IT7928126A0 - Processo di attacco di cromo mediante scarica a bagliore. - Google Patents

Processo di attacco di cromo mediante scarica a bagliore.

Info

Publication number
IT7928126A0
IT7928126A0 IT7928126A IT2812679A IT7928126A0 IT 7928126 A0 IT7928126 A0 IT 7928126A0 IT 7928126 A IT7928126 A IT 7928126A IT 2812679 A IT2812679 A IT 2812679A IT 7928126 A0 IT7928126 A0 IT 7928126A0
Authority
IT
Italy
Prior art keywords
chrome
glow discharge
attacking process
attacking
glow
Prior art date
Application number
IT7928126A
Other languages
English (en)
Other versions
IT1165430B (it
Inventor
Chiu George Tein-Chu
Kitcher James Robert
Ozols Gunars Miervaldis
Zingerman Bryant Nils
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7928126A0 publication Critical patent/IT7928126A0/it
Application granted granted Critical
Publication of IT1165430B publication Critical patent/IT1165430B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H10P50/267—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
IT28126/79A 1978-12-26 1979-12-18 Processo di attacco di cromo medinate scarica a bagliore IT1165430B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/972,844 US4229247A (en) 1978-12-26 1978-12-26 Glow discharge etching process for chromium

Publications (2)

Publication Number Publication Date
IT7928126A0 true IT7928126A0 (it) 1979-12-18
IT1165430B IT1165430B (it) 1987-04-22

Family

ID=25520214

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28126/79A IT1165430B (it) 1978-12-26 1979-12-18 Processo di attacco di cromo medinate scarica a bagliore

Country Status (6)

Country Link
US (1) US4229247A (it)
EP (1) EP0013711B1 (it)
JP (1) JPS5589474A (it)
CA (1) CA1120888A (it)
DE (1) DE2966686D1 (it)
IT (1) IT1165430B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3045922A1 (de) * 1980-12-05 1982-07-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus siliziden oder aus silizid-polysilizium bestehenden schichten durch reaktives sputteraetzen
US4353777A (en) * 1981-04-20 1982-10-12 Lfe Corporation Selective plasma polysilicon etching
US4445966A (en) * 1983-06-20 1984-05-01 Honeywell Inc. Method of plasma etching of films containing chromium
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4925524A (en) * 1987-06-12 1990-05-15 Hewlett-Packard Company Method for forming tungsten structures in a semiconductor
USH596H (en) 1988-02-16 1989-03-07 The United States Of America As Represented By The Secretary Of The Army Method of etching titanium diboride
JP2831646B2 (ja) * 1988-03-25 1998-12-02 株式会社東芝 半導体装置の製造方法
DE69011529T2 (de) * 1989-11-03 1994-12-01 Asm Int Verfahren zum ätzen von halbleiterscheiben mit halogenid in gegenwart von wasser.
JP3013446B2 (ja) * 1990-12-28 2000-02-28 ソニー株式会社 ドライエッチング方法
US6355979B2 (en) * 1999-05-25 2002-03-12 Stmicroelectronics, Inc. Hard mask for copper plasma etch
US9349395B2 (en) * 2012-08-31 2016-05-24 International Business Machines Corporation System and method for differential etching
US9001463B2 (en) 2012-08-31 2015-04-07 International Business Machines Corporaton Magnetic recording head having protected reader sensors and near zero recessed write poles

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
US3951709A (en) * 1974-02-28 1976-04-20 Lfe Corporation Process and material for semiconductor photomask fabrication
JPS5150244A (en) * 1974-10-29 1976-05-01 Tokyo Ohka Kogyo Co Ltd Kuromuno purazumaetsuchinguhoho
US3975252A (en) * 1975-03-14 1976-08-17 Bell Telephone Laboratories, Incorporated High-resolution sputter etching
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
US4172004A (en) * 1977-10-20 1979-10-23 International Business Machines Corporation Method for forming dense dry etched multi-level metallurgy with non-overlapped vias
JPS5494196A (en) * 1977-12-30 1979-07-25 Ibm Metallic layer removing method

Also Published As

Publication number Publication date
IT1165430B (it) 1987-04-22
EP0013711A2 (de) 1980-08-06
JPS5589474A (en) 1980-07-07
DE2966686D1 (en) 1984-03-22
EP0013711B1 (de) 1984-02-15
US4229247A (en) 1980-10-21
CA1120888A (en) 1982-03-30
JPS5641701B2 (it) 1981-09-30
EP0013711A3 (en) 1981-09-16

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