IT1309069B1 - Procedimento per il trattamento ad umido con acidi di dischi asemiconduttori. - Google Patents

Procedimento per il trattamento ad umido con acidi di dischi asemiconduttori.

Info

Publication number
IT1309069B1
IT1309069B1 IT1999MI000120A ITMI990120A IT1309069B1 IT 1309069 B1 IT1309069 B1 IT 1309069B1 IT 1999MI000120 A IT1999MI000120 A IT 1999MI000120A IT MI990120 A ITMI990120 A IT MI990120A IT 1309069 B1 IT1309069 B1 IT 1309069B1
Authority
IT
Italy
Prior art keywords
asemiconductive
discs
acids
procedure
wet treatment
Prior art date
Application number
IT1999MI000120A
Other languages
English (en)
Inventor
Franz Sumnitsch
Gerald Wagner
Original Assignee
Sez Semiconduct Equip Zubehoer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sez Semiconduct Equip Zubehoer filed Critical Sez Semiconduct Equip Zubehoer
Publication of ITMI990120A1 publication Critical patent/ITMI990120A1/it
Application granted granted Critical
Publication of IT1309069B1 publication Critical patent/IT1309069B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
IT1999MI000120A 1998-02-11 1999-01-22 Procedimento per il trattamento ad umido con acidi di dischi asemiconduttori. IT1309069B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19805525A DE19805525C2 (de) 1998-02-11 1998-02-11 Verfahren zum Naßätzen von Halbleiterscheiben zum Erzeugen eines definierten Randbereichs durch Unterätzen

Publications (2)

Publication Number Publication Date
ITMI990120A1 ITMI990120A1 (it) 2000-07-22
IT1309069B1 true IT1309069B1 (it) 2002-01-16

Family

ID=7857360

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI000120A IT1309069B1 (it) 1998-02-11 1999-01-22 Procedimento per il trattamento ad umido con acidi di dischi asemiconduttori.

Country Status (6)

Country Link
US (1) US6162739A (it)
JP (1) JP3242082B2 (it)
DE (1) DE19805525C2 (it)
GB (1) GB2334374B (it)
IT (1) IT1309069B1 (it)
TW (1) TW421830B (it)

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US6413436B1 (en) * 1999-01-27 2002-07-02 Semitool, Inc. Selective treatment of the surface of a microelectronic workpiece
EP1052682B1 (de) * 1999-04-28 2002-01-09 SEZ Semiconductor-Equipment Zubehör für die Halbleiterfertigung AG Vorrichtung und Verfahren zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen
US6309981B1 (en) * 1999-10-01 2001-10-30 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
US7780867B1 (en) 1999-10-01 2010-08-24 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
US20050205111A1 (en) * 1999-10-12 2005-09-22 Ritzdorf Thomas L Method and apparatus for processing a microfeature workpiece with multiple fluid streams
WO2001027357A1 (en) * 1999-10-12 2001-04-19 Semitool, Inc. Method and apparatus for executing plural processes on a microelectronic workpiece at a single processing station
US6586342B1 (en) 2000-04-25 2003-07-01 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
US6762132B1 (en) * 2000-08-31 2004-07-13 Micron Technology, Inc. Compositions for dissolution of low-K dielectric films, and methods of use
US6689418B2 (en) 2001-08-03 2004-02-10 Applied Materials Inc. Apparatus for wafer rinse and clean and edge etching
US6743722B2 (en) 2002-01-29 2004-06-01 Strasbaugh Method of spin etching wafers with an alkali solution
TWI270116B (en) * 2002-03-06 2007-01-01 Winbond Electronics Corp Method for removing Si-needle of deep trench
US20030230548A1 (en) * 2002-06-18 2003-12-18 Wolfgang Sievert Acid etching mixture having reduced water content
DE10302611B4 (de) * 2003-01-23 2011-07-07 Siltronic AG, 81737 Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild
WO2004079811A1 (ja) 2003-03-06 2004-09-16 Sekisui Chemical Co., Ltd. プラズマ処理装置及び方法
KR100525300B1 (ko) * 2003-12-23 2005-11-02 동부아남반도체 주식회사 소자분리막 형성 방법
US20050161808A1 (en) * 2004-01-22 2005-07-28 Anderson Douglas G. Wafer, intermediate wafer assembly and associated method for fabricating a silicon on insulator wafer having an improved edge profile
US7193295B2 (en) * 2004-08-20 2007-03-20 Semitool, Inc. Process and apparatus for thinning a semiconductor workpiece
US7288489B2 (en) * 2004-08-20 2007-10-30 Semitool, Inc. Process for thinning a semiconductor workpiece
US7354649B2 (en) 2004-08-20 2008-04-08 Semitool, Inc. Semiconductor workpiece
US20060040111A1 (en) * 2004-08-20 2006-02-23 Dolechek Kert L Process chamber and system for thinning a semiconductor workpiece
US20060046499A1 (en) * 2004-08-20 2006-03-02 Dolechek Kert L Apparatus for use in thinning a semiconductor workpiece
US7718009B2 (en) * 2004-08-30 2010-05-18 Applied Materials, Inc. Cleaning submicron structures on a semiconductor wafer surface
TWI283442B (en) * 2004-09-09 2007-07-01 Sez Ag Method for selective etching
KR100676599B1 (ko) * 2005-02-28 2007-01-30 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
US7713885B2 (en) * 2005-05-11 2010-05-11 Micron Technology, Inc. Methods of etching oxide, reducing roughness, and forming capacitor constructions
US20070207622A1 (en) * 2006-02-23 2007-09-06 Micron Technology, Inc. Highly selective doped oxide etchant
US8100081B1 (en) 2006-06-30 2012-01-24 Novellus Systems, Inc. Edge removal of films using externally generated plasma species
US9732416B1 (en) 2007-04-18 2017-08-15 Novellus Systems, Inc. Wafer chuck with aerodynamic design for turbulence reduction
TWI430348B (zh) * 2008-03-31 2014-03-11 Memc Electronic Materials 蝕刻矽晶圓邊緣的方法
US8419964B2 (en) * 2008-08-27 2013-04-16 Novellus Systems, Inc. Apparatus and method for edge bevel removal of copper from silicon wafers
JP2012509599A (ja) * 2008-11-19 2012-04-19 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 半導体ウェーハのエッジを剥離する方法及びシステム
US8172646B2 (en) * 2009-02-27 2012-05-08 Novellus Systems, Inc. Magnetically actuated chuck for edge bevel removal
JP5795461B2 (ja) * 2009-08-19 2015-10-14 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
CN102446736A (zh) * 2011-12-15 2012-05-09 天津中环领先材料技术有限公司 一种用hf和冰乙酸配制的腐蚀液去除晶圆边缘氧化膜的方法
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
CN102978711A (zh) * 2012-12-12 2013-03-20 天津中环领先材料技术有限公司 一种采用低温hf腐蚀液去除硅晶圆片边缘氧化膜的方法
US9472453B2 (en) 2014-03-13 2016-10-18 Qualcomm Incorporated Systems and methods of forming a reduced capacitance device

