IT8026063A0 - INPUT PROTECTION FOR MOS-TYPE INTEGRATED CIRCUIT, WITH LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY. - Google Patents
INPUT PROTECTION FOR MOS-TYPE INTEGRATED CIRCUIT, WITH LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY.Info
- Publication number
- IT8026063A0 IT8026063A0 IT8026063A IT2606380A IT8026063A0 IT 8026063 A0 IT8026063 A0 IT 8026063A0 IT 8026063 A IT8026063 A IT 8026063A IT 2606380 A IT2606380 A IT 2606380A IT 8026063 A0 IT8026063 A0 IT 8026063A0
- Authority
- IT
- Italy
- Prior art keywords
- mos
- integrated circuit
- supply voltage
- high integration
- integration density
- Prior art date
Links
- 230000010354 integration Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT26063/80A IT1150062B (en) | 1980-11-19 | 1980-11-19 | INPUT PROTECTION FOR MOS TYPE INTEGRATED CIRCUIT, LOW POWER SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY |
NLAANVRAGE8105192,A NL189789C (en) | 1980-11-19 | 1981-11-16 | INTEGRATED MOS CIRCUIT WITH PROTECTION AGAINST EXCESSIVE INPUT VOLTAGES. |
GB8134626A GB2090701B (en) | 1980-11-19 | 1981-11-17 | Improvements in or relating to input protection for mos integrated circuits |
DE19813145592 DE3145592A1 (en) | 1980-11-19 | 1981-11-17 | "INPUT-SIDED PROTECTION FOR INTEGRATED MOS CIRCUITS WITH LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY" |
JP56183933A JPS57112076A (en) | 1980-11-19 | 1981-11-18 | Mos integrated circuit |
FR8121665A FR2494501B1 (en) | 1980-11-19 | 1981-11-19 | INPUT PROTECTION FOR INTEGRATED MOS CIRCUIT AT LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT26063/80A IT1150062B (en) | 1980-11-19 | 1980-11-19 | INPUT PROTECTION FOR MOS TYPE INTEGRATED CIRCUIT, LOW POWER SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8026063A0 true IT8026063A0 (en) | 1980-11-19 |
IT1150062B IT1150062B (en) | 1986-12-10 |
Family
ID=11218547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT26063/80A IT1150062B (en) | 1980-11-19 | 1980-11-19 | INPUT PROTECTION FOR MOS TYPE INTEGRATED CIRCUIT, LOW POWER SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS57112076A (en) |
DE (1) | DE3145592A1 (en) |
FR (1) | FR2494501B1 (en) |
GB (1) | GB2090701B (en) |
IT (1) | IT1150062B (en) |
NL (1) | NL189789C (en) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4484244A (en) * | 1982-09-22 | 1984-11-20 | Rca Corporation | Protection circuit for integrated circuit devices |
JPS5992557A (en) * | 1982-11-18 | 1984-05-28 | Nec Corp | Semiconductor integrated circuit with input protection circuit |
JPS60128653A (en) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | Semiconductor integrated circuit device |
DE3408285A1 (en) * | 1984-03-07 | 1985-09-19 | Telefunken electronic GmbH, 7100 Heilbronn | PROTECTIVE ARRANGEMENT FOR A FIELD EFFECT TRANSISTOR |
EP0157389B1 (en) * | 1984-03-31 | 1991-06-26 | Kabushiki Kaisha Toshiba | Protection device for a mos transistor |
JPS60207383A (en) * | 1984-03-31 | 1985-10-18 | Toshiba Corp | Semiconductor device |
JPS6153761A (en) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | Semiconductor device |
FR2575333B1 (en) * | 1984-12-21 | 1987-01-23 | Radiotechnique Compelec | DEVICE FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES |
IT1217298B (en) * | 1985-05-30 | 1990-03-22 | Sgs Thomson Microelectronics | ELECTROSTATIC DISCHARGE PROTECTION DEVICE, IN PARTICULAR FOR BIPOLAR INTEGRATED CIRCUITS |
IT1186227B (en) * | 1985-12-03 | 1987-11-18 | Sgs Microelettronica Spa | INPUT OVERVOLTAGE PROTECTION DEVICE FOR A MOS TYPE INTEGRATED CIRCUIT |
