IT960642B - Procedimento per la produzione di monocristalli a iii bv senza dislocazioni - Google Patents
Procedimento per la produzione di monocristalli a iii bv senza dislocazioniInfo
- Publication number
- IT960642B IT960642B IT2475172A IT2475172A IT960642B IT 960642 B IT960642 B IT 960642B IT 2475172 A IT2475172 A IT 2475172A IT 2475172 A IT2475172 A IT 2475172A IT 960642 B IT960642 B IT 960642B
- Authority
- IT
- Italy
- Prior art keywords
- monocrystals
- displacements
- iii
- procedure
- production
- Prior art date
Links
- 238000006073 displacement reaction Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2126662A DE2126662C3 (de) | 1971-05-28 | 1971-05-28 | Verfahren zur Herstellung eines Einkristallstabes aus einer halbleitenden A(HI)B(V)-Verbindung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT960642B true IT960642B (it) | 1973-11-30 |
Family
ID=5809247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2475172A IT960642B (it) | 1971-05-28 | 1972-05-24 | Procedimento per la produzione di monocristalli a iii bv senza dislocazioni |
Country Status (10)
| Country | Link |
|---|---|
| AT (1) | AT337780B (de) |
| BE (1) | BE784033A (de) |
| CA (1) | CA968672A (de) |
| CH (1) | CH576281A5 (de) |
| DE (1) | DE2126662C3 (de) |
| FR (1) | FR2139939B1 (de) |
| GB (1) | GB1388286A (de) |
| IT (1) | IT960642B (de) |
| LU (1) | LU65428A1 (de) |
| NL (1) | NL7207055A (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2420899A1 (de) * | 1974-04-30 | 1975-12-11 | Wacker Chemitronic | Verfahren zur herstellung von einkristallinem galliumarsenid |
| JPS5913693A (ja) * | 1982-07-15 | 1984-01-24 | Toshiba Corp | 化合物半導体単結晶育成装置 |
| DE3640868A1 (de) * | 1986-11-29 | 1988-06-09 | Leybold Ag | Einrichtung zur bestimmung des durchmessers eines kristalls beim ziehen aus einer schmelze |
| DE10025863A1 (de) | 2000-05-25 | 2001-12-06 | Wacker Chemie Gmbh | Chargiergut und Halterungssystem für das Chargiergut |
| CN103757691B (zh) * | 2014-01-10 | 2016-04-20 | 英利集团有限公司 | 多晶硅料复投方法 |
| CN114481051A (zh) * | 2022-01-11 | 2022-05-13 | 先导薄膜材料（广东）有限公司 | 一种锗靶材及其制备装置、制备方法 |
-
1971
- 1971-05-28 DE DE2126662A patent/DE2126662C3/de not_active Expired
-
1972
- 1972-04-26 CH CH622072A patent/CH576281A5/xx not_active IP Right Cessation
- 1972-05-12 AT AT417072A patent/AT337780B/de active
- 1972-05-24 IT IT2475172A patent/IT960642B/it active
- 1972-05-25 NL NL7207055A patent/NL7207055A/xx unknown
- 1972-05-25 FR FR7218737A patent/FR2139939B1/fr not_active Expired
- 1972-05-26 BE BE784033A patent/BE784033A/xx unknown
- 1972-05-26 LU LU65428D patent/LU65428A1/xx unknown
- 1972-05-26 GB GB2509772A patent/GB1388286A/en not_active Expired
- 1972-05-26 CA CA143,130A patent/CA968672A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| ATA417072A (de) | 1976-11-15 |
| CA968672A (en) | 1975-06-03 |
| DE2126662A1 (de) | 1972-12-07 |
| DE2126662B2 (de) | 1977-06-23 |
| BE784033A (fr) | 1972-11-27 |
| CH576281A5 (de) | 1976-06-15 |
| NL7207055A (de) | 1972-11-30 |
| LU65428A1 (de) | 1972-08-24 |
| FR2139939A1 (de) | 1973-01-12 |
| FR2139939B1 (de) | 1976-03-12 |
| AT337780B (de) | 1977-07-25 |
| DE2126662C3 (de) | 1978-11-09 |
| GB1388286A (en) | 1975-03-26 |
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