IT947677B - Procedimento per il deposito di strati magnetizzabili mediante spruzzatura catodica - Google Patents

Procedimento per il deposito di strati magnetizzabili mediante spruzzatura catodica

Info

Publication number
IT947677B
IT947677B IT2071672A IT2071672A IT947677B IT 947677 B IT947677 B IT 947677B IT 2071672 A IT2071672 A IT 2071672A IT 2071672 A IT2071672 A IT 2071672A IT 947677 B IT947677 B IT 947677B
Authority
IT
Italy
Prior art keywords
deposit
procedure
magnetizable layers
cathodic spraying
cathodic
Prior art date
Application number
IT2071672A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT947677B publication Critical patent/IT947677B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/265—Magnetic multilayers non exchange-coupled

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)
IT2071672A 1971-05-29 1972-02-18 Procedimento per il deposito di strati magnetizzabili mediante spruzzatura catodica IT947677B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712126887 DE2126887C3 (de) 1971-05-29 1971-05-29 Niederschlagen magnetisierbarer Schichten durch Kathodenzerstäubung

Publications (1)

Publication Number Publication Date
IT947677B true IT947677B (it) 1973-05-30

Family

ID=5809356

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2071672A IT947677B (it) 1971-05-29 1972-02-18 Procedimento per il deposito di strati magnetizzabili mediante spruzzatura catodica

Country Status (6)

Country Link
JP (1) JPS5328631B1 (OSRAM)
CA (1) CA984334A (OSRAM)
DE (1) DE2126887C3 (OSRAM)
FR (1) FR2139841B1 (OSRAM)
GB (1) GB1331038A (OSRAM)
IT (1) IT947677B (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5155995A (en) * 1974-11-12 1976-05-17 Nippon Telegraph & Telephone Sankabutsujiseihakumakuno seizohoho
CH595458A5 (OSRAM) * 1975-03-07 1978-02-15 Balzers Patent Beteilig Ag
US4481999A (en) * 1982-02-23 1984-11-13 The United States Of America As Represented By The United States Department Of Energy Method of forming a thin unbacked metal foil
JPS60138720A (ja) * 1983-12-27 1985-07-23 Sharp Corp 垂直磁気記録媒体
JPS6115941A (ja) * 1984-06-30 1986-01-24 Res Dev Corp Of Japan 酸素を含む強磁性非晶質合金およびその製造法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3400066A (en) * 1965-11-15 1968-09-03 Ibm Sputtering processes for depositing thin films of controlled thickness
DE1955716A1 (de) * 1969-11-05 1971-05-13 Siemens Ag Verfahren zum Herstellen gut haftender Metallkontaktschichten insbesondere fuer Halbleiterbauelemente in Beam-Lead-Technik

Also Published As

Publication number Publication date
FR2139841B1 (OSRAM) 1978-03-03
DE2126887C3 (de) 1981-11-19
FR2139841A1 (OSRAM) 1973-01-12
DE2126887B2 (de) 1981-01-08
CA984334A (en) 1976-02-24
JPS5328631B1 (OSRAM) 1978-08-16
GB1331038A (en) 1973-09-19
DE2126887A1 (de) 1972-11-30

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