IT8823166A0 - Procedimento e dispositivo per l'analisi quantitativa e differenziale in profondita' di provini solidi con l'impiego di due raggi ionici - Google Patents

Procedimento e dispositivo per l'analisi quantitativa e differenziale in profondita' di provini solidi con l'impiego di due raggi ionici

Info

Publication number
IT8823166A0
IT8823166A0 IT8823166A IT2316688A IT8823166A0 IT 8823166 A0 IT8823166 A0 IT 8823166A0 IT 8823166 A IT8823166 A IT 8823166A IT 2316688 A IT2316688 A IT 2316688A IT 8823166 A0 IT8823166 A0 IT 8823166A0
Authority
IT
Italy
Prior art keywords
quantitative
differential
procedure
depth analysis
solid specimens
Prior art date
Application number
IT8823166A
Other languages
English (en)
Other versions
IT1230178B (it
Inventor
Klaus Wittmaack
Original Assignee
Strahlen Und Ges
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Strahlen Und Ges filed Critical Strahlen Und Ges
Publication of IT8823166A0 publication Critical patent/IT8823166A0/it
Application granted granted Critical
Publication of IT1230178B publication Critical patent/IT1230178B/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
IT8823166A 1988-02-05 1988-12-30 Procedimento e dispositivo per l'analisi quantitativa e differenziale in profondita' di provini solidi con l'impiego di due raggi ionici IT1230178B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3803424A DE3803424C2 (de) 1988-02-05 1988-02-05 Verfahren zur quantitativen, tiefendifferentiellen Analyse fester Proben

Publications (2)

Publication Number Publication Date
IT8823166A0 true IT8823166A0 (it) 1988-12-30
IT1230178B IT1230178B (it) 1991-10-18

Family

ID=6346682

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8823166A IT1230178B (it) 1988-02-05 1988-12-30 Procedimento e dispositivo per l'analisi quantitativa e differenziale in profondita' di provini solidi con l'impiego di due raggi ionici

Country Status (6)

Country Link
US (1) US4982090A (it)
JP (1) JP2740231B2 (it)
DE (1) DE3803424C2 (it)
FR (1) FR2626976B1 (it)
GB (1) GB2215909B (it)
IT (1) IT1230178B (it)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3803424C2 (de) 1988-02-05 1995-05-18 Gsf Forschungszentrum Umwelt Verfahren zur quantitativen, tiefendifferentiellen Analyse fester Proben
DE4028044A1 (de) * 1990-09-05 1992-03-12 Geesthacht Gkss Forschung Verfahren und vorrichtung zur analyse und bestimmung der konzentration von elementen in vorbestimmten tiefen von objekten
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
WO1998052216A1 (en) * 1997-05-12 1998-11-19 Silicon Genesis Corporation A controlled cleavage process
US6245161B1 (en) * 1997-05-12 2001-06-12 Silicon Genesis Corporation Economical silicon-on-silicon hybrid wafer assembly
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6548382B1 (en) * 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6255662B1 (en) * 1998-10-27 2001-07-03 Axcelis Technologies, Inc. Rutherford backscattering detection for use in Ion implantation
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
AU6905000A (en) * 1999-08-10 2001-03-05 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US6373070B1 (en) 1999-10-12 2002-04-16 Fei Company Method apparatus for a coaxial optical microscope with focused ion beam
FR2806527B1 (fr) * 2000-03-20 2002-10-25 Schlumberger Technologies Inc Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique
US6465776B1 (en) 2000-06-02 2002-10-15 Board Of Regents, The University Of Texas System Mass spectrometer apparatus for analyzing multiple fluid samples concurrently
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) * 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) * 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
FR2889887B1 (fr) * 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
JP5127148B2 (ja) * 2006-03-16 2013-01-23 株式会社日立ハイテクノロジーズ イオンビーム加工装置
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
FR2910179B1 (fr) * 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2925221B1 (fr) * 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
FR2947098A1 (fr) * 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3415985A (en) * 1962-11-28 1968-12-10 Centre Nat Rech Scient Ionic microanalyzer wherein secondary ions are emitted from a sample surface upon bombardment by neutral atoms
NL7306378A (it) * 1973-05-08 1974-11-12
NL7317436A (nl) * 1973-12-20 1975-06-24 Philips Nv Inrichting voor massa-analyse en structuur-analyse van een oppervlaklaag door middel van ionenver- strooiing.
US3916190A (en) * 1974-03-01 1975-10-28 Minnesota Mining & Mfg Depth profile analysis apparatus
US4088895A (en) * 1977-07-08 1978-05-09 Martin Frederick Wight Memory device utilizing ion beam readout
DE3128814A1 (de) * 1981-07-21 1983-02-10 Siemens AG, 1000 Berlin und 8000 München Elektrisch leitende probenhalterung fuer die analysentechnik der sekundaerionen-massenspektrometrie
DE3475585D1 (en) * 1984-09-27 1989-01-12 Leybold Ag Apparatus for the sputtered neutral mass spectrometry
US4633084A (en) * 1985-01-16 1986-12-30 The United States Of America As Represented By The United States Department Of Energy High efficiency direct detection of ions from resonance ionization of sputtered atoms
IE58049B1 (en) * 1985-05-21 1993-06-16 Tekscan Ltd Surface analysis microscopy apparatus
DE3803424C2 (de) 1988-02-05 1995-05-18 Gsf Forschungszentrum Umwelt Verfahren zur quantitativen, tiefendifferentiellen Analyse fester Proben
JPH0739987B2 (ja) * 1988-06-28 1995-05-01 川崎製鉄株式会社 皮膜の厚みと組成の同時測定方法

