary starting electrodes
GB4827867A GB1193096A (en) 1966-10-25 1967-10-24 Semi Conductor Device.
NL6714497A NL6714497A (it) 1966-10-25 1967-10-25
FR125807A FR1541894A (fr) 1966-10-25 1967-10-25 Dispositif à semi-conducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE1460666A SE335389B (it) 1966-10-25 1966-10-25

Publications (1)

Publication Number Publication Date
SE335389B true SE335389B (it) 1971-05-24

Family

ID=20299378

Family Applications (1)

Application Number Title Priority Date Filing Date
SE1460666A SE335389B (it) 1966-10-25 1966-10-25

Country Status (6)

Country Link
US (1) US3566211A (it)
CH (1) CH478459A (it)
DE (1) DE1589478A1 (it)
GB (1) GB1193096A (it)
NL (1) NL6714497A (it)
SE (1) SE335389B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH460957A (de) * 1967-08-03 1968-08-15 Bbc Brown Boveri & Cie Schaltungsanordnung mit mehreren Halbleiterelementen
US3978513A (en) * 1971-05-21 1976-08-31 Hitachi, Ltd. Semiconductor controlled rectifying device
BE787241A (fr) * 1971-08-06 1973-02-05 Siemens Ag Thyristor
DE2141627C3 (de) * 1971-08-19 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
JPS4936290A (it) * 1972-03-02 1974-04-04
JPS541437B2 (it) * 1973-04-18 1979-01-24
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
GB1499203A (en) * 1975-02-04 1978-01-25 Standard Telephones Cables Ltd Thyristor structure to facilitate zero point switching
JPS5927108B2 (ja) * 1975-02-07 1984-07-03 株式会社日立製作所 半導体制御整流装置
US4012761A (en) * 1976-04-19 1977-03-15 General Electric Company Self-protected semiconductor device
DE2730612C2 (de) * 1977-07-07 1982-02-04 Brown, Boveri & Cie Ag, 6800 Mannheim Betriebsschaltung für einen Thyristor
GB2036429B (en) * 1978-03-23 1982-09-15 Bbc Brown Boveri & Cie Semiconductor device comprising at least two semiconductor elements
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
PL2819174T3 (pl) * 2013-06-24 2017-03-31 Silergy Corp. Tyrystor, metoda wyzwalania tyrystora i obwody tyrystorowe

Also Published As

Publication number Publication date
US3566211A (en) 1971-02-23
DE1589478A1 (de) 1970-04-09
NL6714497A (it) 1968-04-26
CH478459A (de) 1969-09-15
GB1193096A (en) 1970-05-28

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