IN2015MN00065A - - Google Patents
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- Publication number
- IN2015MN00065A IN2015MN00065A IN65MUN2015A IN2015MN00065A IN 2015MN00065 A IN2015MN00065 A IN 2015MN00065A IN 65MUN2015 A IN65MUN2015 A IN 65MUN2015A IN 2015MN00065 A IN2015MN00065 A IN 2015MN00065A
- Authority
- IN
- India
- Prior art keywords
- layers
- mtj2
- mtj1
- structures
- mtj structures
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/589,315 US9047964B2 (en) | 2012-08-20 | 2012-08-20 | Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness |
| PCT/US2013/055171 WO2014031442A1 (en) | 2012-08-20 | 2013-08-15 | Multi-level memory cell using multiple magentic tunnel junctions with varying mgo thickness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2015MN00065A true IN2015MN00065A (https=) | 2015-10-16 |
Family
ID=49111543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN65MUN2015 IN2015MN00065A (https=) | 2012-08-20 | 2013-08-15 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9047964B2 (https=) |
| EP (1) | EP2885787A1 (https=) |
| CN (1) | CN104584134A (https=) |
| IN (1) | IN2015MN00065A (https=) |
| WO (1) | WO2014031442A1 (https=) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7044550B2 (ja) * | 2014-08-27 | 2022-03-30 | ニュートリション アンド バイオサイエンシズ ユーエスエー １，リミティド ライアビリティ カンパニー | アセトン不溶性含有量の低いエステル化セルロースエーテル |
| KR20170064018A (ko) * | 2015-11-30 | 2017-06-09 | 에스케이하이닉스 주식회사 | 전자 장치 |
| CN107342104B (zh) * | 2016-04-29 | 2021-04-27 | 上海磁宇信息科技有限公司 | 一种非对称磁性随机存储器及其磁性记忆单元读取方法 |
| CN107481755A (zh) * | 2016-06-13 | 2017-12-15 | 中电海康集团有限公司 | 一种多态磁性存储器的位元结构 |
| KR102266035B1 (ko) * | 2017-05-26 | 2021-06-17 | 삼성전자주식회사 | 자기 저항 메모리 장치의 제조 방법 및 이를 포함하는 반도체 칩 제조 방법 |
| US10541268B2 (en) | 2017-12-28 | 2020-01-21 | Spin Memory, Inc. | Three-dimensional magnetic memory devices |
| US10693056B2 (en) | 2017-12-28 | 2020-06-23 | Spin Memory, Inc. | Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer |
| US10403343B2 (en) * | 2017-12-29 | 2019-09-03 | Spin Memory, Inc. | Systems and methods utilizing serial configurations of magnetic memory devices |
| US10424357B2 (en) | 2017-12-29 | 2019-09-24 | Spin Memory, Inc. | Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer |
| US10347308B1 (en) | 2017-12-29 | 2019-07-09 | Spin Memory, Inc. | Systems and methods utilizing parallel configurations of magnetic memory devices |
| US10803916B2 (en) | 2017-12-29 | 2020-10-13 | Spin Memory, Inc. | Methods and systems for writing to magnetic memory devices utilizing alternating current |
| US10319424B1 (en) | 2018-01-08 | 2019-06-11 | Spin Memory, Inc. | Adjustable current selectors |
| US10192788B1 (en) | 2018-01-08 | 2019-01-29 | Spin Transfer Technologies | Methods of fabricating dual threshold voltage devices with stacked gates |
| US10192789B1 (en) | 2018-01-08 | 2019-01-29 | Spin Transfer Technologies | Methods of fabricating dual threshold voltage devices |
| US10192787B1 (en) | 2018-01-08 | 2019-01-29 | Spin Transfer Technologies | Methods of fabricating contacts for cylindrical devices |
| US10381550B1 (en) | 2018-03-01 | 2019-08-13 | Samsung Electronics Co., Ltd. | Method and system for engineering the secondary barrier layer in dual magnetic junctions |
| US11488647B2 (en) | 2018-06-28 | 2022-11-01 | Everspin Technologies, Inc. | Stacked magnetoresistive structures and methods therefor |
| US10692556B2 (en) | 2018-09-28 | 2020-06-23 | Spin Memory, Inc. | Defect injection structure and mechanism for magnetic memory |
| US10878870B2 (en) | 2018-09-28 | 2020-12-29 | Spin Memory, Inc. | Defect propagation structure and mechanism for magnetic memory |
| EP3664094B1 (en) * | 2018-12-06 | 2022-08-24 | IMEC vzw | A magnetic tunnel junction unit and a memory device |
| US11250896B2 (en) * | 2019-06-23 | 2022-02-15 | Purdue Research Foundation | Valley spin hall effect based non-volatile memory |
| CN110277490B (zh) * | 2019-06-24 | 2023-06-09 | 中国科学院微电子研究所 | Stt-mram参考单元及其制备方法及包含该参考单元的芯片 |
