AU1194383A - Injection laser manufacture - Google Patents

Injection laser manufacture

Info

Publication number
AU1194383A
AU1194383A AU11943/83A AU1194383A AU1194383A AU 1194383 A AU1194383 A AU 1194383A AU 11943/83 A AU11943/83 A AU 11943/83A AU 1194383 A AU1194383 A AU 1194383A AU 1194383 A AU1194383 A AU 1194383A
Authority
AU
Australia
Prior art keywords
injection laser
laser manufacture
manufacture
injection
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU11943/83A
Inventor
Stephen Ernest Henry Turley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of AU1194383A publication Critical patent/AU1194383A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AU11943/83A 1982-03-04 1983-03-01 Injection laser manufacture Abandoned AU1194383A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB08206375A GB2115975B (en) 1982-03-04 1982-03-04 Injection laser manufacture
GB8206375 1982-03-04

Publications (1)

Publication Number Publication Date
AU1194383A true AU1194383A (en) 1987-09-03

Family

ID=10528783

Family Applications (1)

Application Number Title Priority Date Filing Date
AU11943/83A Abandoned AU1194383A (en) 1982-03-04 1983-03-01 Injection laser manufacture

Country Status (8)

Country Link
EP (1) EP0107671A1 (en)
JP (1) JPS58197790A (en)
AU (1) AU1194383A (en)
DE (1) DE3306643A1 (en)
GB (1) GB2115975B (en)
IT (1) IT1237337B (en)
NZ (1) NZ203381A (en)
WO (1) WO1983003172A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3406361A1 (en) * 1984-02-22 1985-08-29 Telefunken electronic GmbH, 7100 Heilbronn Twin-heterostructure laser and method for the production thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4280106A (en) * 1979-05-15 1981-07-21 Xerox Corporation Striped substrate planar laser
JPS5640292A (en) * 1979-09-11 1981-04-16 Fujitsu Ltd Semiconductor laser

Also Published As

Publication number Publication date
GB2115975B (en) 1985-07-03
NZ203381A (en) 1985-12-13
EP0107671A1 (en) 1984-05-09
GB2115975A (en) 1983-09-14
JPS58197790A (en) 1983-11-17
WO1983003172A1 (en) 1983-09-15
IT8319897A0 (en) 1983-03-04
IT1237337B (en) 1993-05-31
DE3306643A1 (en) 1983-09-08

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