IT8026063A0 - INPUT PROTECTION FOR MOS-TYPE INTEGRATED CIRCUIT, WITH LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY. - Google Patents

INPUT PROTECTION FOR MOS-TYPE INTEGRATED CIRCUIT, WITH LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY.

Info

Publication number
IT8026063A0
IT8026063A0 IT8026063A IT2606380A IT8026063A0 IT 8026063 A0 IT8026063 A0 IT 8026063A0 IT 8026063 A IT8026063 A IT 8026063A IT 2606380 A IT2606380 A IT 2606380A IT 8026063 A0 IT8026063 A0 IT 8026063A0
Authority
IT
Italy
Prior art keywords
mos
integrated circuit
supply voltage
high integration
integration density
Prior art date
Application number
IT8026063A
Other languages
Italian (it)
Other versions
IT1150062B (en
Inventor
Livio Baldi
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT26063/80A priority Critical patent/IT1150062B/en
Publication of IT8026063A0 publication Critical patent/IT8026063A0/en
Priority to NLAANVRAGE8105192,A priority patent/NL189789C/en
Priority to GB8134626A priority patent/GB2090701B/en
Priority to DE19813145592 priority patent/DE3145592A1/en
Priority to JP56183933A priority patent/JPS57112076A/en
Priority to FR8121665A priority patent/FR2494501B1/en
Application granted granted Critical
Publication of IT1150062B publication Critical patent/IT1150062B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
IT26063/80A 1980-11-19 1980-11-19 INPUT PROTECTION FOR MOS TYPE INTEGRATED CIRCUIT, LOW POWER SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY IT1150062B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT26063/80A IT1150062B (en) 1980-11-19 1980-11-19 INPUT PROTECTION FOR MOS TYPE INTEGRATED CIRCUIT, LOW POWER SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY
NLAANVRAGE8105192,A NL189789C (en) 1980-11-19 1981-11-16 INTEGRATED MOS CIRCUIT WITH PROTECTION AGAINST EXCESSIVE INPUT VOLTAGES.
GB8134626A GB2090701B (en) 1980-11-19 1981-11-17 Improvements in or relating to input protection for mos integrated circuits
DE19813145592 DE3145592A1 (en) 1980-11-19 1981-11-17 "INPUT-SIDED PROTECTION FOR INTEGRATED MOS CIRCUITS WITH LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY"
JP56183933A JPS57112076A (en) 1980-11-19 1981-11-18 Mos integrated circuit
FR8121665A FR2494501B1 (en) 1980-11-19 1981-11-19 INPUT PROTECTION FOR INTEGRATED MOS CIRCUIT AT LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT26063/80A IT1150062B (en) 1980-11-19 1980-11-19 INPUT PROTECTION FOR MOS TYPE INTEGRATED CIRCUIT, LOW POWER SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY

Publications (2)

Publication Number Publication Date
IT8026063A0 true IT8026063A0 (en) 1980-11-19
IT1150062B IT1150062B (en) 1986-12-10

Family

ID=11218547

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26063/80A IT1150062B (en) 1980-11-19 1980-11-19 INPUT PROTECTION FOR MOS TYPE INTEGRATED CIRCUIT, LOW POWER SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY

Country Status (6)

