DE68922535D1 - Integrierter Leistungstransistor mit Mitteln zur Verringerung thermischer Belastungen. - Google Patents

Integrierter Leistungstransistor mit Mitteln zur Verringerung thermischer Belastungen.

Info

Publication number
DE68922535D1
DE68922535D1 DE68922535T DE68922535T DE68922535D1 DE 68922535 D1 DE68922535 D1 DE 68922535D1 DE 68922535 T DE68922535 T DE 68922535T DE 68922535 T DE68922535 T DE 68922535T DE 68922535 D1 DE68922535 D1 DE 68922535D1
Authority
DE
Germany
Prior art keywords
power transistor
integrated power
thermal loads
reducing thermal
reducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68922535T
Other languages
English (en)
Other versions
DE68922535T2 (de
Inventor
Flavio Villa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE68922535D1 publication Critical patent/DE68922535D1/de
Application granted granted Critical
Publication of DE68922535T2 publication Critical patent/DE68922535T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08126—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transitor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
DE68922535T 1988-07-29 1989-07-06 Integrierter Leistungstransistor mit Mitteln zur Verringerung thermischer Belastungen. Expired - Fee Related DE68922535T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8821598A IT1226563B (it) 1988-07-29 1988-07-29 Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche

Publications (2)

Publication Number Publication Date
DE68922535D1 true DE68922535D1 (de) 1995-06-14
DE68922535T2 DE68922535T2 (de) 1996-01-25

Family

ID=11184148

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922535T Expired - Fee Related DE68922535T2 (de) 1988-07-29 1989-07-06 Integrierter Leistungstransistor mit Mitteln zur Verringerung thermischer Belastungen.

Country Status (5)

Country Link
US (1) US5045910A (de)
EP (1) EP0352516B1 (de)
JP (1) JP2709961B2 (de)
DE (1) DE68922535T2 (de)
IT (1) IT1226563B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936470A (en) * 1997-12-10 1999-08-10 Delco Electronics Corporation Audio amplifier having linear gain control
DE10031462A1 (de) 2000-06-28 2002-01-17 Eupec Gmbh & Co Kg Multichip-Anordnung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4085411A (en) * 1976-04-16 1978-04-18 Sprague Electric Company Light detector system with photo diode and current-mirror amplifier
US4160986A (en) * 1976-08-02 1979-07-10 Johnson David M Bipolar transistors having fixed gain characteristics
JPS56166612A (en) * 1980-05-26 1981-12-21 Pioneer Electronic Corp Level shifting circuit
US4481483A (en) * 1982-01-21 1984-11-06 Clarion Co., Ltd. Low distortion amplifier circuit
JPS5990412A (ja) * 1982-11-15 1984-05-24 Nec Corp 双方向性定電流駆動回路
IT1213171B (it) * 1984-05-21 1989-12-14 Ates Componenti Elettron Transistore bipolare di potenza.
IT1215230B (it) * 1985-01-08 1990-01-31 Ates Componenti Elettron Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
IT1214616B (it) * 1985-06-19 1990-01-18 Ates Componenti Elettron Circuito di commutazione, integrabile monoliticamente, ad elevato rendimento.
IT1198275B (it) * 1986-12-30 1988-12-21 Sgs Microelettronica Spa Transistore di potenza con miglioramento della resistenza alla rottura secondaria diretta

Also Published As

Publication number Publication date
JP2709961B2 (ja) 1998-02-04
JPH02104008A (ja) 1990-04-17
EP0352516B1 (de) 1995-05-10
EP0352516A2 (de) 1990-01-31
IT8821598A0 (it) 1988-07-29
DE68922535T2 (de) 1996-01-25
EP0352516A3 (en) 1990-09-19
IT1226563B (it) 1991-01-24
US5045910A (en) 1991-09-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: STMICROELECTRONICS S.R.L., AGRATE BRIANZA, MAILAND

8339 Ceased/non-payment of the annual fee