IT1230028B - Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenuti - Google Patents

Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenuti

Info

Publication number
IT1230028B
IT1230028B IT8806627A IT662788A IT1230028B IT 1230028 B IT1230028 B IT 1230028B IT 8806627 A IT8806627 A IT 8806627A IT 662788 A IT662788 A IT 662788A IT 1230028 B IT1230028 B IT 1230028B
Authority
IT
Italy
Prior art keywords
mos
semiconductive devices
gettering
treatment
manufacturing process
Prior art date
Application number
IT8806627A
Other languages
English (en)
Other versions
IT8806627A0 (it
Inventor
Magro Carmelo
Barbarino Eleonora
Pulvirenti Antonino
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8806627A priority Critical patent/IT1230028B/it
Publication of IT8806627A0 publication Critical patent/IT8806627A0/it
Priority to EP89203161A priority patent/EP0373723A1/en
Priority to JP1324913A priority patent/JPH02218136A/ja
Application granted granted Critical
Publication of IT1230028B publication Critical patent/IT1230028B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
IT8806627A 1988-12-16 1988-12-16 Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenuti IT1230028B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT8806627A IT1230028B (it) 1988-12-16 1988-12-16 Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenuti
EP89203161A EP0373723A1 (en) 1988-12-16 1989-12-12 Method for manufacturing a MOS semiconductor device making use of a "gettering" treatment with improved characteristics, and MOS semiconductor devices obtained thereby
JP1324913A JPH02218136A (ja) 1988-12-16 1989-12-16 Ｍｏｓ半導体デバイス製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8806627A IT1230028B (it) 1988-12-16 1988-12-16 Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenuti

Publications (2)

Publication Number Publication Date
IT8806627A0 IT8806627A0 (it) 1988-12-16
IT1230028B true IT1230028B (it) 1991-09-24

Family

ID=11121592

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8806627A IT1230028B (it) 1988-12-16 1988-12-16 Procedimento di fabbricazione di dispositivi semiconduttori mos avvalentesi di un trattamento "gettering" di migliorare caratteristiche, e dispositivi semiconduttori mos con esso ottenuti

Country Status (3)

Country Link
EP (1) EP0373723A1 (it)
JP (1) JPH02218136A (it)
IT (1) IT1230028B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897163A (ja) * 1994-07-28 1996-04-12 Hitachi Ltd 半導体ウエハの製造方法、半導体ウエハ、半導体集積回路装置の製造方法および半導体集積回路装置
JP3498431B2 (ja) * 1995-07-04 2004-02-16 株式会社デンソー 半導体装置の製造方法
JPH09120965A (ja) * 1995-10-25 1997-05-06 Toshiba Corp 半導体装置の製造方法
GB2368464B (en) * 1999-02-02 2002-10-16 Nec Corp Semiconductor device and fabrication process therefor
US6309929B1 (en) * 2000-09-22 2001-10-30 Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. Method of forming trench MOS device and termination structure
KR100944823B1 (ko) * 2005-07-14 2010-03-03 오토리브 디벨로프먼트 에이비 시트벨트장치
US8329563B2 (en) 2006-02-24 2012-12-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a gettering layer and manufacturing method therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3065499D1 (en) * 1979-04-11 1983-12-15 Mitsui Petrochemical Ind Process for producing spherical carrier particles for olefin polymerisation catalyst, catalyst comprising such carrier particles, and use of such catalyst in olefin polymerisation
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
DE3485808T2 (de) * 1983-02-14 1993-03-04 Memc Electronic Materials Materialien fuer halbleitersubstrate mit moeglichkeit zum gettern.
JPS61159741A (ja) * 1984-12-31 1986-07-19 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH02218136A (ja) 1990-08-30
EP0373723A1 (en) 1990-06-20
IT8806627A0 (it) 1988-12-16

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