IT8319897A0 - Procedimento per la fabbricazione di un laser ad iniezione in particolare di un laser con guida d'onda a strato invertito. - Google Patents
Procedimento per la fabbricazione di un laser ad iniezione in particolare di un laser con guida d'onda a strato invertito.Info
- Publication number
- IT8319897A0 IT8319897A0 IT8319897A IT1989783A IT8319897A0 IT 8319897 A0 IT8319897 A0 IT 8319897A0 IT 8319897 A IT8319897 A IT 8319897A IT 1989783 A IT1989783 A IT 1989783A IT 8319897 A0 IT8319897 A0 IT 8319897A0
- Authority
- IT
- Italy
- Prior art keywords
- laser
- procedure
- manufacture
- wave guide
- inverted layer
- Prior art date
Links
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08206375A GB2115975B (en) | 1982-03-04 | 1982-03-04 | Injection laser manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8319897A0 true IT8319897A0 (it) | 1983-03-04 |
| IT1237337B IT1237337B (it) | 1993-05-31 |
Family
ID=10528783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT8319897A IT1237337B (it) | 1982-03-04 | 1983-03-04 | Procedimento per la fabbricazione di un laser ad iniezione in particolare di un laser con guida d'onda a strato invertito |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0107671A1 (it) |
| JP (1) | JPS58197790A (it) |
| AU (1) | AU1194383A (it) |
| DE (1) | DE3306643A1 (it) |
| GB (1) | GB2115975B (it) |
| IT (1) | IT1237337B (it) |
| NZ (1) | NZ203381A (it) |
| WO (1) | WO1983003172A1 (it) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3406361A1 (de) * | 1984-02-22 | 1985-08-29 | Telefunken electronic GmbH, 7100 Heilbronn | Doppel-heterostruktur-laser und verfahren zu seiner herstellung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4280106A (en) * | 1979-05-15 | 1981-07-21 | Xerox Corporation | Striped substrate planar laser |
| JPS5640292A (en) * | 1979-09-11 | 1981-04-16 | Fujitsu Ltd | Semiconductor laser |
-
1982
- 1982-03-04 GB GB08206375A patent/GB2115975B/en not_active Expired
-
1983
- 1983-02-24 NZ NZ203381A patent/NZ203381A/en unknown
- 1983-02-25 DE DE19833306643 patent/DE3306643A1/de not_active Withdrawn
- 1983-03-01 AU AU11943/83A patent/AU1194383A/en not_active Abandoned
- 1983-03-02 EP EP83901086A patent/EP0107671A1/en not_active Ceased
- 1983-03-02 WO PCT/GB1983/000061 patent/WO1983003172A1/en not_active Application Discontinuation
- 1983-03-03 JP JP58035214A patent/JPS58197790A/ja active Pending
- 1983-03-04 IT IT8319897A patent/IT1237337B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| GB2115975B (en) | 1985-07-03 |
| JPS58197790A (ja) | 1983-11-17 |
| EP0107671A1 (en) | 1984-05-09 |
| IT1237337B (it) | 1993-05-31 |
| NZ203381A (en) | 1985-12-13 |
| GB2115975A (en) | 1983-09-14 |
| DE3306643A1 (de) | 1983-09-08 |
| WO1983003172A1 (en) | 1983-09-15 |
| AU1194383A (en) | 1987-09-03 |
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