IT8323430A0 - SILICON CARBIDE-BASED PRINTED ELEMENT FOR USE IN THE MANUFACTURE OF A SEMICONDUCTOR. - Google Patents

SILICON CARBIDE-BASED PRINTED ELEMENT FOR USE IN THE MANUFACTURE OF A SEMICONDUCTOR.

Info

Publication number
IT8323430A0
IT8323430A0 IT8323430A IT2343083A IT8323430A0 IT 8323430 A0 IT8323430 A0 IT 8323430A0 IT 8323430 A IT8323430 A IT 8323430A IT 2343083 A IT2343083 A IT 2343083A IT 8323430 A0 IT8323430 A0 IT 8323430A0
Authority
IT
Italy
Prior art keywords
semiconductor
manufacture
silicon carbide
printed element
based printed
Prior art date
Application number
IT8323430A
Other languages
Italian (it)
Other versions
IT1169895B (en
Inventor
Masayoshi Yamaguchi
Isao Sakashita
Toshiaki Suzuki
Takashi Tanaka
Original Assignee
Toshiba Ceramics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18980082A external-priority patent/JPS5978529A/en
Priority claimed from JP58090483A external-priority patent/JPS59217613A/en
Application filed by Toshiba Ceramics Co filed Critical Toshiba Ceramics Co
Publication of IT8323430A0 publication Critical patent/IT8323430A0/en
Application granted granted Critical
Publication of IT1169895B publication Critical patent/IT1169895B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Products (AREA)
IT23430/83A 1982-10-28 1983-10-25 PRINTED SILICON CARBIDE ELEMENT FOR USE IN THE MANUFACTURE OF A SEMICONDUCTOR IT1169895B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18980082A JPS5978529A (en) 1982-10-28 1982-10-28 Silicon carbide material for manufacturing semiconductor
JP58090483A JPS59217613A (en) 1983-05-23 1983-05-23 Silicon carbide material for producing semiconductor

Publications (2)

Publication Number Publication Date
IT8323430A0 true IT8323430A0 (en) 1983-10-25
IT1169895B IT1169895B (en) 1987-06-03

Family

ID=26431963

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23430/83A IT1169895B (en) 1982-10-28 1983-10-25 PRINTED SILICON CARBIDE ELEMENT FOR USE IN THE MANUFACTURE OF A SEMICONDUCTOR

Country Status (5)

Country Link
DE (1) DE3338755A1 (en)
FR (1) FR2535312B1 (en)
GB (1) GB2130192B (en)
IT (1) IT1169895B (en)
NL (1) NL8303684A (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138913A (en) * 1983-12-26 1985-07-23 Toshiba Ceramics Co Ltd Manufacture of semiconductor diffusion furnace tube
JPS6169116A (en) * 1984-09-13 1986-04-09 Toshiba Ceramics Co Ltd Susceptor for continuous cvd coating on silicon wafer
JPS6212666A (en) * 1985-07-09 1987-01-21 東芝セラミツクス株式会社 Manufacture of oven core pipe for semiconductor
JPH0521297Y2 (en) * 1986-07-31 1993-06-01
US4999228A (en) * 1988-05-06 1991-03-12 Shin-Etsu Chemical Co., Ltd. Silicon carbide diffusion tube for semi-conductor
US5332702A (en) * 1993-04-16 1994-07-26 Corning Incorporated Low sodium zircon refractory and fused silica process
US5770324A (en) * 1997-03-03 1998-06-23 Saint-Gobain Industrial Ceramics, Inc. Method of using a hot pressed silicon carbide dummy wafer
US6572700B2 (en) 1997-12-26 2003-06-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof
JP4135239B2 (en) * 1997-12-26 2008-08-20 住友電気工業株式会社 Semiconductor crystal, manufacturing method thereof and manufacturing apparatus
US6296716B1 (en) 1999-10-01 2001-10-02 Saint-Gobain Ceramics And Plastics, Inc. Process for cleaning ceramic articles
CN1284636C (en) * 2000-07-24 2006-11-15 圣戈本陶瓷及塑料股份有限公司 Process for cleaning ceramic articles
US20030233977A1 (en) * 2002-06-20 2003-12-25 Yeshwanth Narendar Method for forming semiconductor processing components
US7501370B2 (en) 2004-01-06 2009-03-10 Saint-Gobain Ceramics & Plastics, Inc. High purity silicon carbide wafer boats
TWI421965B (en) 2007-12-20 2014-01-01 Saint Gobain Ceramics Method for treating semiconductor processing components and components formed thereby

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1219625A (en) * 1958-04-03 1960-05-18 Wacker Chemie Gmbh Process for manufacturing objects of specific shape in very pure silicon carbide
JPS5722914B2 (en) * 1974-08-27 1982-05-15
US3951587A (en) * 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
JPS5222477A (en) * 1975-08-13 1977-02-19 Toshiba Ceramics Co Ltd Sic-si type equalizing tube for manufacturing gas impermeable semi conductors
JPS5277590A (en) * 1975-12-24 1977-06-30 Toshiba Corp Semiconductor producing device
JPS5848487B2 (en) * 1976-03-31 1983-10-28 東芝セラミツクス株式会社 Method for producing high purity silicon carbide powder
US4123286A (en) * 1976-12-27 1978-10-31 The Carborundum Company Silicon carbide powder compositions
JPS55158622A (en) * 1979-05-30 1980-12-10 Toshiba Ceramics Co Ltd Manufacture of silicon carbide material for semiconductor

Also Published As

Publication number Publication date
IT1169895B (en) 1987-06-03
GB8328426D0 (en) 1983-11-23
GB2130192A (en) 1984-05-31
NL8303684A (en) 1984-05-16
GB2130192B (en) 1987-01-07
FR2535312A1 (en) 1984-05-04
FR2535312B1 (en) 1986-11-14
DE3338755A1 (en) 1984-05-03

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030