IT1025566B - Procedimento per fabbricare mono cristalli di silicio drogati in modo uniforme con conducibilitan mediante esposiziosizione a neutroni - Google Patents

Procedimento per fabbricare mono cristalli di silicio drogati in modo uniforme con conducibilitan mediante esposiziosizione a neutroni

Info

Publication number
IT1025566B
IT1025566B IT2927374A IT2927374A IT1025566B IT 1025566 B IT1025566 B IT 1025566B IT 2927374 A IT2927374 A IT 2927374A IT 2927374 A IT2927374 A IT 2927374A IT 1025566 B IT1025566 B IT 1025566B
Authority
IT
Italy
Prior art keywords
doping
intensity
desired position
thermal neutrons
give desired
Prior art date
Application number
IT2927374A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2356376A external-priority patent/DE2356376A1/de
Priority claimed from DE2362320A external-priority patent/DE2362320A1/de
Priority claimed from DE19732362264 external-priority patent/DE2362264B2/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1025566B publication Critical patent/IT1025566B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT2927374A 1973-11-12 1974-11-11 Procedimento per fabbricare mono cristalli di silicio drogati in modo uniforme con conducibilitan mediante esposiziosizione a neutroni IT1025566B (it)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE2356376A DE2356376A1 (de) 1973-11-12 1973-11-12 Verfahren zum herstellen von homogen dotierten siliciumeinkristallen mit n-leitfaehigkeit durch neutronenbestrahlung
DE2362320A DE2362320A1 (de) 1973-12-14 1973-12-14 Verfahren zum herstellen von homogendotierten siliciumeinkristallen durch neutronenbestrahlung
DE19732362264 DE2362264B2 (de) 1973-12-14 1973-12-14 Verfahren zum herstellen von homogen n-dotierten siliciumeinkristallen durch bestrahlung mit thermischen neutronen

Publications (1)

Publication Number Publication Date
IT1025566B true IT1025566B (it) 1978-08-30

Family

ID=27185618

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2927374A IT1025566B (it) 1973-11-12 1974-11-11 Procedimento per fabbricare mono cristalli di silicio drogati in modo uniforme con conducibilitan mediante esposiziosizione a neutroni

Country Status (2)

Country Link
IT (1) IT1025566B (it)
SE (1) SE406043B (it)

Also Published As

Publication number Publication date
SE406043B (sv) 1979-01-22
SE7414148L (it) 1975-07-10

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