IT7927084A0 - Metodo per irradiare una pellicola di silicio policristallino mediante impulsi radar. - Google Patents
Metodo per irradiare una pellicola di silicio policristallino mediante impulsi radar.Info
- Publication number
- IT7927084A0 IT7927084A0 IT7927084A IT2708479A IT7927084A0 IT 7927084 A0 IT7927084 A0 IT 7927084A0 IT 7927084 A IT7927084 A IT 7927084A IT 2708479 A IT2708479 A IT 2708479A IT 7927084 A0 IT7927084 A0 IT 7927084A0
- Authority
- IT
- Italy
- Prior art keywords
- iradiateing
- polycrystalline silicon
- silicon film
- radar pulses
- radar
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/934—Sheet resistance, i.e. dopant parameters
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/963,818 US4198246A (en) | 1978-11-27 | 1978-11-27 | Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7927084A0 true IT7927084A0 (it) | 1979-11-06 |
IT1124922B IT1124922B (it) | 1986-05-14 |
Family
ID=25507760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT27084/79A IT1124922B (it) | 1978-11-27 | 1979-11-06 | Metodo per irradiare una pellicola di silicio policristallino mediante impulsi radar |
Country Status (6)
Country | Link |
---|---|
US (1) | US4198246A (it) |
JP (1) | JPS5575225A (it) |
DE (1) | DE2947180A1 (it) |
FR (1) | FR2442507A1 (it) |
GB (1) | GB2035692B (it) |
IT (1) | IT1124922B (it) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56500912A (it) * | 1979-07-24 | 1981-07-02 | ||
US4305973A (en) * | 1979-07-24 | 1981-12-15 | Hughes Aircraft Company | Laser annealed double conductor structure |
US4229502A (en) * | 1979-08-10 | 1980-10-21 | Rca Corporation | Low-resistivity polycrystalline silicon film |
JPS5638815A (en) * | 1979-09-07 | 1981-04-14 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
US4309225A (en) * | 1979-09-13 | 1982-01-05 | Massachusetts Institute Of Technology | Method of crystallizing amorphous material with a moving energy beam |
US4370175A (en) * | 1979-12-03 | 1983-01-25 | Bernard B. Katz | Method of annealing implanted semiconductors by lasers |
JPS5688818A (en) * | 1979-12-17 | 1981-07-18 | Hitachi Ltd | Polycrystalline silicon membrane and its production |
JPS56145198A (en) * | 1980-04-04 | 1981-11-11 | Hitachi Ltd | Forming method of single crystal silicon membrane and device therefor |
US4476478A (en) * | 1980-04-24 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor read only memory and method of making the same |
US4379020A (en) * | 1980-06-16 | 1983-04-05 | Massachusetts Institute Of Technology | Polycrystalline semiconductor processing |
JPS577967A (en) * | 1980-06-19 | 1982-01-16 | Oki Electric Ind Co Ltd | Structure of mos transistor and manufacture thereof |
US4803528A (en) * | 1980-07-28 | 1989-02-07 | General Electric Company | Insulating film having electrically conducting portions |
US4339285A (en) * | 1980-07-28 | 1982-07-13 | Rca Corporation | Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation |
US4494300A (en) * | 1981-06-30 | 1985-01-22 | International Business Machines, Inc. | Process for forming transistors using silicon ribbons as substrates |
US4475027A (en) * | 1981-11-17 | 1984-10-02 | Allied Corporation | Optical beam homogenizer |
US4395467A (en) * | 1981-12-30 | 1983-07-26 | Rca Corporation | Transparent conductive film having areas of high and low resistivity |
US4536231A (en) * | 1982-10-19 | 1985-08-20 | Harris Corporation | Polysilicon thin films of improved electrical uniformity |
US4475955A (en) * | 1982-12-06 | 1984-10-09 | Harris Corporation | Method for forming integrated circuits bearing polysilicon of reduced resistance |
US4472210A (en) * | 1983-01-07 | 1984-09-18 | Rca Corporation | Method of making a semiconductor device to improve conductivity of amorphous silicon films |
DE3319605A1 (de) * | 1983-05-30 | 1984-12-06 | Siemens AG, 1000 Berlin und 8000 München | Sensor mit polykristallinen silicium-widerstaenden |
US5030295A (en) * | 1990-02-12 | 1991-07-09 | Electric Power Research Institut | Radiation resistant passivation of silicon solar cells |
JPH06124913A (ja) | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
US6323071B1 (en) | 1992-12-04 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor device |
US5403762A (en) * | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
US6324195B1 (en) * | 1999-01-13 | 2001-11-27 | Kaneka Corporation | Laser processing of a thin film |
JPWO2003043070A1 (ja) * | 2001-11-12 | 2005-03-10 | ソニー株式会社 | レーザアニール装置及び薄膜トランジスタの製造方法 |
US6964906B2 (en) * | 2002-07-02 | 2005-11-15 | International Business Machines Corporation | Programmable element with selectively conductive dopant and method for programming same |
JP5116463B2 (ja) * | 2005-02-23 | 2013-01-09 | パナソニック株式会社 | プラズマドーピング方法及び装置 |
US20070269611A1 (en) * | 2006-03-31 | 2007-11-22 | Intematix Corporation | Systems and methods of combinatorial synthesis |
US20080113877A1 (en) * | 2006-08-16 | 2008-05-15 | Intematix Corporation | Liquid solution deposition of composition gradient materials |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
FR2284189A1 (fr) * | 1974-09-03 | 1976-04-02 | Radiotechnique Compelec | Procede de depot de materiau semi-conducteur polycristallin |
US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
DE2705444A1 (de) * | 1977-02-09 | 1978-08-10 | Siemens Ag | Verfahren zur lokal begrenzten erwaermung eines festkoerpers |
-
1978
- 1978-11-27 US US05/963,818 patent/US4198246A/en not_active Expired - Lifetime
-
1979
- 1979-11-06 IT IT27084/79A patent/IT1124922B/it active
- 1979-11-20 GB GB7940030A patent/GB2035692B/en not_active Expired
- 1979-11-22 JP JP15194679A patent/JPS5575225A/ja active Pending
- 1979-11-23 DE DE19792947180 patent/DE2947180A1/de not_active Withdrawn
- 1979-11-26 FR FR7929067A patent/FR2442507A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5575225A (en) | 1980-06-06 |
US4198246A (en) | 1980-04-15 |
FR2442507A1 (fr) | 1980-06-20 |
GB2035692B (en) | 1983-05-05 |
GB2035692A (en) | 1980-06-18 |
IT1124922B (it) | 1986-05-14 |
FR2442507B1 (it) | 1984-01-06 |
DE2947180A1 (de) | 1980-06-04 |
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