IT8821598A0 - Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche - Google Patents

Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche

Info

Publication number
IT8821598A0
IT8821598A0 IT8821598A IT2159888A IT8821598A0 IT 8821598 A0 IT8821598 A0 IT 8821598A0 IT 8821598 A IT8821598 A IT 8821598A IT 2159888 A IT2159888 A IT 2159888A IT 8821598 A0 IT8821598 A0 IT 8821598A0
Authority
IT
Italy
Prior art keywords
circuit including
including means
power transistor
integrated power
transistor circuit
Prior art date
Application number
IT8821598A
Other languages
English (en)
Other versions
IT1226563B (it
Inventor
Flavio Villa
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8821598A priority Critical patent/IT1226563B/it
Publication of IT8821598A0 publication Critical patent/IT8821598A0/it
Priority to EP89112320A priority patent/EP0352516B1/en
Priority to DE68922535T priority patent/DE68922535T2/de
Priority to US07/381,340 priority patent/US5045910A/en
Priority to JP1197903A priority patent/JP2709961B2/ja
Application granted granted Critical
Publication of IT1226563B publication Critical patent/IT1226563B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08126—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transitor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
IT8821598A 1988-07-29 1988-07-29 Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche IT1226563B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8821598A IT1226563B (it) 1988-07-29 1988-07-29 Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche
EP89112320A EP0352516B1 (en) 1988-07-29 1989-07-06 Integrated power transistor comprising means for reducing thermal stresses
DE68922535T DE68922535T2 (de) 1988-07-29 1989-07-06 Integrierter Leistungstransistor mit Mitteln zur Verringerung thermischer Belastungen.
US07/381,340 US5045910A (en) 1988-07-29 1989-07-17 Integrated power transistor comprising means for reducing thermal stresses
JP1197903A JP2709961B2 (ja) 1988-07-29 1989-07-28 集積化パワートランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8821598A IT1226563B (it) 1988-07-29 1988-07-29 Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche

Publications (2)

Publication Number Publication Date
IT8821598A0 true IT8821598A0 (it) 1988-07-29
IT1226563B IT1226563B (it) 1991-01-24

Family

ID=11184148

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8821598A IT1226563B (it) 1988-07-29 1988-07-29 Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche

Country Status (5)

Country Link
US (1) US5045910A (it)
EP (1) EP0352516B1 (it)
JP (1) JP2709961B2 (it)
DE (1) DE68922535T2 (it)
IT (1) IT1226563B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936470A (en) * 1997-12-10 1999-08-10 Delco Electronics Corporation Audio amplifier having linear gain control
DE10031462A1 (de) 2000-06-28 2002-01-17 Eupec Gmbh & Co Kg Multichip-Anordnung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4085411A (en) * 1976-04-16 1978-04-18 Sprague Electric Company Light detector system with photo diode and current-mirror amplifier
US4160986A (en) * 1976-08-02 1979-07-10 Johnson David M Bipolar transistors having fixed gain characteristics
JPS56166612A (en) * 1980-05-26 1981-12-21 Pioneer Electronic Corp Level shifting circuit
US4481483A (en) * 1982-01-21 1984-11-06 Clarion Co., Ltd. Low distortion amplifier circuit
JPS5990412A (ja) * 1982-11-15 1984-05-24 Nec Corp 双方向性定電流駆動回路
IT1213171B (it) * 1984-05-21 1989-12-14 Ates Componenti Elettron Transistore bipolare di potenza.
IT1215230B (it) * 1985-01-08 1990-01-31 Ates Componenti Elettron Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
IT1214616B (it) * 1985-06-19 1990-01-18 Ates Componenti Elettron Circuito di commutazione, integrabile monoliticamente, ad elevato rendimento.
IT1198275B (it) * 1986-12-30 1988-12-21 Sgs Microelettronica Spa Transistore di potenza con miglioramento della resistenza alla rottura secondaria diretta

Also Published As

Publication number Publication date
EP0352516A3 (en) 1990-09-19
DE68922535T2 (de) 1996-01-25
JPH02104008A (ja) 1990-04-17
IT1226563B (it) 1991-01-24
US5045910A (en) 1991-09-03
EP0352516B1 (en) 1995-05-10
JP2709961B2 (ja) 1998-02-04
EP0352516A2 (en) 1990-01-31
DE68922535D1 (de) 1995-06-14

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970730