USH596H - Method of etching titanium diboride - Google Patents
Method of etching titanium diboride Download PDFInfo
- Publication number
- USH596H USH596H US07/156,124 US15612488A USH596H US H596 H USH596 H US H596H US 15612488 A US15612488 A US 15612488A US H596 H USH596 H US H596H
- Authority
- US
- United States
- Prior art keywords
- mixture
- gas
- dry etchant
- fluoride
- chloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 229910033181 TiB2 Inorganic materials 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims description 19
- 238000005530 etching Methods 0.000 title claims description 9
- 239000007789 gas Substances 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 229910052756 noble gas Inorganic materials 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 238000000206 photolithography Methods 0.000 claims abstract description 7
- 230000005684 electric field Effects 0.000 claims description 3
- 239000004338 Dichlorodifluoromethane Substances 0.000 claims description 2
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical group FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 claims description 2
- 235000019404 dichlorodifluoromethane Nutrition 0.000 claims description 2
- 150000001805 chlorine compounds Chemical group 0.000 claims 1
- 150000002222 fluorine compounds Chemical group 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
Definitions
- This invention relates in general to a method of etching titanium diboride and in particular to a method of dry etching a thin film of titanium diboride that has been deposited onto a substrate and patterned using photolithography.
- Titanium diboride has become of interest in laboratory research because of its resistance to change or degradation at high temperatures. It also shows promise in acting as a diffusion barrier to other metals.
- the general object of this invention is to provide a method of etching titanium diboride.
- a more particular object of this invention is to provide a method of etching a thin film of titanium diboride that has been deposited onto a substrate and patterned using photolithography.
- a thin film of titanium diboride that has been deposited onto a substrate and patterned using photolithography is dry etched by first mounting the substrate bearing the patterned thin film on the lower electrode of pair of electrodes in the etch chamber of a commercial plasma etcher or plasma therm etcher.
- the etch chamber is evacuated to a pressure of about 10 -6 Torr and a dry etchant as, for example, dichlorodifluoromethane (CCl 2 F 2 ) admitted at a flow rate of about 1 to 100 sccm and a pressure set at about 1 to 500 mTorr.
- a dry etchant as, for example, dichlorodifluoromethane (CCl 2 F 2 ) admitted at a flow rate of about 1 to 100 sccm and a pressure set at about 1 to 500 mTorr.
- An electric field is applied between the electrodes, the power level set at about 50 to 1000 watts and etching allowed to proceed for the desired time.
- the sample is removed and the etch rate determined by measuring the etch depth and dividing by the etch time.
- a thin film of TiB 2 is first deposited on a gallium arsenide substrate by e-beam evaporation and the substrate with thin film of TiB 2 then patterned using photolithography.
- the substrate bearing the patterned film is then mounted on the lower electrode of a pair of electrodes in the etch chamber of a commercial plasma etcher.
- the etch chamber with the electrodes inside is then evacuated to a pressure of about 10 -6 Torr.
- CCl 2 F 2 is then admitted into the etch chamber at a flow rate of about 2 to 40 sccm and the pressure set at 10 to 200 mTorr.
- An electric field is applied between the electrodes and the power level set at 150 to 400 watts.
- the etch is allowed to proceed until the TiB 2 is completely removed in the areas exposed by the photolithography.
- etch TiB 2 Other dry etch processes that can be used to etch TiB 2 include reactive ion beam etching (RIBE), chemically assisted ion beam etching (CAIBE), reactive ion etching (RIE), and magetron ion etching (MIE).
- RIBE reactive ion beam etching
- CAIBE chemically assisted ion beam etching
- RIE reactive ion etching
- MIE magetron ion etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A thin film of titanium diboride that has been deposited onto a substrate d patterned using photolithography is dry etched in a commercial plasma etcher with either a chloride, or a mixture of a chloride gas with oxygen, or a mixture of a chloride gas with nitrogen, or a mixture of a chloride gas with a noble gas, or a fluoride gas, or a mixture of a fluoride gas with oxygen, or a mixture of a fluoride gas with nitrogen, or a mixture of a fluoride gas with a noble gas.
Description
The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to me of any royalty thereon.
