IT940667B - Procedimento atto ad ottenere per diffusione complementare porte di silicio nei circouiti integrati monolitici allo stato solido - Google Patents
Procedimento atto ad ottenere per diffusione complementare porte di silicio nei circouiti integrati monolitici allo stato solidoInfo
- Publication number
- IT940667B IT940667B IT31256/71A IT3125671A IT940667B IT 940667 B IT940667 B IT 940667B IT 31256/71 A IT31256/71 A IT 31256/71A IT 3125671 A IT3125671 A IT 3125671A IT 940667 B IT940667 B IT 940667B
- Authority
- IT
- Italy
- Prior art keywords
- circouits
- ports
- silicon
- procedure
- obtaining
- Prior art date
Links
Classifications
-
- H10P95/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2058660 | 1970-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT940667B true IT940667B (it) | 1973-02-20 |
Family
ID=5789394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT31256/71A IT940667B (it) | 1970-11-28 | 1971-11-18 | Procedimento atto ad ottenere per diffusione complementare porte di silicio nei circouiti integrati monolitici allo stato solido |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH537643A (en:Method) |
| DE (1) | DE2058660B1 (en:Method) |
| FR (1) | FR2115404B1 (en:Method) |
| GB (1) | GB1308288A (en:Method) |
| IT (1) | IT940667B (en:Method) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3821781A (en) * | 1972-11-01 | 1974-06-28 | Ibm | Complementary field effect transistors having p doped silicon gates |
-
1970
- 1970-11-28 DE DE19702058660D patent/DE2058660B1/de active Pending
-
1971
- 1971-11-18 IT IT31256/71A patent/IT940667B/it active
- 1971-11-25 GB GB5478471A patent/GB1308288A/en not_active Expired
- 1971-11-25 FR FR7142266A patent/FR2115404B1/fr not_active Expired
- 1971-11-26 CH CH1722071A patent/CH537643A/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB1308288A (en) | 1973-02-21 |
| FR2115404A1 (en:Method) | 1972-07-07 |
| DE2058660B1 (de) | 1972-06-08 |
| CH537643A (de) | 1973-05-31 |
| FR2115404B1 (en:Method) | 1975-08-29 |
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