DE3615049C2 (en) * | 1986-05-03 | 1994-04-07 | Bosch Gmbh Robert | Integrated resistor arrangement with protective element against reverse polarity and overvoltage or undervoltage |
US5077591A (en) * | 1986-09-30 | 1991-12-31 | Texas Instruments Incorporated | Electrostatic discharge protection for semiconductor input devices |
US4739437A (en) * | 1986-10-22 | 1988-04-19 | Siemens-Pacesetter, Inc. | Pacemaker output switch protection |
JPS63198525A (en) * | 1987-02-12 | 1988-08-17 | 三菱電機株式会社 | Overvoltage protector |
US4875130A (en) * | 1988-07-06 | 1989-10-17 | National Semiconductor Corporation | ESD low resistance input structure |
US5189588A (en) * | 1989-03-15 | 1993-02-23 | Matsushita Electric Industrial Co., Ltd. | Surge protection apparatus |
US5212618A (en) * | 1990-05-03 | 1993-05-18 | Linear Technology Corporation | Electrostatic discharge clamp using vertical NPN transistor |
US5139959A (en) * | 1992-01-21 | 1992-08-18 | Motorola, Inc. | Method for forming bipolar transistor input protection |
US5591661A (en) * | 1992-04-07 | 1997-01-07 | Shiota; Philip | Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures |
US5272097A (en) * | 1992-04-07 | 1993-12-21 | Philip Shiota | Method for fabricating diodes for electrostatic discharge protection and voltage references |
US5428498A (en) * | 1992-09-28 | 1995-06-27 | Xerox Corporation | Office environment level electrostatic discharge protection |
FR2716294B1 (en) | 1994-01-28 | 1996-05-31 | Sgs Thomson Microelectronics | Method for producing a bipolar transistor for protecting an integrated circuit against electrostatic discharges. |
US5545910A (en) * | 1994-04-13 | 1996-08-13 | Winbond Electronics Corp. | ESD proctection device |
EP0688054A3 (en) * | 1994-06-13 | 1996-06-05 | Symbios Logic Inc | Electrostatic discharge protection for integrated circuit semiconductor device |
EP0851552A1 (en) * | 1996-12-31 | 1998-07-01 | STMicroelectronics S.r.l. | Protection ciruit for an electric supply line in a semiconductor integrated device |
DE102009015839B4 (en) * | 2009-04-01 | 2019-07-11 | Austriamicrosystems Ag | Integrated ESD protection circuit |
JP2013172085A (en) * | 2012-02-22 | 2013-09-02 | Asahi Kasei Electronics Co Ltd | Method of manufacturing semiconductor device and semiconductor device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1179388A (en) * | 1967-11-02 | 1970-01-28 | Ncr Co | Electrical Protective Circuit for Metal-Oxide-Semiconductor Transistors |
US3739238A (en) * | 1969-09-24 | 1973-06-12 | Tokyo Shibaura Electric Co | Semiconductor device with a field effect transistor |
JPS5410836B1 (en) * | 1970-06-26 | 1979-05-10 | ||
JPS526470B1 (en) * | 1971-04-20 | 1977-02-22 | ||
NL176322C (en) * | 1976-02-24 | 1985-03-18 | Philips Nv | SEMICONDUCTOR DEVICE WITH SAFETY CIRCUIT. |
-
1980
- 1980-11-19 IT IT26063/80A patent/IT1150062B/en active
-
1981
- 1981-11-16 NL NLAANVRAGE8105192,A patent/NL189789C/en not_active IP Right Cessation
- 1981-11-17 GB GB8134626A patent/GB2090701B/en not_active Expired
- 1981-11-17 DE DE19813145592 patent/DE3145592A1/en active Granted
- 1981-11-18 JP JP56183933A patent/JPS57112076A/en active Pending
- 1981-11-19 FR FR8121665A patent/FR2494501B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2090701A (en) | 1982-07-14 |
FR2494501A1 (en) | 1982-05-21 |
DE3145592A1 (en) | 1982-07-15 |
NL189789B (en) | 1993-02-16 |
DE3145592C2 (en) | 1993-04-29 |
NL189789C (en) | 1993-07-16 |
JPS57112076A (en) | 1982-07-12 |
NL8105192A (en) | 1982-06-16 |
IT1150062B (en) | 1986-12-10 |
GB2090701B (en) | 1984-09-26 |
FR2494501B1 (en) | 1985-10-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971129 |