IT1017250B - Disposizione di transistori su un substrato isolante - Google Patents

Disposizione di transistori su un substrato isolante

Info

Publication number
IT1017250B
IT1017250B IT25297/74A IT2529774A IT1017250B IT 1017250 B IT1017250 B IT 1017250B IT 25297/74 A IT25297/74 A IT 25297/74A IT 2529774 A IT2529774 A IT 2529774A IT 1017250 B IT1017250 B IT 1017250B
Authority
IT
Italy
Prior art keywords
transistors
arrangement
insulating substrate
insulating
substrate
Prior art date
Application number
IT25297/74A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1017250B publication Critical patent/IT1017250B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
IT25297/74A 1973-07-19 1974-07-18 Disposizione di transistori su un substrato isolante IT1017250B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732336821 DE2336821A1 (de) 1973-07-19 1973-07-19 Transistoranordnung

Publications (1)

Publication Number Publication Date
IT1017250B true IT1017250B (it) 1977-07-20

Family

ID=5887458

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25297/74A IT1017250B (it) 1973-07-19 1974-07-18 Disposizione di transistori su un substrato isolante

Country Status (8)

Country Link
JP (1) JPS5043849A (it)
BE (1) BE817847A (it)
DE (1) DE2336821A1 (it)
FR (1) FR2258003B3 (it)
GB (1) GB1448303A (it)
IT (1) IT1017250B (it)
LU (1) LU70553A1 (it)
NL (1) NL7409397A (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435752A1 (de) * 1984-09-28 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Schaltung zur zwischenspeicherung digitaler signale
GB2403848A (en) * 2003-07-08 2005-01-12 Seiko Epson Corp Semiconductor device

Also Published As

Publication number Publication date
FR2258003B3 (it) 1977-05-06
GB1448303A (en) 1976-09-02
DE2336821A1 (de) 1975-02-06
NL7409397A (nl) 1975-01-21
BE817847A (fr) 1974-11-18
LU70553A1 (it) 1974-11-28
FR2258003A1 (it) 1975-08-08
JPS5043849A (it) 1975-04-19

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