IT1149289B - Tunnel epitassiali - Google Patents

Tunnel epitassiali

Info

Publication number
IT1149289B
IT1149289B IT19614/80A IT1961480A IT1149289B IT 1149289 B IT1149289 B IT 1149289B IT 19614/80 A IT19614/80 A IT 19614/80A IT 1961480 A IT1961480 A IT 1961480A IT 1149289 B IT1149289 B IT 1149289B
Authority
IT
Italy
Prior art keywords
tunnels
epitaxial
epitaxial tunnels
Prior art date
Application number
IT19614/80A
Other languages
English (en)
Other versions
IT8019614A0 (it
Inventor
John Carter Marinace
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT8019614A0 publication Critical patent/IT8019614A0/it
Application granted granted Critical
Publication of IT1149289B publication Critical patent/IT1149289B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D15/00—Component parts of recorders for measuring arrangements not specially adapted for a specific variable
    • G01D15/16—Recording elements transferring recording material, e.g. ink, to the recording surface
    • G01D15/18—Nozzles emitting recording material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
IT19614/80A 1979-03-05 1980-02-01 Tunnel epitassiali IT1149289B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/017,230 US4178197A (en) 1979-03-05 1979-03-05 Formation of epitaxial tunnels utilizing oriented growth techniques

Publications (2)

Publication Number Publication Date
IT8019614A0 IT8019614A0 (it) 1980-02-01
IT1149289B true IT1149289B (it) 1986-12-03

Family

ID=21781460

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19614/80A IT1149289B (it) 1979-03-05 1980-02-01 Tunnel epitassiali

Country Status (6)

Country Link
US (1) US4178197A (it)
EP (1) EP0016910B1 (it)
JP (1) JPS55118629A (it)
CA (1) CA1130474A (it)
DE (1) DE3062651D1 (it)
IT (1) IT1149289B (it)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0192280A3 (en) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
US4485551A (en) * 1981-03-02 1984-12-04 Rockwell International Corporation NPN Type lateral transistor separated from substrate by O.D.E. for minimal interference therefrom and method for producing same
GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
US4806996A (en) * 1986-04-10 1989-02-21 American Telephone And Telegraph Company, At&T Bell Laboratories Dislocation-free epitaxial layer on a lattice-mismatched porous or otherwise submicron patterned single crystal substrate
US4862232A (en) * 1986-09-22 1989-08-29 General Motors Corporation Transistor structure for high temperature logic circuits with insulation around source and drain regions
US4714685A (en) * 1986-12-08 1987-12-22 General Motors Corporation Method of fabricating self-aligned silicon-on-insulator like devices
US4797718A (en) * 1986-12-08 1989-01-10 Delco Electronics Corporation Self-aligned silicon MOS device
US4749441A (en) * 1986-12-11 1988-06-07 General Motors Corporation Semiconductor mushroom structure fabrication
EP0281335A3 (en) * 1987-02-28 1988-11-09 Canon Kabushiki Kaisha Process for producing a semiconductor article
US4760036A (en) * 1987-06-15 1988-07-26 Delco Electronics Corporation Process for growing silicon-on-insulator wafers using lateral epitaxial growth with seed window oxidation
US4762382A (en) * 1987-06-29 1988-08-09 Honeywell Inc. Optical interconnect circuit for GaAs optoelectronics and Si VLSI/VHSIC
JP2746301B2 (ja) * 1988-10-20 1998-05-06 キヤノン株式会社 半導体整流素子
US4971928A (en) * 1990-01-16 1990-11-20 General Motors Corporation Method of making a light emitting semiconductor having a rear reflecting surface
DE4034000C1 (it) * 1990-10-25 1991-10-17 Siemens Ag, 8000 Muenchen, De
JPH05291307A (ja) * 1991-12-05 1993-11-05 Samsung Electron Co Ltd 化合物半導体装置及びその製造方法
JPH0817186B2 (ja) * 1992-03-18 1996-02-21 三星電子株式会社 電界効果トランジスタの製造方法
US5328559A (en) * 1992-09-08 1994-07-12 Ic Sensors, Inc. Groove width trimming
US5467415A (en) * 1994-04-22 1995-11-14 At&T Corp. Method for making polarization independent silica optical circuits
US6093330A (en) * 1997-06-02 2000-07-25 Cornell Research Foundation, Inc. Microfabrication process for enclosed microstructures
US6180536B1 (en) 1998-06-04 2001-01-30 Cornell Research Foundation, Inc. Suspended moving channels and channel actuators for microfluidic applications and method for making
JP3399841B2 (ja) * 1998-06-25 2003-04-21 科学技術振興事業団 光導波路付き探針及びその製造方法
NL2003357C2 (en) * 2009-08-14 2011-02-15 Univ Twente Method for manufacturing a single crystal nano-wire.
JP6745361B2 (ja) * 2016-05-20 2020-08-26 ルミレッズ リミテッド ライアビリティ カンパニー 発光デバイスのｐ型層を形成する方法
EP3459117B1 (en) 2016-05-20 2021-04-14 Lumileds LLC Method of forming a p-type layer for a light emitting device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits
US3621346A (en) * 1970-01-28 1971-11-16 Ibm Process for forming semiconductor devices with polycrystalline diffusion pathways and devices formed thereby
DE2120388A1 (de) * 1970-04-28 1971-12-16 Agency Ind Science Techn Verbindungshalbleitervorrichtung
US3884733A (en) * 1971-08-13 1975-05-20 Texas Instruments Inc Dielectric isolation process
JPS5338954B2 (it) * 1972-07-26 1978-10-18
JPS4934391A (it) * 1972-07-26 1974-03-29
US3855690A (en) * 1972-12-26 1974-12-24 Westinghouse Electric Corp Application of facet-growth to self-aligned schottky barrier gate field effect transistors
US3984173A (en) * 1974-04-08 1976-10-05 Texas Instruments Incorporated Waveguides for integrated optics
JPS5342679B2 (it) * 1975-01-08 1978-11-14
JPS5814644B2 (ja) * 1975-05-14 1983-03-22 松下電器産業株式会社 ヒカリデンソウロノセイゾウホウホウ
JPS5244173A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Method of flat etching of silicon substrate

Also Published As

Publication number Publication date
EP0016910A1 (fr) 1980-10-15
IT8019614A0 (it) 1980-02-01
EP0016910B1 (fr) 1983-04-13
JPS639369B2 (it) 1988-02-29
US4178197A (en) 1979-12-11
JPS55118629A (en) 1980-09-11
CA1130474A (en) 1982-08-24
DE3062651D1 (en) 1983-05-19

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