| GB2588151B (en) * | 2019-10-09 | 2022-05-04 | Huo Suguo | Hybrid perpendicular and in-plane STT-MRAM |
| US11335850B2 (en) | 2020-03-12 | 2022-05-17 | International Business Machines Corporation | Magnetoresistive random-access memory device including magnetic tunnel junctions |
| US11316104B2 (en) * | 2020-03-13 | 2022-04-26 | International Business Machines Corporation | Inverted wide base double magnetic tunnel junction device |
| US11552243B2 (en) * | 2020-04-24 | 2023-01-10 | International Business Machines Corporation | MRAM structure with ternary weight storage |
| WO2022032562A1 (zh) * | 2020-08-13 | 2022-02-17 | 华为技术有限公司 | 一种存储单元以及相关设备 |
| KR102768596B1 (ko) | 2020-11-03 | 2025-02-13 | 삼성전자주식회사 | 이미지 센서 및 이미지 센싱 장치 |
| US11514962B2 (en) | 2020-11-12 | 2022-11-29 | International Business Machines Corporation | Two-bit magnetoresistive random-access memory cell |
| US12207477B2 (en) | 2021-03-18 | 2025-01-21 | International Business Machines Corporation | Same level MRAM stacks having different configurations |
| WO2025074730A1 (ja) * | 2023-10-02 | 2025-04-10 | ソニーセミコンダクタソリューションズ株式会社 | 不揮発性メモリ、および、演算装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6169689B1 (en) | 1999-12-08 | 2001-01-02 | Motorola, Inc. | MTJ stacked cell memory sensing method and apparatus |
| US20050167657A1 (en) | 2000-03-09 | 2005-08-04 | Nickel Janice H. | Multi-bit magnetic memory cells |
| US6590806B1 (en) | 2000-03-09 | 2003-07-08 | Hewlett-Packard Development Company, L.P. | Multibit magnetic memory element |
| US6985385B2 (en) | 2003-08-26 | 2006-01-10 | Grandis, Inc. | Magnetic memory element utilizing spin transfer switching and storing multiple bits |
| JP4747507B2 (ja) | 2004-04-16 | 2011-08-17 | ソニー株式会社 | 磁気メモリ及びその記録方法 |
| US7211446B2 (en) | 2004-06-11 | 2007-05-01 | International Business Machines Corporation | Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory |
| US7368299B2 (en) | 2004-07-14 | 2008-05-06 | Infineon Technologies Ag | MTJ patterning using free layer wet etching and lift off techniques |
| JP2006286038A (ja) * | 2005-03-31 | 2006-10-19 | Toshiba Corp | 磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの書き込み方法 |
| US20080246104A1 (en) * | 2007-02-12 | 2008-10-09 | Yadav Technology | High Capacity Low Cost Multi-State Magnetic Memory |
| US8084835B2 (en) | 2006-10-20 | 2011-12-27 | Avalanche Technology, Inc. | Non-uniform switching based non-volatile magnetic based memory |
| US7804710B2 (en) | 2008-03-31 | 2010-09-28 | International Business Machines Corporation | Multi-layer magnetic random access memory using spin-torque magnetic tunnel junctions and method for write state of the multi-layer magnetic random access memory |
| US8125040B2 (en) | 2008-04-18 | 2012-02-28 | Qualcomm Incorporated | Two mask MTJ integration for STT MRAM |
| US9159910B2 (en) | 2008-04-21 | 2015-10-13 | Qualcomm Incorporated | One-mask MTJ integration for STT MRAM |
| US7863060B2 (en) | 2009-03-23 | 2011-01-04 | Magic Technologies, Inc. | Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices |
| US8344433B2 (en) | 2009-04-14 | 2013-01-01 | Qualcomm Incorporated | Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same |
| US8470462B2 (en) * | 2010-11-30 | 2013-06-25 | Magic Technologies, Inc. | Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions |
-
2012
- 2012-08-20 US US13/589,315 patent/US9047964B2/en active Active
-
2013
- 2013-08-15 IN IN65MUN2015 patent/IN2015MN00065A/en unknown
- 2013-08-15 CN CN201380043908.4A patent/CN104584134A/zh active Pending
- 2013-08-15 WO PCT/US2013/055171 patent/WO2014031442A1/en not_active Ceased
- 2013-08-15 EP EP13756757.4A patent/EP2885787A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP2885787A1 (en) | 2015-06-24 |
| WO2014031442A1 (en) | 2014-02-27 |
| US9047964B2 (en) | 2015-06-02 |
| CN104584134A (zh) | 2015-04-29 |
| US20140050019A1 (en) | 2014-02-20 |
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