IT7928126A0 - Processo di attacco di cromo mediante scarica a bagliore. - Google Patents
Processo di attacco di cromo mediante scarica a bagliore.Info
- Publication number
- IT7928126A0 IT7928126A0 IT7928126A IT2812679A IT7928126A0 IT 7928126 A0 IT7928126 A0 IT 7928126A0 IT 7928126 A IT7928126 A IT 7928126A IT 2812679 A IT2812679 A IT 2812679A IT 7928126 A0 IT7928126 A0 IT 7928126A0
- Authority
- IT
- Italy
- Prior art keywords
- chrome
- glow discharge
- attacking process
- attacking
- glow
- Prior art date
Links
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/972,844 US4229247A (en) | 1978-12-26 | 1978-12-26 | Glow discharge etching process for chromium |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7928126A0 true IT7928126A0 (it) | 1979-12-18 |
IT1165430B IT1165430B (it) | 1987-04-22 |
Family
ID=25520214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT28126/79A IT1165430B (it) | 1978-12-26 | 1979-12-18 | Processo di attacco di cromo medinate scarica a bagliore |
Country Status (6)
Country | Link |
---|---|
US (1) | US4229247A (it) |
EP (1) | EP0013711B1 (it) |
JP (1) | JPS5589474A (it) |
CA (1) | CA1120888A (it) |
DE (1) | DE2966686D1 (it) |
IT (1) | IT1165430B (it) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3045922A1 (de) * | 1980-12-05 | 1982-07-08 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von strukturen von aus siliziden oder aus silizid-polysilizium bestehenden schichten durch reaktives sputteraetzen |
US4353777A (en) * | 1981-04-20 | 1982-10-12 | Lfe Corporation | Selective plasma polysilicon etching |
US4445966A (en) * | 1983-06-20 | 1984-05-01 | Honeywell Inc. | Method of plasma etching of films containing chromium |
US4818488A (en) * | 1987-02-25 | 1989-04-04 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4943417A (en) * | 1987-02-25 | 1990-07-24 | Adir Jacob | Apparatus for dry sterilization of medical devices and materials |
US4801427A (en) * | 1987-02-25 | 1989-01-31 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US4931261A (en) * | 1987-02-25 | 1990-06-05 | Adir Jacob | Apparatus for dry sterilization of medical devices and materials |
US4917586A (en) * | 1987-02-25 | 1990-04-17 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US4976920A (en) * | 1987-07-14 | 1990-12-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US5200158A (en) * | 1987-02-25 | 1993-04-06 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US5171525A (en) * | 1987-02-25 | 1992-12-15 | Adir Jacob | Process and apparatus for dry sterilization of medical devices and materials |
US5087418A (en) * | 1987-02-25 | 1992-02-11 | Adir Jacob | Process for dry sterilization of medical devices and materials |
US4925524A (en) * | 1987-06-12 | 1990-05-15 | Hewlett-Packard Company | Method for forming tungsten structures in a semiconductor |
JP2831646B2 (ja) * | 1988-03-25 | 1998-12-02 | 株式会社東芝 | 半導体装置の製造方法 |
EP0500670B1 (en) * | 1989-11-03 | 1994-08-10 | Asm International N.V. | Method for halide etching in the presence of water of semi-conductor substrates |
JP3013446B2 (ja) * | 1990-12-28 | 2000-02-28 | ソニー株式会社 | ドライエッチング方法 |
US6355979B2 (en) * | 1999-05-25 | 2002-03-12 | Stmicroelectronics, Inc. | Hard mask for copper plasma etch |
US9349395B2 (en) * | 2012-08-31 | 2016-05-24 | International Business Machines Corporation | System and method for differential etching |
US9001463B2 (en) | 2012-08-31 | 2015-04-07 | International Business Machines Corporaton | Magnetic recording head having protected reader sensors and near zero recessed write poles |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615956A (en) * | 1969-03-27 | 1971-10-26 | Signetics Corp | Gas plasma vapor etching process |
US3951709A (en) * | 1974-02-28 | 1976-04-20 | Lfe Corporation | Process and material for semiconductor photomask fabrication |
JPS5150244A (en) * | 1974-10-29 | 1976-05-01 | Tokyo Ohka Kogyo Co Ltd | Kuromuno purazumaetsuchinguhoho |
US3975252A (en) * | 1975-03-14 | 1976-08-17 | Bell Telephone Laboratories, Incorporated | High-resolution sputter etching |
US3994793A (en) * | 1975-05-22 | 1976-11-30 | International Business Machines Corporation | Reactive ion etching of aluminum |
US4172004A (en) * | 1977-10-20 | 1979-10-23 | International Business Machines Corporation | Method for forming dense dry etched multi-level metallurgy with non-overlapped vias |
JPS5494196A (en) * | 1977-12-30 | 1979-07-25 | Ibm | Metallic layer removing method |
-
1978
- 1978-12-26 US US05/972,844 patent/US4229247A/en not_active Expired - Lifetime
-
1979
- 1979-09-07 JP JP11438079A patent/JPS5589474A/ja active Granted
- 1979-10-15 CA CA000337621A patent/CA1120888A/en not_active Expired
- 1979-11-27 EP EP79104716A patent/EP0013711B1/de not_active Expired
- 1979-11-27 DE DE7979104716T patent/DE2966686D1/de not_active Expired
- 1979-12-18 IT IT28126/79A patent/IT1165430B/it active
Also Published As
Publication number | Publication date |
---|---|
CA1120888A (en) | 1982-03-30 |
JPS5589474A (en) | 1980-07-07 |
IT1165430B (it) | 1987-04-22 |
EP0013711A2 (de) | 1980-08-06 |
EP0013711A3 (en) | 1981-09-16 |
EP0013711B1 (de) | 1984-02-15 |
JPS5641701B2 (it) | 1981-09-30 |
US4229247A (en) | 1980-10-21 |
DE2966686D1 (en) | 1984-03-22 |
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