This invention relates in general to a method of etching titanium diboride and in particular to a method of dry etching a thin film of titanium diboride that has been deposited onto a substrate and patterned using photolithography.
Titanium diboride has become of interest in laboratory research because of its resistance to change or degradation at high temperatures. It also shows promise in acting as a diffusion barrier to other metals.
One of the difficulties involved with working with titanium diboride is that because of its resistance to attack, it is difficult to pattern. In fact, no wet etches have been available to carry out such patterning.
The general object of this invention is to provide a method of etching titanium diboride. A more particular object of this invention is to provide a method of etching a thin film of titanium diboride that has been deposited onto a substrate and patterned using photolithography.
It has now been found that the aforementioned objects can be attained by etching titanium diboride with a dry etch.
More particularly, according to the invention, a thin film of titanium diboride that has been deposited onto a substrate and patterned using photolithography is dry etched by first mounting the substrate bearing the patterned thin film on the lower electrode of pair of electrodes in the etch chamber of a commercial plasma etcher or plasma therm etcher. The etch chamber is evacuated to a pressure of about 10-6 Torr and a dry etchant as, for example, dichlorodifluoromethane (CCl2 F2) admitted at a flow rate of about 1 to 100 sccm and a pressure set at about 1 to 500 mTorr. An electric field is applied between the electrodes, the power level set at about 50 to 1000 watts and etching allowed to proceed for the desired time.
Other dry etchants that will etch TiB2 include a chloride gas, a mixture of a chloride gas with oxygen, a mixture of a chloride gas with nitrogen, a mixture of a chloride gas with a noble gas, a fluoride gas, a mixture of a fluoride gas with nitrogen, a mixture of a fluoride gas with oxygen, and a mixture of a fluoride gas with a noble gas.
After the dry etch, the sample is removed and the etch rate determined by measuring the etch depth and dividing by the etch time.
By adjusting the process parameters, one is able to attain etch rates of 5 to 800 Å/min for TiB2. This is useful for patterning TiB2 as a diffusion barrier or a Schottky contact to semiconductors.
A thin film of TiB2 is first deposited on a gallium arsenide substrate by e-beam evaporation and the substrate with thin film of TiB2 then patterned using photolithography.
The substrate bearing the patterned film is then mounted on the lower electrode of a pair of electrodes in the etch chamber of a commercial plasma etcher. The etch chamber with the electrodes inside is then evacuated to a pressure of about 10-6 Torr. CCl2 F2 is then admitted into the etch chamber at a flow rate of about 2 to 40 sccm and the pressure set at 10 to 200 mTorr. An electric field is applied between the electrodes and the power level set at 150 to 400 watts. The etch is allowed to proceed until the TiB2 is completely removed in the areas exposed by the photolithography.
Other dry etch processes that can be used to etch TiB2 include reactive ion beam etching (RIBE), chemically assisted ion beam etching (CAIBE), reactive ion etching (RIE), and magetron ion etching (MIE).
I wish it to be understood that I do not desire to be limited to the exact details as described for obvious modifications will occur to a person skilled in the art.
Claims (11)
1. Method of etching a thin film of titanium diboride that has been deposited onto a substrate and patterned using photolithography, said method including the steps of:
(A) mounting a substrate bearing a patterned thin film of titanium diboride on a lower electrode of a pair of electrodes in an etch chamber of a plasma therm etcher,
(B) evacuating the etch chamber to a pressure of about 10-6 Torr,
(C) admitting a dry etchant to the etch chamber at a flow rate of about 1 to 100 sccm and a pressure set at about 1 to 500 mTorr,
(D) applying an electric field between the pair or electrodes and setting the power level at about 50 to 1000 watts, and
(E) allowing the etch to proceed for a preselected time.
2. Method according to claim 1 wherein the dry etchant is selected from the group consisting of a chloride gas, a mixture of a chloride gas with oxygen, a mixture of chloride gas with nitrogen, a mixture of a chloride gas with noble gas, a fluoride gas, a mixture of a fluoride gas with oxygen, a mixture of a fluoride gas with nitrogen, and a mixture of a fluoride gas with a noble gas.