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JPS4952799A (it) * 1972-09-22 1974-05-22
FR2288392A1 (fr) * 1974-10-18 1976-05-14 Radiotechnique Compelec Procede de realisation de dispositifs semiconducteurs
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
US4230522A (en) * 1978-12-26 1980-10-28 Rockwell International Corporation PNAF Etchant for aluminum and silicon
JPS5855324A (ja) * 1981-09-26 1983-04-01 Toshiba Corp シリコン酸化膜の腐食液
JPS6039176A (ja) * 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
US4620934A (en) * 1984-04-26 1986-11-04 Allied Corporation Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4
JPS63283028A (ja) * 1986-09-29 1988-11-18 Hashimoto Kasei Kogyo Kk 微細加工表面処理剤
US4871422A (en) * 1987-01-27 1989-10-03 Olin Corporation Etching solutions containing ammonium fluoride and anionic sulfate esters of alkylphenol polyglycidol ethers and method of etching
US4759823A (en) * 1987-06-02 1988-07-26 Krysalis Corporation Method for patterning PLZT thin films
JP2852355B2 (ja) * 1989-06-26 1999-02-03 ステラケミファ株式会社 微細加工表面処理剤
DE69029228T2 (de) * 1989-06-26 1997-06-12 Hashimoto Chemical Ind Co Oberflächenbehandlungsmittel für Präzisionsoberflächenbehandlung
JPH04185693A (ja) * 1990-11-21 1992-07-02 Hitachi Ltd 抵抗膜のエッチング液組成物及びそれを使用したエッチング方法
WO1994018696A1 (en) * 1993-02-04 1994-08-18 Daikin Industries, Ltd. Wet-etching composition for semiconductors excellent in wettability
WO1994027314A1 (en) * 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
US5439553A (en) * 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
JPH09181026A (ja) * 1995-12-25 1997-07-11 Toshiba Corp 半導体装置の製造装置
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US5824601A (en) * 1997-06-30 1998-10-20 Motorola, Inc. Carboxylic acid etching solution and method
US5972124A (en) * 1998-08-31 1999-10-26 Advanced Micro Devices, Inc. Method for cleaning a surface of a dielectric material

Also Published As

Publication number Publication date
GB2334374A (en) 1999-08-18
DE19805525C2 (de) 2002-06-13
JPH11274147A (ja) 1999-10-08
ITMI990120A1 (it) 2000-07-22
JP3242082B2 (ja) 2001-12-25
US6162739A (en) 2000-12-19
GB9901810D0 (en) 1999-03-17
GB2334374B (en) 2002-09-04
DE19805525A1 (de) 1999-08-19
TW421830B (en) 2001-02-11

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