IT1305646B1 - Formazione di globuli d'oro saldati su piazzuole di collegamento esuccessiva coniatura della loro sommita' - Google Patents
Formazione di globuli d'oro saldati su piazzuole di collegamento esuccessiva coniatura della loro sommita'Info
- Publication number
- IT1305646B1 IT1305646B1 ITVA980019A IT1305646B1 IT 1305646 B1 IT1305646 B1 IT 1305646B1 IT VA980019 A ITVA980019 A IT VA980019A IT 1305646 B1 IT1305646 B1 IT 1305646B1
- Authority
- IT
- Italy
- Prior art keywords
- coining
- summit
- pitches
- welded
- formation
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/118—Post-treatment of the bump connector
- H01L2224/1183—Reworking, e.g. shaping
- H01L2224/1184—Reworking, e.g. shaping involving a mechanical process, e.g. planarising the bump connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13016—Shape in side view
- H01L2224/13017—Shape in side view being non uniform along the bump connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/13124—Aluminium [Al] as principal constituent
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- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2924/00013—Fully indexed content
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- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/012—Semiconductor purity grades
- H01L2924/01203—3N purity grades, i.e. 99.9%
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT98VA000019 IT1305646B1 (it) | 1998-08-07 | 1998-08-07 | Formazione di globuli d'oro saldati su piazzuole di collegamento esuccessiva coniatura della loro sommita' |
US09/368,560 US6260753B1 (en) | 1998-08-07 | 1999-08-05 | Gold bumps bonding on connection pads and subsequent coining of their vertex |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT98VA000019 IT1305646B1 (it) | 1998-08-07 | 1998-08-07 | Formazione di globuli d'oro saldati su piazzuole di collegamento esuccessiva coniatura della loro sommita' |
Publications (3)
Publication Number | Publication Date |
---|---|
ITVA980019A0 ITVA980019A0 (it) | 1998-08-07 |
ITVA980019A1 ITVA980019A1 (it) | 2000-02-07 |
IT1305646B1 true IT1305646B1 (it) | 2001-05-15 |
Family
ID=11423483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT98VA000019 IT1305646B1 (it) | 1998-08-07 | 1998-08-07 | Formazione di globuli d'oro saldati su piazzuole di collegamento esuccessiva coniatura della loro sommita' |
Country Status (2)
Country | Link |
---|---|
US (1) | US6260753B1 (it) |
IT (1) | IT1305646B1 (it) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6527163B1 (en) * | 2000-01-21 | 2003-03-04 | Tessera, Inc. | Methods of making bondable contacts and a tool for making such contacts |
IT1317214B1 (it) * | 2000-04-11 | 2003-05-27 | St Microelectronics Srl | Struttura di capillare per il collegamento di fili di rame da un chipdi circuito a semiconduttore e un connettore terminale corrispondente |
TW515067B (en) * | 2001-05-31 | 2002-12-21 | Orient Semiconductor Elect Ltd | Metal bump having higher pillar and the fabricated device thereof |
JP3573133B2 (ja) * | 2002-02-19 | 2004-10-06 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
US6622903B1 (en) * | 2002-03-27 | 2003-09-23 | Palomar Technologies, Inc. | Production of a tailless ball bump |
US7229906B2 (en) * | 2002-09-19 | 2007-06-12 | Kulicke And Soffa Industries, Inc. | Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine |
WO2010120473A2 (en) * | 2009-04-01 | 2010-10-21 | Kulicke And Soffa Industries, Inc. | Conductive bumps, wire loops, and methods of forming the same |
US9455544B2 (en) | 2010-08-10 | 2016-09-27 | Kulicke And Soffa Industries, Inc. | Wire loops, methods of forming wire loops, and related processes |
USD771168S1 (en) | 2014-10-31 | 2016-11-08 | Coorstek, Inc. | Wire bonding ceramic capillary |
USD797171S1 (en) | 2015-02-03 | 2017-09-12 | Coorstek, Inc. | Ceramic bonding tool with textured tip |
USD797172S1 (en) | 2015-02-03 | 2017-09-12 | Coorstek, Inc. | Ceramic bonding tool with textured tip |
USD797826S1 (en) | 2015-02-03 | 2017-09-19 | Coorstek, Inc. | Ceramic bonding tool with textured tip |
USD753739S1 (en) | 2015-04-17 | 2016-04-12 | Coorstek, Inc. | Wire bonding wedge tool |
USD868123S1 (en) | 2016-12-20 | 2019-11-26 | Coorstek, Inc. | Wire bonding wedge tool |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4437604A (en) * | 1982-03-15 | 1984-03-20 | Kulicke & Soffa Industries, Inc. | Method of making fine wire interconnections |
US4582767A (en) | 1984-03-13 | 1986-04-15 | Sanyo Electric Co., Ltd. | Lead storage battery |
JPH02250328A (ja) * | 1989-03-24 | 1990-10-08 | Toshiba Corp | ワイヤボンダ、ワイヤボンダを用いたバンプ形成方法 |
JPH05275428A (ja) * | 1991-03-20 | 1993-10-22 | Fujitsu Ltd | バンプの形成方法 |
EP0570590B1 (en) | 1991-12-06 | 1997-03-26 | Yuasa Corporation | Thin battery and monolithic thin battery |
JPH05235002A (ja) * | 1992-02-24 | 1993-09-10 | Matsushita Electric Ind Co Ltd | バンプ形成方法 |
US5432017A (en) | 1992-09-14 | 1995-07-11 | Motorola, Inc. | Battery pack and method of forming same |
JPH06104263A (ja) * | 1992-09-22 | 1994-04-15 | Toshiba Corp | バンプ形成用ツ−ルおよびバンプ形成方法 |
US5485949A (en) * | 1993-04-30 | 1996-01-23 | Matsushita Electric Industrial Co., Ltd. | Capillary for a wire bonding apparatus and a method for forming an electric connection bump using the capillary |
US5559054A (en) * | 1994-12-23 | 1996-09-24 | Motorola, Inc. | Method for ball bumping a semiconductor device |
JPH09129645A (ja) * | 1995-10-30 | 1997-05-16 | Sumitomo Metal Mining Co Ltd | バンプ電極形成方法 |
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1998
- 1998-08-07 IT IT98VA000019 patent/IT1305646B1/it active
-
1999
- 1999-08-05 US US09/368,560 patent/US6260753B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ITVA980019A0 (it) | 1998-08-07 |
ITVA980019A1 (it) | 2000-02-07 |
US6260753B1 (en) | 2001-07-17 |
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