IT1083374B - Procedimento per la fabbricazione di diodi schottky con barriera oro silicio - Google Patents

Procedimento per la fabbricazione di diodi schottky con barriera oro silicio

Info

Publication number
IT1083374B
IT1083374B IT68697/77A IT6869777A IT1083374B IT 1083374 B IT1083374 B IT 1083374B IT 68697/77 A IT68697/77 A IT 68697/77A IT 6869777 A IT6869777 A IT 6869777A IT 1083374 B IT1083374 B IT 1083374B
Authority
IT
Italy
Prior art keywords
procedure
manufacture
schottky diodes
gold silicon
silicon barrier
Prior art date
Application number
IT68697/77A
Other languages
English (en)
Original Assignee
Lignes Telegraph Telephon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lignes Telegraph Telephon filed Critical Lignes Telegraph Telephon
Application granted granted Critical
Publication of IT1083374B publication Critical patent/IT1083374B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts
IT68697/77A 1976-08-03 1977-07-20 Procedimento per la fabbricazione di diodi schottky con barriera oro silicio IT1083374B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7623649A FR2360993A1 (fr) 1976-08-03 1976-08-03 Perfectionnement aux procedes de fabrication de diodes schottky a barriere or-silicium

Publications (1)

Publication Number Publication Date
IT1083374B true IT1083374B (it) 1985-05-21

Family

ID=9176480

Family Applications (1)

Application Number Title Priority Date Filing Date
IT68697/77A IT1083374B (it) 1976-08-03 1977-07-20 Procedimento per la fabbricazione di diodi schottky con barriera oro silicio

Country Status (6)

Country Link
US (1) US4136348A (it)
DE (1) DE2734072A1 (it)
FR (1) FR2360993A1 (it)
GB (1) GB1581605A (it)
IT (1) IT1083374B (it)
NL (1) NL7707139A (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166279A (en) * 1977-12-30 1979-08-28 International Business Machines Corporation Electromigration resistance in gold thin film conductors
US4373166A (en) * 1978-12-20 1983-02-08 Ibm Corporation Schottky Barrier diode with controlled characteristics
US4357178A (en) * 1978-12-20 1982-11-02 Ibm Corporation Schottky barrier diode with controlled characteristics and fabrication method
FR2445627A1 (fr) * 1978-12-28 1980-07-25 Lignes Telegraph Telephon Procede perfectionne de fabrication de diodes schottky et diodes de puissance ainsi realisees
DE3025859C2 (de) * 1980-07-08 1987-01-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer Elektrode auf einem Halbleiterkörper
US4831707A (en) * 1980-11-14 1989-05-23 Fiber Materials, Inc. Method of preparing metal matrix composite materials using metallo-organic solutions for fiber pre-treatment
US4414737A (en) * 1981-01-30 1983-11-15 Tokyo Shibaura Denki Kabushiki Kaisha Production of Schottky barrier diode
US4737644A (en) * 1985-10-30 1988-04-12 International Business Machines Corporation Conductive coated semiconductor electrostatic deflection plates

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463971A (en) * 1967-04-17 1969-08-26 Hewlett Packard Co Hybrid semiconductor device including diffused-junction and schottky-barrier diodes
US3706128A (en) * 1970-06-30 1972-12-19 Varian Associates Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor
DE2057204C3 (de) * 1970-11-20 1975-02-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Metall-Halbleiterkontakten
US3785892A (en) * 1972-05-19 1974-01-15 Motorola Inc Method of forming metallization backing for silicon wafer
US3971057A (en) * 1973-08-21 1976-07-20 The United States Of America As Represented By The Secretary Of The Navy Lateral photodetector of improved sensitivity
US4065588A (en) * 1975-11-20 1977-12-27 Rca Corporation Method of making gold-cobalt contact for silicon devices

Also Published As

Publication number Publication date
GB1581605A (en) 1980-12-17
US4136348A (en) 1979-01-23
NL7707139A (nl) 1978-02-07
FR2360993A1 (fr) 1978-03-03
FR2360993B1 (it) 1980-09-05
DE2734072A1 (de) 1978-02-09

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