IT1046113B - Stable phase three potassium nitrate - by precipitating potassium nitrate vapour under vacuum in form of thin layer and cooling/relieving vacuum for ferroelectric memory cells
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Stable phase three potassium nitrate - by precipitating potassium nitrate vapour under vacuum in form of thin layer and cooling/relieving vacuum for ferroelectric memory cells
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IT1046113B
IT1046113BIT3243073AIT3243073AIT1046113BIT 1046113 BIT1046113 BIT 1046113BIT 3243073 AIT3243073 AIT 3243073AIT 3243073 AIT3243073 AIT 3243073AIT 1046113 BIT1046113 BIT 1046113B
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Stable phase III potassium nitrate esp. for ferroelectric memory cells is prepd. by (a) melting pure potassium nitrate under vacuum, (b) evaporating the molten potassium nitrate under vacuum (c) precipitating the vapours in the form of a thin layer, and (d) reducing the vacuum to atmospheric pressure and the temps. to room temp. while maintaing a moisture-free atmosphere. The pdt. has ferroelectric, and light transmitting and polarising properties.
IT3243073A1973-12-311973-12-31Stable phase three potassium nitrate - by precipitating potassium nitrate vapour under vacuum in form of thin layer and cooling/relieving vacuum for ferroelectric memory cells
IT1046113B
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Stable phase three potassium nitrate - by precipitating potassium nitrate vapour under vacuum in form of thin layer and cooling/relieving vacuum for ferroelectric memory cells
Stable phase three potassium nitrate - by precipitating potassium nitrate vapour under vacuum in form of thin layer and cooling/relieving vacuum for ferroelectric memory cells
Stable phase three potassium nitrate - by precipitating potassium nitrate vapour under vacuum in form of thin layer and cooling/relieving vacuum for ferroelectric memory cells
Stable phase three potassium nitrate - by precipitating potassium nitrate vapour under vacuum in form of thin layer and cooling/relieving vacuum for ferroelectric memory cells