GB2035692B - Reducing resistance of a polycrystalline silicon film - Google Patents

Reducing resistance of a polycrystalline silicon film

Info

Publication number
GB2035692B
GB2035692B GB7940030A GB7940030A GB2035692B GB 2035692 B GB2035692 B GB 2035692B GB 7940030 A GB7940030 A GB 7940030A GB 7940030 A GB7940030 A GB 7940030A GB 2035692 B GB2035692 B GB 2035692B
Authority
GB
United Kingdom
Prior art keywords
polycrystalline silicon
silicon film
reducing resistance
resistance
reducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7940030A
Other versions
GB2035692A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB2035692A publication Critical patent/GB2035692A/en
Application granted granted Critical
Publication of GB2035692B publication Critical patent/GB2035692B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters
GB7940030A 1978-11-27 1979-11-20 Reducing resistance of a polycrystalline silicon film Expired GB2035692B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/963,818 US4198246A (en) 1978-11-27 1978-11-27 Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film

Publications (2)

Publication Number Publication Date
GB2035692A GB2035692A (en) 1980-06-18
GB2035692B true GB2035692B (en) 1983-05-05

Family

ID=25507760

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7940030A Expired GB2035692B (en) 1978-11-27 1979-11-20 Reducing resistance of a polycrystalline silicon film

Country Status (6)

Country Link
US (1) US4198246A (en)
JP (1) JPS5575225A (en)
DE (1) DE2947180A1 (en)
FR (1) FR2442507A1 (en)
GB (1) GB2035692B (en)
IT (1) IT1124922B (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3071895D1 (en) * 1979-07-24 1987-02-26 Hughes Aircraft Co Silicon on sapphire laser process
US4305973A (en) * 1979-07-24 1981-12-15 Hughes Aircraft Company Laser annealed double conductor structure
US4229502A (en) * 1979-08-10 1980-10-21 Rca Corporation Low-resistivity polycrystalline silicon film
JPS5638815A (en) * 1979-09-07 1981-04-14 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
US4370175A (en) * 1979-12-03 1983-01-25 Bernard B. Katz Method of annealing implanted semiconductors by lasers
JPS5688818A (en) * 1979-12-17 1981-07-18 Hitachi Ltd Polycrystalline silicon membrane and its production
JPS56145198A (en) * 1980-04-04 1981-11-11 Hitachi Ltd Forming method of single crystal silicon membrane and device therefor
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
US4379020A (en) * 1980-06-16 1983-04-05 Massachusetts Institute Of Technology Polycrystalline semiconductor processing
JPS577967A (en) * 1980-06-19 1982-01-16 Oki Electric Ind Co Ltd Structure of mos transistor and manufacture thereof
US4803528A (en) * 1980-07-28 1989-02-07 General Electric Company Insulating film having electrically conducting portions
US4339285A (en) * 1980-07-28 1982-07-13 Rca Corporation Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation
US4494300A (en) * 1981-06-30 1985-01-22 International Business Machines, Inc. Process for forming transistors using silicon ribbons as substrates
US4475027A (en) * 1981-11-17 1984-10-02 Allied Corporation Optical beam homogenizer
US4395467A (en) * 1981-12-30 1983-07-26 Rca Corporation Transparent conductive film having areas of high and low resistivity
US4536231A (en) * 1982-10-19 1985-08-20 Harris Corporation Polysilicon thin films of improved electrical uniformity
US4475955A (en) * 1982-12-06 1984-10-09 Harris Corporation Method for forming integrated circuits bearing polysilicon of reduced resistance
US4472210A (en) * 1983-01-07 1984-09-18 Rca Corporation Method of making a semiconductor device to improve conductivity of amorphous silicon films
DE3319605A1 (en) * 1983-05-30 1984-12-06 Siemens AG, 1000 Berlin und 8000 München SENSOR WITH POLYCRYSTALLINE SILICON RESISTORS
US5030295A (en) * 1990-02-12 1991-07-09 Electric Power Research Institut Radiation resistant passivation of silicon solar cells
JPH06124913A (en) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd Laser treatment
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US6323071B1 (en) 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US6324195B1 (en) * 1999-01-13 2001-11-27 Kaneka Corporation Laser processing of a thin film
TW200304175A (en) * 2001-11-12 2003-09-16 Sony Corp Laser annealing device and thin-film transistor manufacturing method
US6964906B2 (en) * 2002-07-02 2005-11-15 International Business Machines Corporation Programmable element with selectively conductive dopant and method for programming same
US20090233383A1 (en) * 2005-02-23 2009-09-17 Tomohiro Okumura Plasma Doping Method and Apparatus
US20070269611A1 (en) * 2006-03-31 2007-11-22 Intematix Corporation Systems and methods of combinatorial synthesis
US20080113877A1 (en) * 2006-08-16 2008-05-15 Intematix Corporation Liquid solution deposition of composition gradient materials

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
FR2284189A1 (en) * 1974-09-03 1976-04-02 Radiotechnique Compelec Forming polycrystalline areas on substrate - using laser or electron beam preparing areas for epitaxial deposition
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
DE2705444A1 (en) * 1977-02-09 1978-08-10 Siemens Ag Semiconductor prodn. process using locally limited heating - involves electromagnetic irradiation in specified pulses through mask

Also Published As

Publication number Publication date
US4198246A (en) 1980-04-15
FR2442507B1 (en) 1984-01-06
GB2035692A (en) 1980-06-18
IT7927084A0 (en) 1979-11-06
DE2947180A1 (en) 1980-06-04
IT1124922B (en) 1986-05-14
JPS5575225A (en) 1980-06-06
FR2442507A1 (en) 1980-06-20

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee