IT1150062B - Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione - Google Patents

Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione

Info

Publication number
IT1150062B
IT1150062B IT26063/80A IT2606380A IT1150062B IT 1150062 B IT1150062 B IT 1150062B IT 26063/80 A IT26063/80 A IT 26063/80A IT 2606380 A IT2606380 A IT 2606380A IT 1150062 B IT1150062 B IT 1150062B
Authority
IT
Italy
Prior art keywords
power supply
integrated circuit
supply voltage
low power
high integration
Prior art date
Application number
IT26063/80A
Other languages
English (en)
Italian (it)
Other versions
IT8026063A0 (it
Inventor
Livio Baldi
Original Assignee
Ates Componenti Elettron
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron, Sgs Microelettronica Spa filed Critical Ates Componenti Elettron
Priority to IT26063/80A priority Critical patent/IT1150062B/it
Publication of IT8026063A0 publication Critical patent/IT8026063A0/it
Priority to NLAANVRAGE8105192,A priority patent/NL189789C/nl
Priority to DE19813145592 priority patent/DE3145592A1/de
Priority to GB8134626A priority patent/GB2090701B/en
Priority to JP56183933A priority patent/JPS57112076A/ja
Priority to FR8121665A priority patent/FR2494501B1/fr
Application granted granted Critical
Publication of IT1150062B publication Critical patent/IT1150062B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Protection Of Static Devices (AREA)
IT26063/80A 1980-11-19 1980-11-19 Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione IT1150062B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT26063/80A IT1150062B (it) 1980-11-19 1980-11-19 Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione
NLAANVRAGE8105192,A NL189789C (nl) 1980-11-19 1981-11-16 Geintegreerd mos-circuit met beschermingsinrichting tegen overmatige ingangsspanningen.
DE19813145592 DE3145592A1 (de) 1980-11-19 1981-11-17 "eingangsseitiger schutz fuer integrierte mos-schaltungen mit niedriger versorgungsspannung und hoher integrationsdichte"
GB8134626A GB2090701B (en) 1980-11-19 1981-11-17 Improvements in or relating to input protection for mos integrated circuits
JP56183933A JPS57112076A (en) 1980-11-19 1981-11-18 Mos integrated circuit
FR8121665A FR2494501B1 (fr) 1980-11-19 1981-11-19 Protection d'entree pour circuit integre de type mos a basse tension d'alimentation et a haute densite d'integration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT26063/80A IT1150062B (it) 1980-11-19 1980-11-19 Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione

Publications (2)

Publication Number Publication Date
IT8026063A0 IT8026063A0 (it) 1980-11-19
IT1150062B true IT1150062B (it) 1986-12-10

Family

ID=11218547

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26063/80A IT1150062B (it) 1980-11-19 1980-11-19 Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione

Country Status (6)

Country Link
JP (1) JPS57112076A (nl)
DE (1) DE3145592A1 (nl)
FR (1) FR2494501B1 (nl)
GB (1) GB2090701B (nl)
IT (1) IT1150062B (nl)
NL (1) NL189789C (nl)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
JPS5992557A (ja) * 1982-11-18 1984-05-28 Nec Corp 入力保護回路付半導体集積回路
JPS60128653A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路装置
DE3408285A1 (de) * 1984-03-07 1985-09-19 Telefunken electronic GmbH, 7100 Heilbronn Schutzanordnung fuer einen feldeffekttransistor
EP0157389B1 (en) * 1984-03-31 1991-06-26 Kabushiki Kaisha Toshiba Protection device for a mos transistor
JPS60207383A (ja) * 1984-03-31 1985-10-18 Toshiba Corp 半導体装置
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
FR2575333B1 (fr) * 1984-12-21 1987-01-23 Radiotechnique Compelec Dispositif de protection d'un circuit integre contre les decharges electrostatiques
IT1217298B (it) * 1985-05-30 1990-03-22 Sgs Thomson Microelectronics Dispositivo di protezione da scariche elettrostatiche,in particolare per circuiti integrati bipolari
IT1186227B (it) * 1985-12-03 1987-11-18 Sgs Microelettronica Spa Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos
DE3615049C2 (de) * 1986-05-03 1994-04-07 Bosch Gmbh Robert Integrierte Widerstandsanordnung mit Schutzelement gegen Verpolung und Über- bzw. Unterspannung
US5077591A (en) * 1986-09-30 1991-12-31 Texas Instruments Incorporated Electrostatic discharge protection for semiconductor input devices
US4739437A (en) * 1986-10-22 1988-04-19 Siemens-Pacesetter, Inc. Pacemaker output switch protection
JPS63198525A (ja) * 1987-02-12 1988-08-17 三菱電機株式会社 過電圧保護装置
US4875130A (en) * 1988-07-06 1989-10-17 National Semiconductor Corporation ESD low resistance input structure
US5189588A (en) * 1989-03-15 1993-02-23 Matsushita Electric Industrial Co., Ltd. Surge protection apparatus
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
US5139959A (en) * 1992-01-21 1992-08-18 Motorola, Inc. Method for forming bipolar transistor input protection
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
US5272097A (en) * 1992-04-07 1993-12-21 Philip Shiota Method for fabricating diodes for electrostatic discharge protection and voltage references
US5428498A (en) * 1992-09-28 1995-06-27 Xerox Corporation Office environment level electrostatic discharge protection
FR2716294B1 (fr) * 1994-01-28 1996-05-31 Sgs Thomson Microelectronics Procédé de réalisation d'un transistor bipolaire pour protection d'un circuit intégré contre les décharges électrostatiques.
US5545910A (en) * 1994-04-13 1996-08-13 Winbond Electronics Corp. ESD proctection device
EP0688054A3 (en) * 1994-06-13 1996-06-05 Symbios Logic Inc Protection against electrostatic discharges for a semiconductor integrated circuit device
EP0851552A1 (en) * 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Protection ciruit for an electric supply line in a semiconductor integrated device
DE102009015839B4 (de) * 2009-04-01 2019-07-11 Austriamicrosystems Ag Integrierte ESD-Schutzschaltung
JP2013172085A (ja) * 2012-02-22 2013-09-02 Asahi Kasei Electronics Co Ltd 半導体装置の製造方法及び半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1179388A (en) * 1967-11-02 1970-01-28 Ncr Co Electrical Protective Circuit for Metal-Oxide-Semiconductor Transistors
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
JPS5410836B1 (nl) * 1970-06-26 1979-05-10
JPS526470B1 (nl) * 1971-04-20 1977-02-22
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.

Also Published As

Publication number Publication date
FR2494501A1 (fr) 1982-05-21
NL189789C (nl) 1993-07-16
IT8026063A0 (it) 1980-11-19
DE3145592C2 (nl) 1993-04-29
FR2494501B1 (fr) 1985-10-25
DE3145592A1 (de) 1982-07-15
JPS57112076A (en) 1982-07-12
GB2090701A (en) 1982-07-14
GB2090701B (en) 1984-09-26
NL189789B (nl) 1993-02-16
NL8105192A (nl) 1982-06-16

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971129