IT956761B - Metodo di fabbricazione di un dispo sitivo semiconduttore e dispositivo ottenuto con l ausilio di tale me todo
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Metodo di fabbricazione di un dispo sitivo semiconduttore e dispositivo ottenuto con l ausilio di tale me todo
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IT956761B
IT956761BIT26010/72AIT2601072AIT956761BIT 956761 BIT956761 BIT 956761BIT 26010/72 AIT26010/72 AIT 26010/72AIT 2601072 AIT2601072 AIT 2601072AIT 956761 BIT956761 BIT 956761B
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H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D30/00—Field-effect transistors [FET]
H10D30/01—Manufacture or treatment
H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D99/00—Subject matter not provided for in other groups of this subclass
H10P95/00—
IT26010/72A1971-06-251972-06-21Metodo di fabbricazione di un dispo sitivo semiconduttore e dispositivo ottenuto con l ausilio di tale me todo
IT956761B
(it)