IT1207543B - Procedimento per la fabbricazione di tiristori del tipo gate turn off - Google Patents

Procedimento per la fabbricazione di tiristori del tipo gate turn off

Info

Publication number
IT1207543B
IT1207543B IT8767212A IT6721287A IT1207543B IT 1207543 B IT1207543 B IT 1207543B IT 8767212 A IT8767212 A IT 8767212A IT 6721287 A IT6721287 A IT 6721287A IT 1207543 B IT1207543 B IT 1207543B
Authority
IT
Italy
Prior art keywords
thyristors
procedure
manufacture
type
gate turn
Prior art date
Application number
IT8767212A
Other languages
English (en)
Other versions
IT8767212A0 (it
Inventor
Suzuki Masanori
Nakagawa Tsutomi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of IT8767212A0 publication Critical patent/IT8767212A0/it
Application granted granted Critical
Publication of IT1207543B publication Critical patent/IT1207543B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744Gate-turn-off devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012Base regions of thyristors
    • H01L29/102Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
IT8767212A 1986-03-19 1987-03-18 Procedimento per la fabbricazione di tiristori del tipo gate turn off IT1207543B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61063494A JPS62219572A (ja) 1986-03-19 1986-03-19 ゲ−トタ−ンオフサイリスタの製造方法

Publications (2)

Publication Number Publication Date
IT8767212A0 IT8767212A0 (it) 1987-03-18
IT1207543B true IT1207543B (it) 1989-05-25

Family

ID=13230855

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8767212A IT1207543B (it) 1986-03-19 1987-03-18 Procedimento per la fabbricazione di tiristori del tipo gate turn off

Country Status (3)

Country Link
JP (1) JPS62219572A (it)
DE (1) DE3708651A1 (it)
IT (1) IT1207543B (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4309763C1 (de) * 1993-03-25 1994-05-05 Siemens Ag GTO-Thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135118B (en) * 1983-02-09 1986-10-08 Westinghouse Brake & Signal Thyristors

Also Published As

Publication number Publication date
DE3708651A1 (de) 1987-10-01
JPS62219572A (ja) 1987-09-26
IT8767212A0 (it) 1987-03-18

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329