IT1163732B - Dispositivi di memoria non volatile con struttura isolante a banda vuota graduata o a gradini - Google Patents

Dispositivi di memoria non volatile con struttura isolante a banda vuota graduata o a gradini

Info

Publication number
IT1163732B
IT1163732B IT7927153A IT2715379A IT1163732B IT 1163732 B IT1163732 B IT 1163732B IT 7927153 A IT7927153 A IT 7927153A IT 2715379 A IT2715379 A IT 2715379A IT 1163732 B IT1163732 B IT 1163732B
Authority
IT
Italy
Prior art keywords
graduated
steps
volatile memory
memory devices
empty structure
Prior art date
Application number
IT7927153A
Other languages
English (en)
Other versions
IT7927153A0 (it
Inventor
Roger Francois Dekeersmaecker
Donelli Joseph Dimaria
Donald Reeder Young
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7927153A0 publication Critical patent/IT7927153A0/it
Application granted granted Critical
Publication of IT1163732B publication Critical patent/IT1163732B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/082—Ion implantation FETs/COMs
IT7927153A 1979-02-15 1979-11-09 Dispositivi di memoria non volatile con struttura isolante a banda vuota graduata o a gradini IT1163732B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/012,279 US4217601A (en) 1979-02-15 1979-02-15 Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure

Publications (2)

Publication Number Publication Date
IT7927153A0 IT7927153A0 (it) 1979-11-09
IT1163732B true IT1163732B (it) 1987-04-08

Family

ID=21754212

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7927153A IT1163732B (it) 1979-02-15 1979-11-09 Dispositivi di memoria non volatile con struttura isolante a banda vuota graduata o a gradini

Country Status (6)

Country Link
US (1) US4217601A (it)
EP (1) EP0016246B1 (it)
JP (1) JPS55111175A (it)
CA (1) CA1133133A (it)
DE (1) DE2964551D1 (it)
IT (1) IT1163732B (it)

