IT1160100B - Apparecchiatura per depositare uno strato epitassiale di materiale semiconduttore monocristallino - Google Patents

Apparecchiatura per depositare uno strato epitassiale di materiale semiconduttore monocristallino

Info

Publication number
IT1160100B
IT1160100B IT30247/78A IT3024778A IT1160100B IT 1160100 B IT1160100 B IT 1160100B IT 30247/78 A IT30247/78 A IT 30247/78A IT 3024778 A IT3024778 A IT 3024778A IT 1160100 B IT1160100 B IT 1160100B
Authority
IT
Italy
Prior art keywords
depositing
equipment
semiconductor material
epitaxial layer
monocrystalline semiconductor
Prior art date
Application number
IT30247/78A
Other languages
English (en)
Italian (it)
Other versions
IT7830247A0 (it
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7830247A0 publication Critical patent/IT7830247A0/it
Application granted granted Critical
Publication of IT1160100B publication Critical patent/IT1160100B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
IT30247/78A 1977-12-08 1978-11-28 Apparecchiatura per depositare uno strato epitassiale di materiale semiconduttore monocristallino IT1160100B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/858,486 US4151420A (en) 1977-12-08 1977-12-08 Apparatus for the formation of epitaxial layers doped with conductivity-determining impurities by ion deposition

Publications (2)

Publication Number Publication Date
IT7830247A0 IT7830247A0 (it) 1978-11-28
IT1160100B true IT1160100B (it) 1987-03-04

Family

ID=25328425

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30247/78A IT1160100B (it) 1977-12-08 1978-11-28 Apparecchiatura per depositare uno strato epitassiale di materiale semiconduttore monocristallino

Country Status (5)

Country Link
US (1) US4151420A (en, 2012)
EP (1) EP0002472B1 (en, 2012)
JP (1) JPS5480673A (en, 2012)
DE (1) DE2862399D1 (en, 2012)
IT (1) IT1160100B (en, 2012)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3070390D1 (en) * 1979-11-13 1985-05-02 Ibm Process for the formation of the emitter zone of a transistor
US4451738A (en) * 1980-07-28 1984-05-29 National Research Development Corporation Microcircuit fabrication
DE3121666A1 (de) * 1981-05-30 1982-12-16 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und einrichtung zur gegenseitigen ausrichtung von objekten bei roentgenstrahl- und korpuskularstrahl-belichtungsvorgaengen
JPS58142783U (ja) * 1982-03-15 1983-09-26 シャープ株式会社 自動販売機
JPS61107643A (ja) * 1984-10-30 1986-05-26 Hitachi Ltd 蒸発炉付イオン源
JPS62195889U (en, 2012) * 1986-06-02 1987-12-12
JP2929291B2 (ja) * 1986-12-04 1999-08-03 セイコーインスツルメンツ株式会社 絶縁ゲート電界効果トランジスタの製造方法
US4798959A (en) * 1987-01-02 1989-01-17 Marks Alvin M Super submicron electron beam writer
US4822466A (en) * 1987-06-25 1989-04-18 University Of Houston - University Park Chemically bonded diamond films and method for producing same
JPH0337579U (en, 2012) * 1989-08-22 1991-04-11
US5093572A (en) * 1989-11-02 1992-03-03 Mitsubishi Denki Kabushiki Kaisha Scanning electron microscope for observation of cross section and method of observing cross section employing the same
GB9021629D0 (en) * 1990-10-04 1990-11-21 Superion Ltd Apparatus for and method of producing ion beams
JPH04123489U (ja) * 1991-04-26 1992-11-09 国立環境研究所長 箱型据置式電力消費装置
US5206516A (en) * 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
US5196706A (en) * 1991-07-30 1993-03-23 International Business Machines Corporation Extractor and deceleration lens for ion beam deposition apparatus
US5315118A (en) * 1993-04-15 1994-05-24 High Voltage Engineering Europa B.V. Dual ion injector for tandem accelerators
US5554853A (en) * 1995-03-10 1996-09-10 Krytek Corporation Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法
GB0127251D0 (en) * 2001-11-13 2002-01-02 Nordiko Ltd Apparatus
JP2009081032A (ja) * 2007-09-26 2009-04-16 Axcelis Technologies Inc リボン形ビームを用いたイオン注入クラスターツール

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams
US3734769A (en) * 1970-08-06 1973-05-22 T Hirschfeld Method of forming microelements
JPS48100075A (en, 2012) * 1972-03-29 1973-12-18
US3865625A (en) * 1972-10-13 1975-02-11 Bell Telephone Labor Inc Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides
JPS5057172U (en, 2012) * 1973-09-26 1975-05-29
JPS5063883A (en, 2012) * 1973-10-08 1975-05-30
US3999097A (en) * 1975-06-30 1976-12-21 International Business Machines Corporation Ion implantation apparatus utilizing multiple aperture source plate and single aperture accel-decel system

Also Published As

Publication number Publication date
EP0002472A3 (en) 1979-09-05
IT7830247A0 (it) 1978-11-28
JPS5738184B2 (en, 2012) 1982-08-13
US4151420A (en) 1979-04-24
EP0002472B1 (de) 1984-05-02
DE2862399D1 (en) 1984-06-07
JPS5480673A (en) 1979-06-27
EP0002472A2 (de) 1979-06-27

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