3. Method according to claim 2 wherein the dry etchant is a chloride gas.
4. Method according to claim 3 wherein the dry etchant is dichlorodifluoromethane.
5. Method according to claim 2 wherein the dry etchant is a mixture of chloride gas with oxygen.
6. Method according to claim 2 wherein the dry etchant is a mixture of chloride gas with nitrogen.
7. Method according to claim 2 wherein the dry etchant is a mixture of a chloride gas with a noble gas.
8. Method according to claim 2 wherein the dry etchant is a fluoride gas.
9. Method according to claim 2 wherein the dry etchant is a mixture of a fluoride gas with oxygen.
10. Method according to claim 2 wherein the dry etchant is a mixture of a fluoride gas with nitrogen.
11. Method according to claim 2 wherein the dry etchant is a mixture of a fluoride gas with a noble gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/156,124 USH596H (en) | 1988-02-16 | 1988-02-16 | Method of etching titanium diboride |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/156,124 USH596H (en) | 1988-02-16 | 1988-02-16 | Method of etching titanium diboride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USH596H true USH596H (en) | 1989-03-07 |
Family
ID=34865637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US07/156,124 Abandoned USH596H (en) | 1988-02-16 | 1988-02-16 | Method of etching titanium diboride |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | USH596H (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4203800A (en) | 1977-12-30 | 1980-05-20 | International Business Machines Corporation | Reactive ion etching process for metals |
| US4229247A (en) | 1978-12-26 | 1980-10-21 | International Business Machines Corporation | Glow discharge etching process for chromium |
| US4440841A (en) | 1981-02-28 | 1984-04-03 | Dai Nippon Insatsu Kabushiki Kaisha | Photomask and photomask blank |
| US4473436A (en) | 1982-05-05 | 1984-09-25 | Siemens Aktiengesellschaft | Method of producing structures from double layers of metal silicide and polysilicon on integrated circuit substrates by RIE utilizing SF6 and Cl2 |
| US4635343A (en) | 1983-03-14 | 1987-01-13 | Fujitsu Limited | Method of manufacturing GaAs semiconductor device |
| US4647339A (en) | 1984-05-23 | 1987-03-03 | British Telecommunications | Production of semiconductor devices |
| US4668335A (en) | 1985-08-30 | 1987-05-26 | Advanced Micro Devices, Inc. | Anti-corrosion treatment for patterning of metallic layers |
| US4680086A (en) | 1986-03-20 | 1987-07-14 | Motorola, Inc. | Dry etching of multi-layer structures |
| US4734157A (en) | 1985-08-27 | 1988-03-29 | International Business Machines Corporation | Selective and anisotropic dry etching |
-
1988
- 1988-02-16 US US07/156,124 patent/USH596H/en not_active Abandoned
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4203800A (en) | 1977-12-30 | 1980-05-20 | International Business Machines Corporation | Reactive ion etching process for metals |
| US4229247A (en) | 1978-12-26 | 1980-10-21 | International Business Machines Corporation | Glow discharge etching process for chromium |
| US4440841A (en) | 1981-02-28 | 1984-04-03 | Dai Nippon Insatsu Kabushiki Kaisha | Photomask and photomask blank |
| US4473436A (en) | 1982-05-05 | 1984-09-25 | Siemens Aktiengesellschaft | Method of producing structures from double layers of metal silicide and polysilicon on integrated circuit substrates by RIE utilizing SF6 and Cl2 |
| US4635343A (en) | 1983-03-14 | 1987-01-13 | Fujitsu Limited | Method of manufacturing GaAs semiconductor device |
| US4647339A (en) | 1984-05-23 | 1987-03-03 | British Telecommunications | Production of semiconductor devices |
| US4734157A (en) | 1985-08-27 | 1988-03-29 | International Business Machines Corporation | Selective and anisotropic dry etching |
| US4668335A (en) | 1985-08-30 | 1987-05-26 | Advanced Micro Devices, Inc. | Anti-corrosion treatment for patterning of metallic layers |
| US4680086A (en) | 1986-03-20 | 1987-07-14 | Motorola, Inc. | Dry etching of multi-layer structures |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
| AS | Assignment |
Owner name: UNITED STATES OF AMERICA, THE, AS REPRESENTED BY T Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:HEATH, LINDA S.;REEL/FRAME:005044/0906 Effective date: 19880209 |