IT1083374B - Procedimento per la fabbricazione di diodi schottky con barriera oro silicio - Google Patents
Procedimento per la fabbricazione di diodi schottky con barriera oro silicioInfo
- Publication number
- IT1083374B IT1083374B IT68697/77A IT6869777A IT1083374B IT 1083374 B IT1083374 B IT 1083374B IT 68697/77 A IT68697/77 A IT 68697/77A IT 6869777 A IT6869777 A IT 6869777A IT 1083374 B IT1083374 B IT 1083374B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- schottky diodes
- gold silicon
- silicon barrier
- Prior art date
Links
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 title 1
- 230000004888 barrier function Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/14—Schottky barrier contacts
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7623649A FR2360993A1 (fr) | 1976-08-03 | 1976-08-03 | Perfectionnement aux procedes de fabrication de diodes schottky a barriere or-silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1083374B true IT1083374B (it) | 1985-05-21 |
Family
ID=9176480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT68697/77A IT1083374B (it) | 1976-08-03 | 1977-07-20 | Procedimento per la fabbricazione di diodi schottky con barriera oro silicio |
Country Status (6)
Country | Link |
---|---|
US (1) | US4136348A (it) |
DE (1) | DE2734072A1 (it) |
FR (1) | FR2360993A1 (it) |
GB (1) | GB1581605A (it) |
IT (1) | IT1083374B (it) |
NL (1) | NL7707139A (it) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4166279A (en) * | 1977-12-30 | 1979-08-28 | International Business Machines Corporation | Electromigration resistance in gold thin film conductors |
US4357178A (en) * | 1978-12-20 | 1982-11-02 | Ibm Corporation | Schottky barrier diode with controlled characteristics and fabrication method |
US4373166A (en) * | 1978-12-20 | 1983-02-08 | Ibm Corporation | Schottky Barrier diode with controlled characteristics |
FR2445627A1 (fr) * | 1978-12-28 | 1980-07-25 | Lignes Telegraph Telephon | Procede perfectionne de fabrication de diodes schottky et diodes de puissance ainsi realisees |
DE3025859C2 (de) * | 1980-07-08 | 1987-01-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung einer Elektrode auf einem Halbleiterkörper |
US4831707A (en) * | 1980-11-14 | 1989-05-23 | Fiber Materials, Inc. | Method of preparing metal matrix composite materials using metallo-organic solutions for fiber pre-treatment |
US4414737A (en) * | 1981-01-30 | 1983-11-15 | Tokyo Shibaura Denki Kabushiki Kaisha | Production of Schottky barrier diode |
US4737644A (en) * | 1985-10-30 | 1988-04-12 | International Business Machines Corporation | Conductive coated semiconductor electrostatic deflection plates |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3463971A (en) * | 1967-04-17 | 1969-08-26 | Hewlett Packard Co | Hybrid semiconductor device including diffused-junction and schottky-barrier diodes |
US3706128A (en) * | 1970-06-30 | 1972-12-19 | Varian Associates | Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor |
DE2057204C3 (de) * | 1970-11-20 | 1975-02-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung von Metall-Halbleiterkontakten |
US3785892A (en) * | 1972-05-19 | 1974-01-15 | Motorola Inc | Method of forming metallization backing for silicon wafer |
US3971057A (en) * | 1973-08-21 | 1976-07-20 | The United States Of America As Represented By The Secretary Of The Navy | Lateral photodetector of improved sensitivity |
US4065588A (en) * | 1975-11-20 | 1977-12-27 | Rca Corporation | Method of making gold-cobalt contact for silicon devices |
-
1976
- 1976-08-03 FR FR7623649A patent/FR2360993A1/fr active Granted
-
1977
- 1977-06-28 NL NL7707139A patent/NL7707139A/xx not_active Application Discontinuation
- 1977-07-13 GB GB29499/77A patent/GB1581605A/en not_active Expired
- 1977-07-14 US US05/815,512 patent/US4136348A/en not_active Expired - Lifetime
- 1977-07-20 IT IT68697/77A patent/IT1083374B/it active
- 1977-07-28 DE DE19772734072 patent/DE2734072A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
US4136348A (en) | 1979-01-23 |
FR2360993B1 (it) | 1980-09-05 |
FR2360993A1 (fr) | 1978-03-03 |
NL7707139A (nl) | 1978-02-07 |
GB1581605A (en) | 1980-12-17 |
DE2734072A1 (de) | 1978-02-09 |
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