IT1032670B - Amplificatore a transistori - Google Patents
Amplificatore a transistoriInfo
- Publication number
- IT1032670B IT1032670B IT67954/75A IT6795475A IT1032670B IT 1032670 B IT1032670 B IT 1032670B IT 67954/75 A IT67954/75 A IT 67954/75A IT 6795475 A IT6795475 A IT 6795475A IT 1032670 B IT1032670 B IT 1032670B
- Authority
- IT
- Italy
- Prior art keywords
- transistor amplifier
- amplifier
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7405237A NL7405237A (nl) | 1974-04-18 | 1974-04-18 | Parallelschakelen van halfgeleidersystemen. |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1032670B true IT1032670B (it) | 1979-06-20 |
Family
ID=19821177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT67954/75A IT1032670B (it) | 1974-04-18 | 1975-04-15 | Amplificatore a transistori |
Country Status (10)
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5279843U (US06256357-20010703-M00001.png) * | 1975-12-12 | 1977-06-14 | ||
NL8204878A (nl) * | 1982-12-17 | 1984-07-16 | Philips Nv | Halfgeleiderinrichting. |
IT1213171B (it) * | 1984-05-21 | 1989-12-14 | Ates Componenti Elettron | Transistore bipolare di potenza. |
IT1215230B (it) * | 1985-01-08 | 1990-01-31 | Ates Componenti Elettron | Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria |
IT1198275B (it) * | 1986-12-30 | 1988-12-21 | Sgs Microelettronica Spa | Transistore di potenza con miglioramento della resistenza alla rottura secondaria diretta |
NL9002591A (nl) * | 1990-11-28 | 1992-06-16 | Philips Nv | Versterkerschakeling met temperatuurcompensatie. |
US6611172B1 (en) * | 2001-06-25 | 2003-08-26 | Sirenza Microdevices, Inc. | Thermally distributed darlington amplifier |
US10403621B2 (en) | 2014-10-29 | 2019-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit layout, layout method and system for implementing the method |
KR102579277B1 (ko) * | 2015-02-15 | 2023-09-14 | 스카이워크스 솔루션즈, 인코포레이티드 | 강화된 열적 견고성을 위해 스태거형 캐스코드 레이아웃을 갖는 전력 증폭기 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3667064A (en) * | 1969-05-19 | 1972-05-30 | Massachusetts Inst Technology | Power semiconductor device with negative thermal feedback |
-
1974
- 1974-04-18 NL NL7405237A patent/NL7405237A/xx unknown
-
1975
- 1975-04-05 DE DE2514958A patent/DE2514958C2/de not_active Expired
- 1975-04-11 US US05/567,304 patent/US3952258A/en not_active Expired - Lifetime
- 1975-04-15 DK DK161475A patent/DK161475A/da unknown
- 1975-04-15 CA CA224,615A patent/CA1039368A/en not_active Expired
- 1975-04-15 GB GB1540375A patent/GB1467612A/en not_active Expired
- 1975-04-15 IT IT67954/75A patent/IT1032670B/it active
- 1975-04-15 AT AT285175A patent/AT347502B/de not_active IP Right Cessation
- 1975-04-17 JP JP50045917A patent/JPS5821442B2/ja not_active Expired
- 1975-04-18 FR FR7512125A patent/FR2268330B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3952258A (en) | 1976-04-20 |
DE2514958A1 (de) | 1975-10-30 |
FR2268330A1 (US06256357-20010703-M00001.png) | 1975-11-14 |
NL7405237A (nl) | 1975-10-21 |
DE2514958C2 (de) | 1982-06-03 |
AU8013375A (en) | 1976-10-21 |
AT347502B (de) | 1978-12-27 |
FR2268330B1 (US06256357-20010703-M00001.png) | 1979-07-27 |
CA1039368A (en) | 1978-09-26 |
GB1467612A (en) | 1977-03-16 |
JPS50140042A (US06256357-20010703-M00001.png) | 1975-11-10 |
DK161475A (US06256357-20010703-M00001.png) | 1975-10-19 |
JPS5821442B2 (ja) | 1983-04-30 |
ATA285175A (de) | 1978-05-15 |
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