IT1059472B - Circuito a semiconduttori..paricolarmente per registri a scorrimento - Google Patents

Circuito a semiconduttori..paricolarmente per registri a scorrimento

Info

Publication number
IT1059472B
IT1059472B IT67936/76A IT6793676A IT1059472B IT 1059472 B IT1059472 B IT 1059472B IT 67936/76 A IT67936/76 A IT 67936/76A IT 6793676 A IT6793676 A IT 6793676A IT 1059472 B IT1059472 B IT 1059472B
Authority
IT
Italy
Prior art keywords
semiconductor circuit
sliding registers
registers
sliding
semiconductor
Prior art date
Application number
IT67936/76A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT1059472B publication Critical patent/IT1059472B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/456—Structures for regeneration, refreshing or leakage compensation
IT67936/76A 1975-04-18 1976-04-16 Circuito a semiconduttori..paricolarmente per registri a scorrimento IT1059472B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/569,581 US4007381A (en) 1975-04-18 1975-04-18 Balanced regenerative charge detection circuit for semiconductor charge transfer devices

Publications (1)

Publication Number Publication Date
IT1059472B true IT1059472B (it) 1982-05-31

Family

ID=24276016

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67936/76A IT1059472B (it) 1975-04-18 1976-04-16 Circuito a semiconduttori..paricolarmente per registri a scorrimento

Country Status (9)

Country Link
US (1) US4007381A (it)
JP (1) JPS5921117B2 (it)
BE (1) BE840685A (it)
CA (1) CA1081362A (it)
DE (1) DE2616477A1 (it)
FR (1) FR2308165A1 (it)
GB (1) GB1536571A (it)
IT (1) IT1059472B (it)
NL (1) NL7603911A (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2258783B1 (it) * 1974-01-25 1977-09-16 Valentin Camille
US4021682A (en) * 1975-06-30 1977-05-03 Honeywell Information Systems, Inc. Charge detectors for CCD registers
JPS5328383A (en) * 1976-08-02 1978-03-16 Toshiba Corp Charge t ransfer device
JPS5938670B2 (ja) * 1976-10-15 1984-09-18 日本電気株式会社 差信号増巾回路
US4162416A (en) * 1978-01-16 1979-07-24 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier
US4185324A (en) * 1978-08-03 1980-01-22 Ncr Corporation Data storage system
US4202046A (en) * 1978-09-01 1980-05-06 Ncr Corporation Data storage system for storing multilevel signals
US4274013A (en) * 1979-02-09 1981-06-16 Bell Telephone Laboratories, Incorporated Sense amplifier
JPS58177596A (ja) * 1982-04-13 1983-10-18 Sony Corp 固体デジタルメモリの信号出力回路
JPS6010495A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd センスアンプ
US4539495A (en) * 1984-05-24 1985-09-03 General Electric Company Voltage comparator
US4814648A (en) * 1987-09-24 1989-03-21 Texas Instruments Incorporated Low 1/f noise amplifier for CCD imagers
US5101174A (en) * 1990-10-31 1992-03-31 Texas Instruments Incorporated Advanced charge detection amplifier for high performance image sensors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
US3760381A (en) * 1972-06-30 1973-09-18 Ibm Stored charge memory detection circuit
DE2309192C3 (de) * 1973-02-23 1975-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung
US3806898A (en) * 1973-06-29 1974-04-23 Ibm Regeneration of dynamic monolithic memories
US3881117A (en) * 1973-09-10 1975-04-29 Bell Telephone Labor Inc Input circuit for semiconductor charge transfer devices
US3891977A (en) * 1974-07-15 1975-06-24 Fairchild Camera Instr Co Charge coupled memory device

Also Published As

Publication number Publication date
FR2308165A1 (fr) 1976-11-12
FR2308165B1 (it) 1981-10-09
US4007381A (en) 1977-02-08
CA1081362A (en) 1980-07-08
NL7603911A (nl) 1976-10-20
DE2616477A1 (de) 1976-10-28
JPS5921117B2 (ja) 1984-05-17
JPS51129146A (en) 1976-11-10
GB1536571A (en) 1978-12-20
BE840685A (fr) 1976-08-02

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