IT1201852B - Amplificatore differenziale utilizzante transistori mos con canale dello stesso tipo - Google Patents

Amplificatore differenziale utilizzante transistori mos con canale dello stesso tipo

Info

Publication number
IT1201852B
IT1201852B IT83653/86A IT8365386A IT1201852B IT 1201852 B IT1201852 B IT 1201852B IT 83653/86 A IT83653/86 A IT 83653/86A IT 8365386 A IT8365386 A IT 8365386A IT 1201852 B IT1201852 B IT 1201852B
Authority
IT
Italy
Prior art keywords
channel
same type
differential amplifier
mos transistors
mos
Prior art date
Application number
IT83653/86A
Other languages
English (en)
Other versions
IT8683653A0 (it
Inventor
David Novosel
La Plaza Alejandro De
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT83653/86A priority Critical patent/IT1201852B/it
Publication of IT8683653A0 publication Critical patent/IT8683653A0/it
Priority to DE3734631A priority patent/DE3734631C2/de
Priority to JP62263651A priority patent/JPS63115407A/ja
Priority to US07/110,891 priority patent/US4801891A/en
Application granted granted Critical
Publication of IT1201852B publication Critical patent/IT1201852B/it

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT83653/86A 1986-10-21 1986-10-21 Amplificatore differenziale utilizzante transistori mos con canale dello stesso tipo IT1201852B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT83653/86A IT1201852B (it) 1986-10-21 1986-10-21 Amplificatore differenziale utilizzante transistori mos con canale dello stesso tipo
DE3734631A DE3734631C2 (de) 1986-10-21 1987-10-13 Differenzverstärker unter Verwendung von MOS-Transistoren einer Einkanal-Polarität
JP62263651A JPS63115407A (ja) 1986-10-21 1987-10-19 単一のチャンネル極性のmosトランジスターを利用する差動増幅器
US07/110,891 US4801891A (en) 1986-10-21 1987-10-21 Differential amplifier utilizing MOS transistors of a single channel polarity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT83653/86A IT1201852B (it) 1986-10-21 1986-10-21 Amplificatore differenziale utilizzante transistori mos con canale dello stesso tipo

Publications (2)

Publication Number Publication Date
IT8683653A0 IT8683653A0 (it) 1986-10-21
IT1201852B true IT1201852B (it) 1989-02-02

Family

ID=11323662

Family Applications (1)

Application Number Title Priority Date Filing Date
IT83653/86A IT1201852B (it) 1986-10-21 1986-10-21 Amplificatore differenziale utilizzante transistori mos con canale dello stesso tipo

Country Status (4)

Country Link
US (1) US4801891A (it)
JP (1) JPS63115407A (it)
DE (1) DE3734631C2 (it)
IT (1) IT1201852B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2586171B2 (ja) * 1990-03-26 1997-02-26 日本電気株式会社 演算増幅器
JP2944398B2 (ja) * 1993-07-05 1999-09-06 日本電気株式会社 Mos差動電圧電流変換回路
US8208312B1 (en) 2009-09-22 2012-06-26 Novocell Semiconductor, Inc. Non-volatile memory element integratable with standard CMOS circuitry
US8199590B1 (en) 2009-09-25 2012-06-12 Novocell Semiconductor, Inc. Multiple time programmable non-volatile memory element
US8134859B1 (en) 2009-09-25 2012-03-13 Novocell Semiconductor, Inc. Method of sensing a programmable non-volatile memory element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213098A (en) * 1979-02-09 1980-07-15 Bell Telephone Laboratories, Incorporated Semiconductor differential amplifier having feedback bias control for stabilization
US4760286A (en) * 1987-07-20 1988-07-26 Motorola, Inc. Comparator with input offset current elimination

Also Published As

Publication number Publication date
DE3734631C2 (de) 1996-11-28
US4801891A (en) 1989-01-31
JPS63115407A (ja) 1988-05-20
IT8683653A0 (it) 1986-10-21
DE3734631A1 (de) 1988-04-28

Similar Documents

Publication Publication Date Title
GB2071910B (en) Fabrication of complementary bipolar transistors with cmos devices with polysilicon gates
IT1110124B (it) Trasnistore a effetto di campo "mis" con canale di breve lunghezza
FI853622A0 (fi) Diarylacetylener, deras framstaellning och anvaendning.
DK119285A (da) Benzothiazol- og benzothiophenderivater
DE3788525D1 (de) Feldeffekttransistoranordnungen.
FI860483A0 (fi) Komposition och foerfarande foer flotation av stenkol ur raostenkol.
FI840246A7 (fi) Foerfarande och anordning vid formning av pappersbana.
FI842711A0 (fi) Anordning i en pappersmaskin vid oeverfoering och styrning av banans aendfoeringsband.
DE3854677D1 (de) Komplementäre Feldeffekttransistorstruktur.
DE3751098D1 (de) Feldeffekttransistor.
IT1154298B (it) Perfezionemento nei transistori di potenza mos
FI853624L (fi) 1-substituerade tetralinderivat, deras framstaellning och anvaendning.
GB2020484B (en) Integrated gate field effect transistors having closed gate structure with controlled avalanche characteristics
FI854219L (fi) Adsorberande medel foer lipoproteiner till anvaendning vid extrakorporeal circulationsbehandling och foerfarande foer framstaellning av detsamma.
IT8322738A0 (it) Amplificatore differenziale costituito da transistor ad effetto di campo del tipo metallo-isolante-semiconduttore.
IT1132331B (it) Transistori
IT1201852B (it) Amplificatore differenziale utilizzante transistori mos con canale dello stesso tipo
ES2016262B3 (es) Circuito amplificador con transistor de efecto de campo.
GB2136652B (en) Differential amplifier with bipolar transistors
FI834115A0 (fi) Ny mikro-organism hoerande till streptococcus termophilus-genus och komposition innehaollande dennamikroorganism
DE3780895D1 (de) Komplementaerer feldeffekt-transistor mit isoliertem gate.
SE7811747L (sv) Differentialforsterkare med mos-felteffekttransistorer
IT1131710B (it) Divisore di tensione utilizzante transistori mos
FI862453A0 (fi) Exploderande komposition och foerfarande.
IT8220564A0 (it) Amplificatore dotato di mezzi per eliminare i transitori della tensione continua all'uscita dello stesso.

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030