IT7928130A0 - Soluzione di attacco particolarmente per biossido di silicio. - Google Patents
Soluzione di attacco particolarmente per biossido di silicio.Info
- Publication number
- IT7928130A0 IT7928130A0 IT7928130A IT2813079A IT7928130A0 IT 7928130 A0 IT7928130 A0 IT 7928130A0 IT 7928130 A IT7928130 A IT 7928130A IT 2813079 A IT2813079 A IT 2813079A IT 7928130 A0 IT7928130 A0 IT 7928130A0
- Authority
- IT
- Italy
- Prior art keywords
- silicon dioxide
- solution especially
- attacking solution
- attacking
- dioxide
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/974,573 US4230523A (en) | 1978-12-29 | 1978-12-29 | Etchant for silicon dioxide films disposed atop silicon or metallic silicides |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT7928130A0 true IT7928130A0 (it) | 1979-12-18 |
| IT1162600B IT1162600B (it) | 1987-04-01 |
Family
ID=25522197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT28130/79A IT1162600B (it) | 1978-12-29 | 1979-12-18 | Soluzione di attacco particolarmente per biossido di silicio |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4230523A (it) |
| EP (1) | EP0012955B1 (it) |
| JP (1) | JPS5591131A (it) |
| CA (1) | CA1126877A (it) |
| DE (1) | DE2967464D1 (it) |
| IT (1) | IT1162600B (it) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4569722A (en) * | 1984-11-23 | 1986-02-11 | At&T Bell Laboratories | Ethylene glycol etch for processes using metal silicides |
| US5320709A (en) * | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
| US5571447A (en) * | 1995-03-20 | 1996-11-05 | Ashland Inc. | Stripping and cleaning composition |
| WO1997002958A1 (en) * | 1995-07-10 | 1997-01-30 | Advanced Chemical Systems International | Organic amine/hydrogen fluoride etchant composition and method |
| US6130482A (en) * | 1995-09-26 | 2000-10-10 | Fujitsu Limited | Semiconductor device and method for fabricating the same |
| US5709756A (en) * | 1996-11-05 | 1998-01-20 | Ashland Inc. | Basic stripping and cleaning composition |
| US5698503A (en) * | 1996-11-08 | 1997-12-16 | Ashland Inc. | Stripping and cleaning composition |
| TW434196B (en) | 1997-06-25 | 2001-05-16 | Ibm | Selective etching of silicate |
| US5965465A (en) * | 1997-09-18 | 1999-10-12 | International Business Machines Corporation | Etching of silicon nitride |
| US6150282A (en) * | 1997-11-13 | 2000-11-21 | International Business Machines Corporation | Selective removal of etching residues |
| US6033996A (en) * | 1997-11-13 | 2000-03-07 | International Business Machines Corporation | Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide |
| US6280651B1 (en) | 1998-12-16 | 2001-08-28 | Advanced Technology Materials, Inc. | Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent |
| WO1999046811A1 (de) * | 1998-03-10 | 1999-09-16 | Scacco Electronics Consulting | Selektives ätzen von siliciumnitrid mit einem nasschemischen ver fahren |
| US6117351A (en) | 1998-04-06 | 2000-09-12 | Micron Technology, Inc. | Method for etching dielectric films |
| US6117796A (en) * | 1998-08-13 | 2000-09-12 | International Business Machines Corporation | Removal of silicon oxide |
| US6200891B1 (en) | 1998-08-13 | 2001-03-13 | International Business Machines Corporation | Removal of dielectric oxides |
| DE19914243A1 (de) * | 1999-03-29 | 2000-10-05 | Riedel De Haen Gmbh | Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff |
| US8153095B2 (en) * | 1999-03-29 | 2012-04-10 | Honeywell International Inc. | Method for producing highly pure solutions using gaseous hydrogen fluoride |