Country Link
JP (1) JPS57112076A (en)
DE (1) DE3145592A1 (en)
FR (1) FR2494501B1 (en)
GB (1) GB2090701B (en)
IT (1) IT1150062B (en)
NL (1) NL189789C (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
JPS5992557A (en) * 1982-11-18 1984-05-28 Nec Corp Semiconductor integrated circuit with input protection circuit
JPS60128653A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Semiconductor integrated circuit device
DE3408285A1 (en) * 1984-03-07 1985-09-19 Telefunken electronic GmbH, 7100 Heilbronn PROTECTIVE ARRANGEMENT FOR A FIELD EFFECT TRANSISTOR
EP0157389B1 (en) * 1984-03-31 1991-06-26 Kabushiki Kaisha Toshiba Protection device for a mos transistor
JPS60207383A (en) * 1984-03-31 1985-10-18 Toshiba Corp Semiconductor device
JPS6153761A (en) * 1984-08-24 1986-03-17 Hitachi Ltd Semiconductor device
FR2575333B1 (en) * 1984-12-21 1987-01-23 Radiotechnique Compelec DEVICE FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES
IT1217298B (en) * 1985-05-30 1990-03-22 Sgs Thomson Microelectronics ELECTROSTATIC DISCHARGE PROTECTION DEVICE, IN PARTICULAR FOR BIPOLAR INTEGRATED CIRCUITS
IT1186227B (en) * 1985-12-03 1987-11-18 Sgs Microelettronica Spa INPUT OVERVOLTAGE PROTECTION DEVICE FOR A MOS TYPE INTEGRATED CIRCUIT
DE3615049C2 (en) * 1986-05-03 1994-04-07 Bosch Gmbh Robert Integrated resistor arrangement with protective element against reverse polarity and overvoltage or undervoltage
US5077591A (en) * 1986-09-30 1991-12-31 Texas Instruments Incorporated Electrostatic discharge protection for semiconductor input devices
US4739437A (en) * 1986-10-22 1988-04-19 Siemens-Pacesetter, Inc. Pacemaker output switch protection
JPS63198525A (en) * 1987-02-12 1988-08-17 三菱電機株式会社 Overvoltage protector
US4875130A (en) * 1988-07-06 1989-10-17 National Semiconductor Corporation ESD low resistance input structure
US5189588A (en) * 1989-03-15 1993-02-23 Matsushita Electric Industrial Co., Ltd. Surge protection apparatus
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
US5139959A (en) * 1992-01-21 1992-08-18 Motorola, Inc. Method for forming bipolar transistor input protection
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
US5272097A (en) * 1992-04-07 1993-12-21 Philip Shiota Method for fabricating diodes for electrostatic discharge protection and voltage references
US5428498A (en) * 1992-09-28 1995-06-27 Xerox Corporation Office environment level electrostatic discharge protection
FR2716294B1 (en) 1994-01-28 1996-05-31 Sgs Thomson Microelectronics Method for producing a bipolar transistor for protecting an integrated circuit against electrostatic discharges.
US5545910A (en) * 1994-04-13 1996-08-13 Winbond Electronics Corp. ESD proctection device
EP0688054A3 (en) * 1994-06-13 1996-06-05 Symbios Logic Inc Electrostatic discharge protection for integrated circuit semiconductor device
EP0851552A1 (en) * 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Protection ciruit for an electric supply line in a semiconductor integrated device
DE102009015839B4 (en) * 2009-04-01 2019-07-11 Austriamicrosystems Ag Integrated ESD protection circuit
JP2013172085A (en) * 2012-02-22 2013-09-02 Asahi Kasei Electronics Co Ltd Method of manufacturing semiconductor device and semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1179388A (en) * 1967-11-02 1970-01-28 Ncr Co Electrical Protective Circuit for Metal-Oxide-Semiconductor Transistors
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
JPS5410836B1 (en) * 1970-06-26 1979-05-10
JPS526470B1 (en) * 1971-04-20 1977-02-22
NL176322C (en) * 1976-02-24 1985-03-18 Philips Nv SEMICONDUCTOR DEVICE WITH SAFETY CIRCUIT.

Also Published As

Publication number Publication date
GB2090701A (en) 1982-07-14
FR2494501A1 (en) 1982-05-21
DE3145592A1 (en) 1982-07-15
NL189789B (en) 1993-02-16
DE3145592C2 (en) 1993-04-29
NL189789C (en) 1993-07-16
JPS57112076A (en) 1982-07-12
NL8105192A (en) 1982-06-16
IT1150062B (en) 1986-12-10
GB2090701B (en) 1984-09-26
FR2494501B1 (en) 1985-10-25

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971129