IT1224650B - Circuito di pilotaggio a circuito integrato con ritardo di innesco prefissato per transistore mos di potenza. - Google Patents

Circuito di pilotaggio a circuito integrato con ritardo di innesco prefissato per transistore mos di potenza.

Info

Publication number
IT1224650B
IT1224650B IT8723181A IT2318187A IT1224650B IT 1224650 B IT1224650 B IT 1224650B IT 8723181 A IT8723181 A IT 8723181A IT 2318187 A IT2318187 A IT 2318187A IT 1224650 B IT1224650 B IT 1224650B
Authority
IT
Italy
Prior art keywords
mos transistor
power mos
integrated circuit
trigger delay
set trigger
Prior art date
Application number
IT8723181A
Other languages
English (en)
Other versions
IT8723181A0 (it
Inventor
Alberto Gola
Gianluigi Pessina
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8723181A priority Critical patent/IT1224650B/it
Publication of IT8723181A0 publication Critical patent/IT8723181A0/it
Priority to EP88120537A priority patent/EP0321795B1/en
Priority to DE3853666T priority patent/DE3853666T2/de
Priority to US07/287,050 priority patent/US4956570A/en
Priority to JP63320767A priority patent/JPH07108108B2/ja
Application granted granted Critical
Publication of IT1224650B publication Critical patent/IT1224650B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B19/00Driving, starting, stopping record carriers not specifically of filamentary or web form, or of supports therefor; Control thereof; Control of operating function ; Driving both disc and head
    • G11B19/20Driving; Starting; Stopping; Control thereof
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/042Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28Modifications for introducing a time delay before switching
    • H03K17/284Modifications for introducing a time delay before switching in field effect transistor switches
IT8723181A 1987-12-23 1987-12-23 Circuito di pilotaggio a circuito integrato con ritardo di innesco prefissato per transistore mos di potenza. IT1224650B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8723181A IT1224650B (it) 1987-12-23 1987-12-23 Circuito di pilotaggio a circuito integrato con ritardo di innesco prefissato per transistore mos di potenza.
EP88120537A EP0321795B1 (en) 1987-12-23 1988-12-08 Pilot circuit with integrated circuit with preset firing delay for MOS power transistors
DE3853666T DE3853666T2 (de) 1987-12-23 1988-12-08 Steuerungsschaltung mit integrierter Schaltung mit vorgegebener Zündverzögerung für MOS-Leistungstransistoren.
US07/287,050 US4956570A (en) 1987-12-23 1988-12-21 Pilot circuit with integrated circuit with preset firing delay for MOS power transistors
JP63320767A JPH07108108B2 (ja) 1987-12-23 1988-12-21 モータの短絡制御用mosfetのゲート制御回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8723181A IT1224650B (it) 1987-12-23 1987-12-23 Circuito di pilotaggio a circuito integrato con ritardo di innesco prefissato per transistore mos di potenza.

Publications (2)

Publication Number Publication Date
IT8723181A0 IT8723181A0 (it) 1987-12-23
IT1224650B true IT1224650B (it) 1990-10-18

Family

ID=11204623

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8723181A IT1224650B (it) 1987-12-23 1987-12-23 Circuito di pilotaggio a circuito integrato con ritardo di innesco prefissato per transistore mos di potenza.

Country Status (5)

Country Link
US (1) US4956570A (it)
EP (1) EP0321795B1 (it)
JP (1) JPH07108108B2 (it)
DE (1) DE3853666T2 (it)
IT (1) IT1224650B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4334186C2 (de) * 1993-10-07 1996-06-13 Telefunken Microelectron Integrierter Zeitschalter
US5528188A (en) * 1995-03-13 1996-06-18 International Business Machines Corporation Electrostatic discharge suppression circuit employing low-voltage triggering silicon-controlled rectifier

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862441A (en) * 1972-11-22 1975-01-21 Mitsubishi Electric Corp Mos-fet timing circuit
US3940634A (en) * 1975-02-14 1976-02-24 Rockwell International Corporation Solid state AC power relay
US4158150A (en) * 1978-01-10 1979-06-12 Amf Incorporated Solid state relay with zero crossover feature
FR2448805A1 (fr) * 1979-02-08 1980-09-05 Silicium Semiconducteur Ssc Circuit anti-parasites pour gradateur de lumiere
DE2942662A1 (de) * 1979-06-28 1981-05-07 Eberhard Dipl.-Phys. 7257 Ditzingen Pechhold Dimmerschaltung mit zeitverhalten
US4520418A (en) * 1983-04-25 1985-05-28 Susi Roger E Reset circuit
US4521705A (en) * 1983-07-20 1985-06-04 Honeywell Inc. Reliable field-effect transistor timer circuit
DE3615052A1 (de) * 1986-05-03 1987-11-05 Balluff Gebhard Feinmech Zweidraht-schalter

Also Published As

Publication number Publication date
IT8723181A0 (it) 1987-12-23
US4956570A (en) 1990-09-11
EP0321795B1 (en) 1995-04-26
JPH07108108B2 (ja) 1995-11-15
DE3853666T2 (de) 1995-10-05
EP0321795A3 (en) 1991-01-23
DE3853666D1 (de) 1995-06-01
EP0321795A2 (en) 1989-06-28
JPH01213860A (ja) 1989-08-28

Similar Documents

Publication Publication Date Title
DE3881304T2 (de) MOS-Transistor.
DE3873839T2 (de) Mos-leistungstransistoranordnung.
DE3861707D1 (de) Mos-transistoren fuer hohe spannungen.
IT9021891A0 (it) Modulo di potenza a transistor bipolare a porta isolato
DE3675211D1 (de) Antriebsvorrichtung fuer spritzgiessmaschine.
DE3786683D1 (de) Zeitverzoegerungsschaltung fuer halbleitervorrichtung.
DE3861873D1 (de) Steuerungseinrichtung fuer einen kaeltekreislauf.
DE3381367D1 (de) Mos-transistor.
IT1215279B (it) Dispositivo elettrico di potenza intelligente a circuito integrato monolitico.
DE69029907T2 (de) Leistungs-mosfet-transistorschaltung
IT8319169A0 (it) Circuito a transistori darlington.
IT1283164B1 (it) Circuito traslatore perfezionato per un circuito di pilotaggio di un transistore di potenza
IT1178000B (it) Circuito di comando per base di un transistor di potenza
ITMI912045A1 (it) Circuito di bootstrap per il pilotaggio di un transistore mos di potenza in configurazione high side driver.
DE3686180D1 (de) Vertikaler mos-transistor mit peripherer schaltung.
IT1228416B (it) Circuito di recupero di potenza.
DE3882773T2 (de) Leistungstransistortreiberschaltung.
IT1224644B (it) Circuito per il mantenimento in conduzione di un transistore mos in mancanza di tensione di alimentazione elettrica.
IT8125510A0 (it) Dispositivo a semiconduttore, in particolare transistor di potenza.
DE3684222D1 (de) Cmos-integrierte verzoegerungsschaltung.
IT8819588A0 (it) Potenza. dispositivo circuitale a basso assorbimento per comandare in accensione un transistore di
IT8422860A0 (it) Circuito di comando per un transistore di potenza.
DE3370245D1 (de) A mos transistor
IT1224650B (it) Circuito di pilotaggio a circuito integrato con ritardo di innesco prefissato per transistore mos di potenza.
IT8822533A0 (it) Per dispositivo circuitale, a ridotto numero di componenti, per l'accensione simultanea di una pluralita' di transistori di potenza

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227