IT9083649A0 - Memoria flash eprom cancellabile per gruppi di celle mediante doppia meta' - Google Patents

Memoria flash eprom cancellabile per gruppi di celle mediante doppia meta'

Info

Publication number
IT9083649A0
IT9083649A0 IT83649A IT8364990A IT9083649A0 IT 9083649 A0 IT9083649 A0 IT 9083649A0 IT 83649 A IT83649 A IT 83649A IT 8364990 A IT8364990 A IT 8364990A IT 9083649 A0 IT9083649 A0 IT 9083649A0
Authority
IT
Italy
Prior art keywords
cells
groups
eprom memory
flash eprom
double half
Prior art date
Application number
IT83649A
Other languages
English (en)
Other versions
IT9083649A1 (it
IT1247654B (it
Inventor
Virginia Natale
Gianluca Petrosino
Flavio Scarra
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT08364990A priority Critical patent/IT1247654B/it
Publication of IT9083649A0 publication Critical patent/IT9083649A0/it
Priority to EP91830496A priority patent/EP0486444B1/en
Priority to DE69121521T priority patent/DE69121521T2/de
Priority to US07/792,478 priority patent/US5289423A/en
Priority to JP32800891A priority patent/JPH0697394A/ja
Publication of IT9083649A1 publication Critical patent/IT9083649A1/it
Application granted granted Critical
Publication of IT1247654B publication Critical patent/IT1247654B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
IT08364990A 1990-11-16 1990-11-16 Memoria flash eprom cancellabile per gruppi di celle mediante doppia mmetal IT1247654B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT08364990A IT1247654B (it) 1990-11-16 1990-11-16 Memoria flash eprom cancellabile per gruppi di celle mediante doppia mmetal
EP91830496A EP0486444B1 (en) 1990-11-16 1991-11-13 Double metal, bank erasable, flash-EPROM memory
DE69121521T DE69121521T2 (de) 1990-11-16 1991-11-13 Aggregatslöschbare Flash-EPROM-Anordnung mit zwei Metallschichten
US07/792,478 US5289423A (en) 1990-11-16 1991-11-15 Bank erasable, flash-EPROM memory
JP32800891A JPH0697394A (ja) 1990-11-16 1991-11-16 バンク消去可能なダブル金属ｆｌａｓｈ−ｅｐｒｏｍメモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT08364990A IT1247654B (it) 1990-11-16 1990-11-16 Memoria flash eprom cancellabile per gruppi di celle mediante doppia mmetal

Publications (3)

Publication Number Publication Date
IT9083649A0 true IT9083649A0 (it) 1990-11-16
IT9083649A1 IT9083649A1 (it) 1992-05-17
IT1247654B IT1247654B (it) 1994-12-28

Family

ID=11323632

Family Applications (1)

Application Number Title Priority Date Filing Date
IT08364990A IT1247654B (it) 1990-11-16 1990-11-16 Memoria flash eprom cancellabile per gruppi di celle mediante doppia mmetal

Country Status (4)

Country Link
EP (1) EP0486444B1 (it)
JP (1) JPH0697394A (it)
DE (1) DE69121521T2 (it)
IT (1) IT1247654B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5966332A (en) * 1995-11-29 1999-10-12 Sanyo Electric Co., Ltd. Floating gate memory cell array allowing cell-by-cell erasure
EP0802569B1 (en) * 1996-04-15 2003-09-24 STMicroelectronics S.r.l. FLASH-EPROM integrated with EEPROM
IT1284185B1 (it) * 1996-06-28 1998-05-08 Texas Instruments Italia Spa Matrice di memoria flash eeprom orizzontalmente settorizzata per operazioni di cancellazione.
US5751038A (en) * 1996-11-26 1998-05-12 Philips Electronics North America Corporation Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers
DE10127350C1 (de) * 2001-06-06 2003-02-13 Infineon Technologies Ag Halbleiterstruktur mit vergrabenen Leiterbahnen sowie Verfahren zur elektrischen Kontaktierung der vergrabenen Leiterbahnen

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1213241B (it) * 1984-11-07 1989-12-14 Ates Componenti Elettron Matrice di memoria eprom con celle elementari simmetriche mos e suo metodo di scrittura.
IT1236601B (it) * 1989-12-22 1993-03-18 Sgs Thomson Microelectronics Dispositivo a semiconduttore integrato di tipo eprom con connessioni metalliche di source e procedimento per la sua fabbricazione.

Also Published As

Publication number Publication date
JPH0697394A (ja) 1994-04-08
EP0486444A3 (en) 1993-06-02
EP0486444A2 (en) 1992-05-20
IT9083649A1 (it) 1992-05-17
DE69121521T2 (de) 1997-01-02
IT1247654B (it) 1994-12-28
EP0486444B1 (en) 1996-08-21
DE69121521D1 (de) 1996-09-26

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971129