IT1059204B - Ciruito di soglia con isteresi - Google Patents

Ciruito di soglia con isteresi

Info

Publication number
IT1059204B
IT1059204B IT22451/76A IT2245176A IT1059204B IT 1059204 B IT1059204 B IT 1059204B IT 22451/76 A IT22451/76 A IT 22451/76A IT 2245176 A IT2245176 A IT 2245176A IT 1059204 B IT1059204 B IT 1059204B
Authority
IT
Italy
Prior art keywords
hysteresis
threshold circuit
threshold
circuit
Prior art date
Application number
IT22451/76A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1059204B publication Critical patent/IT1059204B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/018Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806Interface arrangements
    • H03K19/01818Interface arrangements for integrated injection logic (I2L)
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091Integrated injection logic or merged transistor logic
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2893Bistables with hysteresis, e.g. Schmitt trigger

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
IT22451/76A 1975-04-22 1976-04-16 Ciruito di soglia con isteresi IT1059204B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7512480A FR2309084A1 (fr) 1975-04-22 1975-04-22 Dispositif a seuils pour circuits logiques integres

Publications (1)

Publication Number Publication Date
IT1059204B true IT1059204B (it) 1982-05-31

Family

ID=9154304

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22451/76A IT1059204B (it) 1975-04-22 1976-04-16 Ciruito di soglia con isteresi

Country Status (7)

Country Link
US (1) US4115711A (it)
JP (1) JPS586416B2 (it)
CA (1) CA1067160A (it)
DE (1) DE2615553C3 (it)
FR (1) FR2309084A1 (it)
GB (1) GB1487721A (it)
IT (1) IT1059204B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2748967C2 (de) * 1977-11-02 1983-01-13 Philips Patentverwaltung Gmbh, 2000 Hamburg Schaltungsanordnung für einen monolithisch integrierten Schwellwertschalter
FR2414778A1 (fr) * 1978-01-13 1979-08-10 Thomson Csf Element de memoire statique a acces aleatoire
FR2445642A1 (fr) * 1978-12-29 1980-07-25 Radiotechnique Compelec Agencement de securite en cas de chute d'une tension d'alimentation continue
JPS55145363A (en) * 1979-04-27 1980-11-12 Toshiba Corp Semiconductor device
US4390802A (en) * 1980-12-22 1983-06-28 Motorola, Inc. Low-voltage, high-noise immunity I2 L interface
JPS58137329A (ja) * 1982-02-10 1983-08-15 Nec Corp 入力信号線断線検出回路
JPS58182922A (ja) * 1982-04-21 1983-10-26 Toshiba Corp 入力インタ−フエイス回路
US4542303A (en) * 1983-10-03 1985-09-17 Motorola, Inc. Comparator circuit
US5021856A (en) * 1989-03-15 1991-06-04 Plessey Overseas Limited Universal cell for bipolar NPN and PNP transistors and resistive elements
JP2573393B2 (ja) * 1990-05-17 1997-01-22 株式会社東芝 コンパレータ回路
KR102536267B1 (ko) 2017-12-26 2023-05-25 삼성전자주식회사 슬라이더 트랙 및 슬라이더를 표시하기 위한 전자 장치 및 그의 동작 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2957091A (en) * 1958-04-09 1960-10-18 Bell Telephone Labor Inc Transistor ring counter with bistable stages
JPS5346587B2 (it) * 1974-02-14 1978-12-14

Also Published As

Publication number Publication date
JPS586416B2 (ja) 1983-02-04
US4115711A (en) 1978-09-19
JPS51130160A (en) 1976-11-12
FR2309084B1 (it) 1980-01-04
DE2615553A1 (de) 1976-10-28
FR2309084A1 (fr) 1976-11-19
DE2615553B2 (de) 1977-06-02
GB1487721A (en) 1977-10-05
CA1067160A (en) 1979-11-27
DE2615553C3 (de) 1982-07-22

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