IT940667B - Procedimento atto ad ottenere per diffusione complementare porte di silicio nei circouiti integrati monolitici allo stato solido - Google Patents

Procedimento atto ad ottenere per diffusione complementare porte di silicio nei circouiti integrati monolitici allo stato solido

Info

Publication number
IT940667B
IT940667B IT31256/71A IT3125671A IT940667B IT 940667 B IT940667 B IT 940667B IT 31256/71 A IT31256/71 A IT 31256/71A IT 3125671 A IT3125671 A IT 3125671A IT 940667 B IT940667 B IT 940667B
Authority
IT
Italy
Prior art keywords
circouits
ports
silicon
procedure
obtaining
Prior art date
Application number
IT31256/71A
Other languages
English (en)
Italian (it)
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Application granted granted Critical
Publication of IT940667B publication Critical patent/IT940667B/it

Links

Classifications

    • H10P95/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0123Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
IT31256/71A 1970-11-28 1971-11-18 Procedimento atto ad ottenere per diffusione complementare porte di silicio nei circouiti integrati monolitici allo stato solido IT940667B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2058660 1970-11-28

Publications (1)

Publication Number Publication Date
IT940667B true IT940667B (it) 1973-02-20

Family

ID=5789394

Family Applications (1)

Application Number Title Priority Date Filing Date
IT31256/71A IT940667B (it) 1970-11-28 1971-11-18 Procedimento atto ad ottenere per diffusione complementare porte di silicio nei circouiti integrati monolitici allo stato solido

Country Status (5)

Country Link
CH (1) CH537643A (en:Method)
DE (1) DE2058660B1 (en:Method)
FR (1) FR2115404B1 (en:Method)
GB (1) GB1308288A (en:Method)
IT (1) IT940667B (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821781A (en) * 1972-11-01 1974-06-28 Ibm Complementary field effect transistors having p doped silicon gates

Also Published As

Publication number Publication date
GB1308288A (en) 1973-02-21
FR2115404A1 (en:Method) 1972-07-07
DE2058660B1 (de) 1972-06-08
CH537643A (de) 1973-05-31
FR2115404B1 (en:Method) 1975-08-29

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