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US4104675A (en) * 1977-06-21 1978-08-01 International Business Machines Corporation Moderate field hole and electron injection from one interface of MIM or MIS structures
JPS5642375A (en) * 1979-08-31 1981-04-20 Fujitsu Ltd Semiconductor nonvolatile memory
US4334347A (en) * 1979-10-19 1982-06-15 Rca Corporation Method of forming an improved gate member for a gate injected floating gate memory device
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
US4399522A (en) * 1980-09-30 1983-08-16 International Business Machines Corporation Non-volatile static RAM cell with enhanced conduction insulators
US4380057A (en) * 1980-10-27 1983-04-12 International Business Machines Corporation Electrically alterable double dense memory
US4472726A (en) * 1981-05-06 1984-09-18 The United States Of America As Represented By The Secretary Of The Air Force Two carrier dual injector apparatus
CA1188419A (en) * 1981-12-14 1985-06-04 Yung-Chau Yen Nonvolatile multilayer gate semiconductor memory device
US4471471A (en) * 1981-12-31 1984-09-11 International Business Machines Corporation Non-volatile RAM device
US4535349A (en) * 1981-12-31 1985-08-13 International Business Machines Corporation Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing
US4575923A (en) * 1983-04-06 1986-03-18 North American Philips Corporation Method of manufacturing a high resistance layer having a low temperature coefficient of resistance and semiconductor device having such high resistance layer
JPH0770690B2 (ja) * 1986-01-14 1995-07-31 オリンパス光学工業株式会社 三次元トンネルメモリ装置
US4752812A (en) * 1987-01-12 1988-06-21 International Business Machines Corporation Permeable-base transistor
GB2213987A (en) * 1987-12-18 1989-08-23 Philips Electronic Associated MIM devices and liquid crystal display devices incorporating such devices
EP0655788B1 (en) * 1993-11-29 1998-01-21 STMicroelectronics S.A. A volatile memory cell
EP0749638B1 (en) * 1994-12-22 1999-06-16 Koninklijke Philips Electronics N.V. Semiconductor memory devices and methods of producing such
US5960302A (en) * 1996-12-31 1999-09-28 Lucent Technologies, Inc. Method of making a dielectric for an integrated circuit
KR100265692B1 (ko) * 1997-07-03 2000-09-15 윤덕용 에이에프엠을이용한비휘발성메모리소자와해당메모리소자의운영방법
US6593195B1 (en) * 1999-02-01 2003-07-15 Agere Systems Inc Stable memory device that utilizes ion positioning to control state of the memory device
US6953730B2 (en) 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US7132336B1 (en) * 2002-02-12 2006-11-07 Lsi Logic Corporation Method and apparatus for forming a memory structure having an electron affinity region
US7154140B2 (en) 2002-06-21 2006-12-26 Micron Technology, Inc. Write once read only memory with large work function floating gates
US7193893B2 (en) 2002-06-21 2007-03-20 Micron Technology, Inc. Write once read only memory employing floating gates
US6888739B2 (en) * 2002-06-21 2005-05-03 Micron Technology Inc. Nanocrystal write once read only memory for archival storage
US6996009B2 (en) 2002-06-21 2006-02-07 Micron Technology, Inc. NOR flash memory cell with high storage density
US6970370B2 (en) * 2002-06-21 2005-11-29 Micron Technology, Inc. Ferroelectric write once read only memory for archival storage
US6804136B2 (en) * 2002-06-21 2004-10-12 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
JP2004040064A (ja) * 2002-07-01 2004-02-05 Yutaka Hayashi 不揮発性メモリとその製造方法
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US7221017B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
US7847344B2 (en) * 2002-07-08 2010-12-07 Micron Technology, Inc. Memory utilizing oxide-nitride nanolaminates
US6818936B2 (en) * 2002-11-05 2004-11-16 Taiwan Semiconductor Manufacturing Company Scaled EEPROM cell by metal-insulator-metal (MIM) coupling
US6797567B2 (en) * 2002-12-24 2004-09-28 Macronix International Co., Ltd. High-K tunneling dielectric for read only memory device and fabrication method thereof
US20050242387A1 (en) * 2004-04-29 2005-11-03 Micron Technology, Inc. Flash memory device having a graded composition, high dielectric constant gate insulator
KR100606927B1 (ko) 2004-05-06 2006-08-01 동부일렉트로닉스 주식회사 비휘발성 메모리 및 그 구동방법
US7315474B2 (en) 2005-01-03 2008-01-01 Macronix International Co., Ltd Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US7642585B2 (en) 2005-01-03 2010-01-05 Macronix International Co., Ltd. Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US8264028B2 (en) 2005-01-03 2012-09-11 Macronix International Co., Ltd. Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US7473589B2 (en) 2005-12-09 2009-01-06 Macronix International Co., Ltd. Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
US7709334B2 (en) 2005-12-09 2010-05-04 Macronix International Co., Ltd. Stacked non-volatile memory device and methods for fabricating the same
US8482052B2 (en) 2005-01-03 2013-07-09 Macronix International Co., Ltd. Silicon on insulator and thin film transistor bandgap engineered split gate memory
US7612403B2 (en) 2005-05-17 2009-11-03 Micron Technology, Inc. Low power non-volatile memory and gate stack
US7636257B2 (en) 2005-06-10 2009-12-22 Macronix International Co., Ltd. Methods of operating p-channel non-volatile memory devices
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US8772858B2 (en) 2006-10-11 2014-07-08 Macronix International Co., Ltd. Vertical channel memory and manufacturing method thereof and operating method using the same
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US20080258204A1 (en) * 2007-04-20 2008-10-23 Macronix International Co., Ltd. Memory structure and operating method thereof
US7838923B2 (en) 2007-08-09 2010-11-23 Macronix International Co., Ltd. Lateral pocket implant charge trapping devices
US7816727B2 (en) 2007-08-27 2010-10-19 Macronix International Co., Ltd. High-κ capped blocking dielectric bandgap engineered SONOS and MONOS
US7848148B2 (en) 2007-10-18 2010-12-07 Macronix International Co., Ltd. One-transistor cell semiconductor on insulator random access memory
US7643349B2 (en) 2007-10-18 2010-01-05 Macronix International Co., Ltd. Efficient erase algorithm for SONOS-type NAND flash
US8068370B2 (en) 2008-04-18 2011-11-29 Macronix International Co., Ltd. Floating gate memory device with interpoly charge trapping structure
US8081516B2 (en) * 2009-01-02 2011-12-20 Macronix International Co., Ltd. Method and apparatus to suppress fringing field interference of charge trapping NAND memory
US8861273B2 (en) 2009-04-21 2014-10-14 Macronix International Co., Ltd. Bandgap engineered charge trapping memory in two-transistor nor architecture
US20110039034A1 (en) * 2009-08-11 2011-02-17 Helen Maynard Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material
US8987098B2 (en) 2012-06-19 2015-03-24 Macronix International Co., Ltd. Damascene word line
US9379126B2 (en) 2013-03-14 2016-06-28 Macronix International Co., Ltd. Damascene conductor for a 3D device
US9099538B2 (en) 2013-09-17 2015-08-04 Macronix International Co., Ltd. Conductor with a plurality of vertical extensions for a 3D device
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
CN107768448B (zh) * 2017-11-06 2020-01-14 安阳师范学院 一种具有双向阶梯能带存储氧化物的电荷俘获型存储器件及其制备方法

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DE2720715A1 (de) * 1977-05-07 1978-11-09 Itt Ind Gmbh Deutsche Mnos-speichertransistor
US4104675A (en) * 1977-06-21 1978-08-01 International Business Machines Corporation Moderate field hole and electron injection from one interface of MIM or MIS structures
FR2395606A1 (fr) * 1978-02-08 1979-01-19 Ibm Structure de capacite amelioree a champ eleve utilisant une region de piegeage de porteurs

Also Published As

Publication number Publication date
JPS5751271B2 (it) 1982-11-01
DE2964551D1 (en) 1983-02-24
EP0016246A1 (fr) 1980-10-01
CA1133133A (en) 1982-10-05
JPS55111175A (en) 1980-08-27
IT7927153A0 (it) 1979-11-09
EP0016246B1 (fr) 1983-01-19
US4217601A (en) 1980-08-12

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Effective date: 19931119