IT1093920B - Matrice di commutazione di trasmissione di segnali bilaterale - Google Patents

Matrice di commutazione di trasmissione di segnali bilaterale

Info

Publication number
IT1093920B
IT1093920B IT21620/78A IT2162078A IT1093920B IT 1093920 B IT1093920 B IT 1093920B IT 21620/78 A IT21620/78 A IT 21620/78A IT 2162078 A IT2162078 A IT 2162078A IT 1093920 B IT1093920 B IT 1093920B
Authority
IT
Italy
Prior art keywords
signal transmission
transmission switching
switching die
bilateral signal
bilateral
Prior art date
Application number
IT21620/78A
Other languages
English (en)
Italian (it)
Other versions
IT7821620A0 (it
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT7821620A0 publication Critical patent/IT7821620A0/it
Application granted granted Critical
Publication of IT1093920B publication Critical patent/IT1093920B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6221—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors combined with selecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1022—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H03K17/665—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only
    • H03K17/666—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor
    • H03K17/668—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/68—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching ac currents or voltages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04Q—SELECTING
    • H04Q3/00—Selecting arrangements
    • H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electronic Switches (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT21620/78A 1977-03-28 1978-03-24 Matrice di commutazione di trasmissione di segnali bilaterale IT1093920B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/781,790 US4125855A (en) 1977-03-28 1977-03-28 Integrated semiconductor crosspoint arrangement

Publications (2)

Publication Number Publication Date
IT7821620A0 IT7821620A0 (it) 1978-03-24
IT1093920B true IT1093920B (it) 1985-07-26

Family

ID=25123949

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21620/78A IT1093920B (it) 1977-03-28 1978-03-24 Matrice di commutazione di trasmissione di segnali bilaterale

Country Status (12)

Country Link
US (1) US4125855A (nl)
JP (1) JPS53120390A (nl)
BE (1) BE865243A (nl)
CA (1) CA1095182A (nl)
CH (1) CH626488A5 (nl)
DE (1) DE2812784A1 (nl)
ES (1) ES468296A1 (nl)
FR (1) FR2386224A1 (nl)
GB (1) GB1588695A (nl)
IT (1) IT1093920B (nl)
NL (1) NL7803206A (nl)
SE (1) SE439409B (nl)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2932587C2 (de) * 1979-08-10 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Breitbandkoppelanordnung mit einer Matrix von Koppelpunktschaltkreisen in ECL-Technik
JPS56148179A (en) * 1980-04-21 1981-11-17 Fujitsu Ltd Converting method of ac-dc
US4402008A (en) * 1981-08-27 1983-08-30 Bell Telephone Laboratories, Incorporated Wideband switching architecture
JPS58168255A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置
DE3435571A1 (de) * 1984-09-27 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte bipolare darlington-schaltung
JP7042719B2 (ja) * 2018-06-21 2022-03-28 日揮グローバル株式会社 硫酸ニッケル化合物の製造方法
CN109450434A (zh) * 2018-12-14 2019-03-08 东莞博力威电池有限公司 一种双通道模拟选择电路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US3024448A (en) * 1956-09-20 1962-03-06 Int Standard Electric Corp Static electric switches
US3564443A (en) * 1966-06-29 1971-02-16 Hitachi Ltd Semiconductor integrated circuit device containing lateral and planar transistor in a semiconductor layer
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
BE758719A (fr) * 1969-11-11 1971-05-10 Philips Nv Dispositif semiconducteur
US3697962A (en) * 1970-11-27 1972-10-10 Ibm Two device monolithic bipolar memory array
DE2123395C3 (de) * 1971-05-12 1983-03-10 TE KA DE Felten & Guilleaume Fernmeldeanlagen GmbH, 8500 Nürnberg Koppelpunkt einer elektronischen Koppelfeldeinrichtung mit Feldeffekttransistoren
FR2144595B1 (nl) * 1971-07-07 1974-09-06 Radiotechnique Compelec
JPS4871892A (nl) * 1971-12-27 1973-09-28
US3786425A (en) * 1972-12-18 1974-01-15 Bell Telephone Labor Inc Integrated circuit switching network providing crosspoint gain
US3913125A (en) * 1973-06-11 1975-10-14 Gte Laboratories Inc Negative impedance converter
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US3945857A (en) * 1974-07-01 1976-03-23 Fairchild Camera And Instrument Corporation Method for fabricating double-diffused, lateral transistors

Also Published As

Publication number Publication date
FR2386224A1 (fr) 1978-10-27
SE439409B (sv) 1985-06-10
US4125855A (en) 1978-11-14
IT7821620A0 (it) 1978-03-24
CA1095182A (en) 1981-02-03
BE865243A (fr) 1978-07-17
JPS53120390A (en) 1978-10-20
JPS6337507B2 (nl) 1988-07-26
FR2386224B1 (nl) 1981-12-11
SE7803064L (sv) 1978-09-29
CH626488A5 (nl) 1981-11-13
NL7803206A (nl) 1978-10-02
ES468296A1 (es) 1978-11-16
GB1588695A (en) 1981-04-29
DE2812784A1 (de) 1978-10-05
DE2812784C2 (nl) 1987-08-06

Similar Documents

Publication Publication Date Title
GB2007057B (en) Signal transmission circuits
SE7804475L (sv) Hydraulisk transmission
SE7806394L (sv) Veljarsystem
FI781882A (fi) Styranordning foer elektriska kokplattor
BR7807276A (pt) Dispositivo de comutacao digital
SE7804313L (sv) Transmission
FR2352452A1 (fr) Systeme de transmission unilaterale
TR20342A (tr) Traktoer transmisyonu
SE7803443L (sv) Omkopplingskrets
SE7803063L (sv) Transmissionsomkopplingskrets
DK205178A (da) Pilleteringspresse
FI783044A (fi) Kontrollsystem foer elektriska apparater
FI782143A (fi) Ledningsgenomfoering foer elektriska ledningar
IT1093920B (it) Matrice di commutazione di trasmissione di segnali bilaterale
GB2008482B (en) Extrusion die
FI781488A (fi) Regleringsarrangemang foer kontunuerligt fungerande press
AT356182B (de) Mehrkanaliges nf-uebertragungssystem
SE7808647L (sv) Grensverde-signaleringsanordning for vexelsignaler
BR7807960A (pt) Prensa
GB2005102B (en) Gate circuit
JPS5414470A (en) Extrusion die
JPS53134865A (en) Extruder die
DD136338A6 (de) Entgasungskolonne
BE871299A (fr) Abonneecircuit
DK156604C (da) Ostepresse

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960424