Also Published As

Publication number Publication date
JP2740231B2 (ja) 1998-04-15
JPH01217249A (ja) 1989-08-30
GB2215909B (en) 1992-09-16
GB2215909A (en) 1989-09-27
IT1230178B (it) 1991-10-18
FR2626976B1 (fr) 1993-04-30
DE3803424A1 (de) 1989-08-17
US4982090A (en) 1991-01-01
FR2626976A1 (fr) 1989-08-11
DE3803424C2 (de) 1995-05-18

Similar Documents

Publication Publication Date Title
IT8823166A0 (it) Procedimento e dispositivo per l'analisi quantitativa e differenziale in profondita' di provini solidi con l'impiego di due raggi ionici
FI904254A7 (fi) Menetelmät ja koostumukset patologisten hydrofobisten vaikutusten käsi ttelemiseksi biologisissa nesteissä
IT8168728A0 (it) Dispositivo per l analisi di fluidi in particolare di fluidi biologici
IT1196349B (it) Dispositivo per le analisi chimiche ed impiego di esso
IT1189013B (it) Apparecchiatura e procedimento per l'impiego in saldatura
AU3045392A (en) Specimen containing block for use in the preparation of multi-specimen slides for immunohistologic procedures
IT8047626A0 (it) Procedimento e dispositivo sono-attinico di pulizia ed asepsi in particolare per strumenti chirurgici e simili
DE3366234D1 (en) Sampling device for use in the sampling of biological fluids
IT1096003B (it) Procedimento e dispositivo per l'analisi di particelle
FI902179A7 (fi) Korkean lämpötilan ja voimakkaan säteilyn omaavissa nestemäisissä ympäristöissä käytettävä elektrodimittapää
BR8206471A (pt) Dispositivo de coleta e analise de amostras de gas com poeiras suspensas
EP0351659A3 (en) Method and arrangement for measuring the concentration of optically active substances
IT8548038A0 (it) Procedimento ed apparecchio per la rivelazione di rigurgiti in turbocompressori
DK83187D0 (da) Fremgangsmaade til bestemmelse af mikroorganismekoncentrationer samt skaale til anvendelse ved fremgangsmaaden
ATA133782A (de) Fluessigkeits- und/oder gasuntersuchungsvorrichtung
ES2021732B3 (es) Procedimiento y dispositivo de tratamiento de fluidos que contienen particulas en suspension.
MX7484E (es) Mejoras en aparato para la sustitucion de sondas de medicion y/o de muestreo
IT8224404A0 (it) Metodo ed apparecchio perl'ispezione olografica di oggetti in prova.
FI910324A7 (fi) Menetelmät ja testipakkaukset ihmisen leukosyyttiantigeeni-DNA:n havaitsemiseksi
ITUD920061A0 (it) Procedimento ed apparecchiature per l'analisi microbiologica di campioni biologici in soluzione
IT7950319A0 (it) Procedimento e composizione di colorazione e di analisi per la determinazione di batteri in fluidi
IT1243538B (it) Procedimento e dispositivo per la lavorazione di pellicole fotografiche sviluppate
IT1146968B (it) Procedimento ed apparecchio per l'analisi o la separazione di sostanze e miscele di sostanze
IT8067148A0 (it) Procedimento e dispositivo per la preconcentrazione di reagenti immunologici
EP0211645A3 (en) Apparatus and methods for use in the mass analysis of chemical samples

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961219