FR2494501B1 - INPUT PROTECTION FOR INTEGRATED MOS CIRCUIT AT LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY - Google Patents

INPUT PROTECTION FOR INTEGRATED MOS CIRCUIT AT LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY

Info

Publication number
FR2494501B1
FR2494501B1 FR8121665A FR8121665A FR2494501B1 FR 2494501 B1 FR2494501 B1 FR 2494501B1 FR 8121665 A FR8121665 A FR 8121665A FR 8121665 A FR8121665 A FR 8121665A FR 2494501 B1 FR2494501 B1 FR 2494501B1
Authority
FR
France
Prior art keywords
supply voltage
high integration
integration density
input protection
low supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8121665A
Other languages
French (fr)
Other versions
FR2494501A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of FR2494501A1 publication Critical patent/FR2494501A1/en
Application granted granted Critical
Publication of FR2494501B1 publication Critical patent/FR2494501B1/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
FR8121665A 1980-11-19 1981-11-19 INPUT PROTECTION FOR INTEGRATED MOS CIRCUIT AT LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY Expired FR2494501B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT26063/80A IT1150062B (en) 1980-11-19 1980-11-19 INPUT PROTECTION FOR MOS TYPE INTEGRATED CIRCUIT, LOW POWER SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY

Publications (2)

Publication Number Publication Date
FR2494501A1 FR2494501A1 (en) 1982-05-21
FR2494501B1 true FR2494501B1 (en) 1985-10-25

Family

ID=11218547

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8121665A Expired FR2494501B1 (en) 1980-11-19 1981-11-19 INPUT PROTECTION FOR INTEGRATED MOS CIRCUIT AT LOW SUPPLY VOLTAGE AND HIGH INTEGRATION DENSITY

Country Status (6)

Country Link
JP (1) JPS57112076A (en)
DE (1) DE3145592A1 (en)
FR (1) FR2494501B1 (en)
GB (1) GB2090701B (en)
IT (1) IT1150062B (en)
NL (1) NL189789C (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
JPS5992557A (en) * 1982-11-18 1984-05-28 Nec Corp Semiconductor integrated circuit with input protection circuit
JPS60128653A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Semiconductor integrated circuit device
DE3408285A1 (en) * 1984-03-07 1985-09-19 Telefunken electronic GmbH, 7100 Heilbronn PROTECTIVE ARRANGEMENT FOR A FIELD EFFECT TRANSISTOR
DE3583301D1 (en) * 1984-03-31 1991-08-01 Toshiba Kawasaki Kk PROTECTIVE ARRANGEMENT FOR A MOS TRANSISTOR.
JPS60207383A (en) * 1984-03-31 1985-10-18 Toshiba Corp Semiconductor device
JPS6153761A (en) * 1984-08-24 1986-03-17 Hitachi Ltd Semiconductor device
FR2575333B1 (en) * 1984-12-21 1987-01-23 Radiotechnique Compelec DEVICE FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST ELECTROSTATIC DISCHARGES
IT1217298B (en) * 1985-05-30 1990-03-22 Sgs Thomson Microelectronics ELECTROSTATIC DISCHARGE PROTECTION DEVICE, IN PARTICULAR FOR BIPOLAR INTEGRATED CIRCUITS
IT1186227B (en) * 1985-12-03 1987-11-18 Sgs Microelettronica Spa INPUT OVERVOLTAGE PROTECTION DEVICE FOR A MOS TYPE INTEGRATED CIRCUIT
DE3615049C2 (en) * 1986-05-03 1994-04-07 Bosch Gmbh Robert Integrated resistor arrangement with protective element against reverse polarity and overvoltage or undervoltage
US5077591A (en) * 1986-09-30 1991-12-31 Texas Instruments Incorporated Electrostatic discharge protection for semiconductor input devices
US4739437A (en) * 1986-10-22 1988-04-19 Siemens-Pacesetter, Inc. Pacemaker output switch protection
JPS63198525A (en) * 1987-02-12 1988-08-17 三菱電機株式会社 Overvoltage protector
US4875130A (en) * 1988-07-06 1989-10-17 National Semiconductor Corporation ESD low resistance input structure
US5189588A (en) * 1989-03-15 1993-02-23 Matsushita Electric Industrial Co., Ltd. Surge protection apparatus
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
US5139959A (en) * 1992-01-21 1992-08-18 Motorola, Inc. Method for forming bipolar transistor input protection
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
US5272097A (en) * 1992-04-07 1993-12-21 Philip Shiota Method for fabricating diodes for electrostatic discharge protection and voltage references
US5428498A (en) * 1992-09-28 1995-06-27 Xerox Corporation Office environment level electrostatic discharge protection
FR2716294B1 (en) * 1994-01-28 1996-05-31 Sgs Thomson Microelectronics Method for producing a bipolar transistor for protecting an integrated circuit against electrostatic discharges.
US5545910A (en) * 1994-04-13 1996-08-13 Winbond Electronics Corp. ESD proctection device
EP0688054A3 (en) * 1994-06-13 1996-06-05 Symbios Logic Inc Electrostatic discharge protection for integrated circuit semiconductor device
EP0851552A1 (en) * 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Protection ciruit for an electric supply line in a semiconductor integrated device
DE102009015839B4 (en) * 2009-04-01 2019-07-11 Austriamicrosystems Ag Integrated ESD protection circuit
JP2013172085A (en) * 2012-02-22 2013-09-02 Asahi Kasei Electronics Co Ltd Method of manufacturing semiconductor device and semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1179388A (en) * 1967-11-02 1970-01-28 Ncr Co Electrical Protective Circuit for Metal-Oxide-Semiconductor Transistors
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
JPS5410836B1 (en) * 1970-06-26 1979-05-10
JPS526470B1 (en) * 1971-04-20 1977-02-22
NL176322C (en) * 1976-02-24 1985-03-18 Philips Nv SEMICONDUCTOR DEVICE WITH SAFETY CIRCUIT.

Also Published As

Publication number Publication date
NL189789B (en) 1993-02-16
NL189789C (en) 1993-07-16
IT1150062B (en) 1986-12-10
DE3145592A1 (en) 1982-07-15
DE3145592C2 (en) 1993-04-29
IT8026063A0 (en) 1980-11-19
JPS57112076A (en) 1982-07-12
GB2090701A (en) 1982-07-14
GB2090701B (en) 1984-09-26
FR2494501A1 (en) 1982-05-21
NL8105192A (en) 1982-06-16

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