IT1026514B - Dispositivo semiconduttore foto sensibile per alta tensione - Google Patents
Dispositivo semiconduttore foto sensibile per alta tensioneInfo
- Publication number
- IT1026514B IT1026514B IT29830/74A IT2983074A IT1026514B IT 1026514 B IT1026514 B IT 1026514B IT 29830/74 A IT29830/74 A IT 29830/74A IT 2983074 A IT2983074 A IT 2983074A IT 1026514 B IT1026514 B IT 1026514B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- high voltage
- photo sensitive
- sensitive semiconductor
- photo
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7342855A FR2253277B1 (it) | 1973-11-30 | 1973-11-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1026514B true IT1026514B (it) | 1978-10-20 |
Family
ID=9128564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT29830/74A IT1026514B (it) | 1973-11-30 | 1974-11-26 | Dispositivo semiconduttore foto sensibile per alta tensione |
Country Status (6)
Country | Link |
---|---|
US (1) | US3970843A (it) |
BE (1) | BE821876A (it) |
DE (1) | DE2456131A1 (it) |
FR (1) | FR2253277B1 (it) |
GB (1) | GB1488033A (it) |
IT (1) | IT1026514B (it) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583386B2 (ja) * | 1975-10-11 | 1983-01-21 | 株式会社日立製作所 | ソウホウコウセイホトサイリスタ |
US4068255A (en) * | 1975-10-16 | 1978-01-10 | Dionics, Inc. | Mesa-type high voltage switching integrated circuit |
US4130828A (en) * | 1975-10-16 | 1978-12-19 | Silec-Semi-Conducteurs | Triac structure having improved triggering sensitivity with single groove extending from gate region |
JPS584814B2 (ja) * | 1976-04-27 | 1983-01-27 | 三菱電機株式会社 | 半導体装置 |
US4166224A (en) * | 1977-06-17 | 1979-08-28 | Hutson Jerald L | Photosensitive zero voltage semiconductor switching device |
IN152332B (it) * | 1978-08-03 | 1983-12-24 | Westinghouse Electric Corp | |
GB2057188B (en) * | 1979-08-22 | 1983-10-19 | Texas Instruments Ltd | Semiconductor switch device for a-c power control |
GB2082836A (en) * | 1980-08-20 | 1982-03-10 | Philips Electronic Associated | Corrugated semiconductor devices |
FR2574594B1 (fr) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | Structure integree de triac a commande par diac |
FR2586141B1 (fr) * | 1985-08-06 | 1987-11-20 | Thomson Csf | Thyristor sensible a decouplage gachette-cathode integre |
US4914045A (en) * | 1985-12-19 | 1990-04-03 | Teccor Electronics, Inc. | Method of fabricating packaged TRIAC and trigger switch |
US5082791A (en) * | 1988-05-13 | 1992-01-21 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US5479031A (en) * | 1993-09-10 | 1995-12-26 | Teccor Electronics, Inc. | Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value |
US6384462B1 (en) * | 2000-12-06 | 2002-05-07 | Nova Crystals, Inc. | Planar hetero-interface photodetector |
FR2960097A1 (fr) * | 2010-05-11 | 2011-11-18 | St Microelectronics Tours Sas | Composant de protection bidirectionnel |
US9941264B2 (en) * | 2015-04-03 | 2018-04-10 | Littelfuse, Inc. | Transient overvoltage protection device |
CN118281054A (zh) * | 2022-12-30 | 2024-07-02 | 力特半导体(无锡)有限公司 | 高抗噪度triac结构 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3296502A (en) * | 1962-11-28 | 1967-01-03 | Gen Instrument Corp | Variable photosensitive semiconductor device having a graduatingly different operable surface area |
NL6709192A (it) * | 1967-07-01 | 1969-01-03 | ||
JPS5035793B1 (it) * | 1970-09-11 | 1975-11-19 | ||
US3761326A (en) * | 1971-05-20 | 1973-09-25 | Fairchild Camera Instr Co | Process for making an optimum high gain bandwidth phototransistor structure |
US3814993A (en) * | 1972-11-15 | 1974-06-04 | Us Navy | Tuneable infrared photocathode |
-
1973
- 1973-11-30 FR FR7342855A patent/FR2253277B1/fr not_active Expired
-
1974
- 1974-11-05 BE BE150230A patent/BE821876A/xx unknown
- 1974-11-19 US US05/525,108 patent/US3970843A/en not_active Expired - Lifetime
- 1974-11-26 IT IT29830/74A patent/IT1026514B/it active
- 1974-11-27 DE DE19742456131 patent/DE2456131A1/de not_active Withdrawn
- 1974-12-02 GB GB52137/74A patent/GB1488033A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1488033A (en) | 1977-10-05 |
FR2253277B1 (it) | 1977-08-12 |
DE2456131A1 (de) | 1975-06-05 |
US3970843A (en) | 1976-07-20 |
BE821876A (fr) | 1975-05-05 |
FR2253277A1 (it) | 1975-06-27 |
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