FR2626976B1 - Procede et dispositif pour l'analyse quantitative et differentielle en profondeur d'echantillons solides en mettant en oeuvre deux faisceaux d'ions - Google Patents

Procede et dispositif pour l'analyse quantitative et differentielle en profondeur d'echantillons solides en mettant en oeuvre deux faisceaux d'ions

Info

Publication number
FR2626976B1
FR2626976B1 FR888817317A FR8817317A FR2626976B1 FR 2626976 B1 FR2626976 B1 FR 2626976B1 FR 888817317 A FR888817317 A FR 888817317A FR 8817317 A FR8817317 A FR 8817317A FR 2626976 B1 FR2626976 B1 FR 2626976B1
Authority
FR
France
Prior art keywords
depth
quantitative analysis
ion beams
solid samples
samples
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR888817317A
Other languages
English (en)
Other versions
FR2626976A1 (fr
Inventor
Klaus Wittmaack
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STRAHLEN UMWELTFORSCHUNG GMBF
Original Assignee
STRAHLEN UMWELTFORSCHUNG GMBF
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STRAHLEN UMWELTFORSCHUNG GMBF filed Critical STRAHLEN UMWELTFORSCHUNG GMBF
Publication of FR2626976A1 publication Critical patent/FR2626976A1/fr
Application granted granted Critical
Publication of FR2626976B1 publication Critical patent/FR2626976B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
FR888817317A 1988-02-05 1988-12-28 Procede et dispositif pour l'analyse quantitative et differentielle en profondeur d'echantillons solides en mettant en oeuvre deux faisceaux d'ions Expired - Fee Related FR2626976B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3803424A DE3803424C2 (de) 1988-02-05 1988-02-05 Verfahren zur quantitativen, tiefendifferentiellen Analyse fester Proben

Publications (2)

Publication Number Publication Date
FR2626976A1 FR2626976A1 (fr) 1989-08-11
FR2626976B1 true FR2626976B1 (fr) 1993-04-30

Family

ID=6346682

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888817317A Expired - Fee Related FR2626976B1 (fr) 1988-02-05 1988-12-28 Procede et dispositif pour l'analyse quantitative et differentielle en profondeur d'echantillons solides en mettant en oeuvre deux faisceaux d'ions

Country Status (6)

Country Link
US (1) US4982090A (fr)
JP (1) JP2740231B2 (fr)
DE (1) DE3803424C2 (fr)
FR (1) FR2626976B1 (fr)
GB (1) GB2215909B (fr)
IT (1) IT1230178B (fr)

Families Citing this family (39)

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DE4028044A1 (de) * 1990-09-05 1992-03-12 Geesthacht Gkss Forschung Verfahren und vorrichtung zur analyse und bestimmung der konzentration von elementen in vorbestimmten tiefen von objekten
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
CA2290104A1 (fr) * 1997-05-12 1998-11-19 Silicon Genesis Corporation Procede de clivage controle
US6013563A (en) 1997-05-12 2000-01-11 Silicon Genesis Corporation Controlled cleaning process
US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6255662B1 (en) * 1998-10-27 2001-07-03 Axcelis Technologies, Inc. Rutherford backscattering detection for use in Ion implantation
AU6905000A (en) * 1999-08-10 2001-03-05 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6373070B1 (en) 1999-10-12 2002-04-16 Fei Company Method apparatus for a coaxial optical microscope with focused ion beam
FR2806527B1 (fr) * 2000-03-20 2002-10-25 Schlumberger Technologies Inc Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique
US6465776B1 (en) 2000-06-02 2002-10-15 Board Of Regents, The University Of Texas System Mass spectrometer apparatus for analyzing multiple fluid samples concurrently
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) * 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) * 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
FR2889887B1 (fr) * 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
JP5127148B2 (ja) * 2006-03-16 2013-01-23 株式会社日立ハイテクノロジーズ イオンビーム加工装置
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
FR2910179B1 (fr) * 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2925221B1 (fr) * 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
FR2947098A1 (fr) * 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3415985A (en) * 1962-11-28 1968-12-10 Centre Nat Rech Scient Ionic microanalyzer wherein secondary ions are emitted from a sample surface upon bombardment by neutral atoms
NL7306378A (fr) * 1973-05-08 1974-11-12
NL7317436A (nl) * 1973-12-20 1975-06-24 Philips Nv Inrichting voor massa-analyse en structuur-analyse van een oppervlaklaag door middel van ionenver- strooiing.
US3916190A (en) * 1974-03-01 1975-10-28 Minnesota Mining & Mfg Depth profile analysis apparatus
US4088895A (en) * 1977-07-08 1978-05-09 Martin Frederick Wight Memory device utilizing ion beam readout
DE3128814A1 (de) * 1981-07-21 1983-02-10 Siemens AG, 1000 Berlin und 8000 München Elektrisch leitende probenhalterung fuer die analysentechnik der sekundaerionen-massenspektrometrie
DE3475585D1 (en) * 1984-09-27 1989-01-12 Leybold Ag Apparatus for the sputtered neutral mass spectrometry
US4633084A (en) * 1985-01-16 1986-12-30 The United States Of America As Represented By The United States Department Of Energy High efficiency direct detection of ions from resonance ionization of sputtered atoms
IE58049B1 (en) * 1985-05-21 1993-06-16 Tekscan Ltd Surface analysis microscopy apparatus
JPH0739987B2 (ja) * 1988-06-28 1995-05-01 川崎製鉄株式会社 皮膜の厚みと組成の同時測定方法

Also Published As

Publication number Publication date
US4982090A (en) 1991-01-01
IT1230178B (it) 1991-10-18
JPH01217249A (ja) 1989-08-30
JP2740231B2 (ja) 1998-04-15
IT8823166A0 (it) 1988-12-30
DE3803424A1 (de) 1989-08-17
GB2215909A (en) 1989-09-27
DE3803424C2 (de) 1995-05-18
FR2626976A1 (fr) 1989-08-11
GB2215909B (en) 1992-09-16

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