| US6531071B1 (en) | 2000-01-04 | 2003-03-11 | Micron Technology, Inc. | Passivation for cleaning a material |
| EP1138726B1 (en) | 2000-03-27 | 2005-01-12 | Shipley Company LLC | Polymer remover |
| US6475893B2 (en) * | 2001-03-30 | 2002-11-05 | International Business Machines Corporation | Method for improved fabrication of salicide structures |
| US8119537B2 (en) * | 2004-09-02 | 2012-02-21 | Micron Technology, Inc. | Selective etching of oxides to metal nitrides and metal oxides |
| EP1701218A3 (en) * | 2005-03-11 | 2008-10-15 | Rohm and Haas Electronic Materials LLC | Polymer remover |
| TWI339780B (en) * | 2005-07-28 | 2011-04-01 | Rohm & Haas Elect Mat | Stripper |
| US20070099806A1 (en) * | 2005-10-28 | 2007-05-03 | Stewart Michael P | Composition and method for selectively removing native oxide from silicon-containing surfaces |
| FR2914925B1 (fr) * | 2007-04-13 | 2009-06-05 | Altis Semiconductor Snc | Solution utilisee dans la fabrication d'un materiau semi-conducteur poreux et procede de fabrication dudit materiau |
| EP2528089B1 (en) * | 2011-05-23 | 2014-03-05 | Alchimer | Method for forming a vertical electrical connection in a layered semiconductor structure |
| JP6882466B2 (ja) | 2016-10-24 | 2021-06-02 | サン−ゴバン パフォーマンス プラスティックス コーポレイション | ポリマー組成物、材料および製造方法 |
| US10886249B2 (en) | 2018-01-31 | 2021-01-05 | Ams International Ag | Hybrid wafer-to-wafer bonding and methods of surface preparation for wafers comprising an aluminum metalization |
| US11355690B2 (en) | 2019-03-08 | 2022-06-07 | Brookhaven Science Associates, Llc | Superconducting qubit devices based on metal silicides |
| CN110828310A (zh) * | 2019-10-29 | 2020-02-21 | 福建福顺微电子有限公司 | 一种发射区二氧化硅腐蚀台阶制作方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2399134A (en) * | 1943-02-24 | 1946-04-23 | Aluminum Co Of America | Method of removing oxide coating from aluminum surfaces |
| US3448055A (en) * | 1965-03-31 | 1969-06-03 | Diversey Corp | Aluminum alloy deoxidizing-desmutting composition and method |
| GB1228083A (it) * | 1968-06-10 | 1971-04-15 | ||
| US3650969A (en) * | 1968-07-29 | 1972-03-21 | Allied Chem | Compositions for removal of finish coatings |
| US3979241A (en) * | 1968-12-28 | 1976-09-07 | Fujitsu Ltd. | Method of etching films of silicon nitride and silicon dioxide |
| US3642549A (en) * | 1969-01-15 | 1972-02-15 | Ibm | Etching composition indication |
| JPS4714822U (it) * | 1971-03-17 | 1972-10-21 | ||
| FR2288392A1 (fr) * | 1974-10-18 | 1976-05-14 | Radiotechnique Compelec | Procede de realisation de dispositifs semiconducteurs |
| US4040897A (en) * | 1975-05-05 | 1977-08-09 | Signetics Corporation | Etchants for glass films on metal substrates |
-
1978
- 1978-12-29 US US05/974,573 patent/US4230523A/en not_active Expired - Lifetime
-
1979
- 1979-10-03 JP JP12692779A patent/JPS5591131A/ja active Granted
- 1979-10-15 CA CA337,622A patent/CA1126877A/en not_active Expired
- 1979-12-14 DE DE7979105178T patent/DE2967464D1/de not_active Expired
- 1979-12-14 EP EP79105178A patent/EP0012955B1/de not_active Expired
- 1979-12-18 IT IT28130/79A patent/IT1162600B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| US4230523A (en) | 1980-10-28 |
| DE2967464D1 (en) | 1985-07-11 |
| EP0012955A2 (de) | 1980-07-09 |
| EP0012955B1 (de) | 1985-06-05 |
| EP0012955A3 (en) | 1981-12-16 |
| IT1162600B (it) | 1987-04-01 |
| CA1126877A (en) | 1982-06-29 |
| JPS5645297B2 (it) | 1981-10-26 |
| JPS5591131A (en) | 1980-07-10 |
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