PL2819174T3 - Tyrystor, metoda wyzwalania tyrystora i obwody tyrystorowe - Google Patents

Tyrystor, metoda wyzwalania tyrystora i obwody tyrystorowe

Info

Publication number
PL2819174T3
PL2819174T3 PL13173359T PL13173359T PL2819174T3 PL 2819174 T3 PL2819174 T3 PL 2819174T3 PL 13173359 T PL13173359 T PL 13173359T PL 13173359 T PL13173359 T PL 13173359T PL 2819174 T3 PL2819174 T3 PL 2819174T3
Authority
PL
Poland
Prior art keywords
thyristor
triggering
circuits
thyristor circuits
Prior art date
Application number
PL13173359T
Other languages
English (en)
Inventor
Dalen Rob Van
Maarten Swanenberg
Inesz Emmerik-Weijland
Original Assignee
Silergy Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silergy Corp. filed Critical Silergy Corp.
Publication of PL2819174T3 publication Critical patent/PL2819174T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
PL13173359T 2013-06-24 2013-06-24 Tyrystor, metoda wyzwalania tyrystora i obwody tyrystorowe PL2819174T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP13173359.4A EP2819174B1 (en) 2013-06-24 2013-06-24 A thyristor, a method of triggering a thyristor, and thyristor circuits

Publications (1)

Publication Number Publication Date
PL2819174T3 true PL2819174T3 (pl) 2017-03-31

Family

ID=48669808

Family Applications (1)

Application Number Title Priority Date Filing Date
PL13173359T PL2819174T3 (pl) 2013-06-24 2013-06-24 Tyrystor, metoda wyzwalania tyrystora i obwody tyrystorowe

Country Status (6)

Country Link
US (1) US9871129B2 (pl)
EP (1) EP2819174B1 (pl)
CN (1) CN104242888B (pl)
ES (1) ES2612203T3 (pl)
PL (1) PL2819174T3 (pl)
PT (1) PT2819174T (pl)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE335389B (pl) * 1966-10-25 1971-05-24 Asea Ab
BE787241A (fr) * 1971-08-06 1973-02-05 Siemens Ag Thyristor
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
DE3580468D1 (de) * 1984-06-29 1990-12-13 Gen Electric Gesteuerter einschaltbarer thyristor.
JPS62110435A (ja) * 1985-11-04 1987-05-21 シ−メンス、アクチエンゲゼルシヤフト 加入者線の過電圧保護用集積回路装置
DE3881264T2 (de) * 1987-03-31 1993-11-25 Toshiba Kawasaki Kk Gate-steuerbare bilaterale Halbleiterschaltungsanordnung.
FR2708811B1 (fr) 1993-08-06 1995-10-20 Sgs Thomson Microelectronics Thyristor à amplification de gachette à courant de maintien accru.
DE102008031029B4 (de) * 2008-06-30 2012-10-31 Texas Instruments Deutschland Gmbh Elektronisches Bauelement mit einer Schutzschaltung für eine lichtemittierende Vorrichtung

Also Published As

Publication number Publication date
EP2819174A1 (en) 2014-12-31
CN104242888B (zh) 2018-12-04
US20140375377A1 (en) 2014-12-25
ES2612203T3 (es) 2017-05-12
CN104242888A (zh) 2014-12-24
US9871129B2 (en) 2018-01-16
PT2819174T (pt) 2017-02-02
EP2819174B1 (en) 2016-10-26

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