JP2012099816A5 - - Google Patents
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- Publication number
- JP2012099816A5 JP2012099816A5 JP2011236199A JP2011236199A JP2012099816A5 JP 2012099816 A5 JP2012099816 A5 JP 2012099816A5 JP 2011236199 A JP2011236199 A JP 2011236199A JP 2011236199 A JP2011236199 A JP 2011236199A JP 2012099816 A5 JP2012099816 A5 JP 2012099816A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- tunnel junction
- magnetic tunnel
- ferromagnetic
- junction cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims 59
- 230000005294 ferromagnetic effect Effects 0.000 claims 31
- 230000005291 magnetic effect Effects 0.000 claims 19
- 230000004888 barrier function Effects 0.000 claims 9
- 230000003014 reinforcing effect Effects 0.000 claims 4
- 230000005415 magnetization Effects 0.000 claims 3
- 229910005335 FePt Inorganic materials 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 230000037431 insertion Effects 0.000 claims 2
- 238000003780 insertion Methods 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910003321 CoFe Inorganic materials 0.000 claims 1
- 229910019236 CoFeB Inorganic materials 0.000 claims 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 1
- 229910002837 PtCo Inorganic materials 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052771 Terbium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910000423 chromium oxide Inorganic materials 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/916,738 | 2010-11-01 | ||
| US12/916,738 US20120104522A1 (en) | 2010-11-01 | 2010-11-01 | Magnetic tunnel junction cells having perpendicular anisotropy and enhancement layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012099816A JP2012099816A (ja) | 2012-05-24 |
| JP2012099816A5 true JP2012099816A5 (https=) | 2012-07-05 |
Family
ID=45995736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011236199A Pending JP2012099816A (ja) | 2010-11-01 | 2011-10-27 | 磁気トンネル接合セル、装置、およびメモリアレイ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20120104522A1 (https=) |
| JP (1) | JP2012099816A (https=) |
| KR (1) | KR20120046085A (https=) |
| CN (1) | CN102456830A (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012238631A (ja) * | 2011-05-10 | 2012-12-06 | Sony Corp | 記憶素子、記憶装置 |
| US9214624B2 (en) | 2012-07-27 | 2015-12-15 | Qualcomm Incorporated | Amorphous spacerlattice spacer for perpendicular MTJs |
| US8836056B2 (en) | 2012-09-26 | 2014-09-16 | Intel Corporation | Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer |
| US8796796B2 (en) * | 2012-12-20 | 2014-08-05 | Samsung Electronics Co., Ltd. | Method and system for providing magnetic junctions having improved polarization enhancement and reference layers |
| US9461242B2 (en) | 2013-09-13 | 2016-10-04 | Micron Technology, Inc. | Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems |
| US9608197B2 (en) | 2013-09-18 | 2017-03-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
| US9306155B2 (en) * | 2013-11-11 | 2016-04-05 | Samsung Electronics Co., Ltd. | Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications |
| US9281466B2 (en) | 2014-04-09 | 2016-03-08 | Micron Technology, Inc. | Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication |
| KR101695468B1 (ko) * | 2014-07-09 | 2017-01-13 | 한국과학기술원 | 트랜지스터와 결합하여 직접화한 고출력 스핀발진기 |
| US9007725B1 (en) | 2014-10-07 | 2015-04-14 | Western Digital (Fremont), Llc | Sensor with positive coupling between dual ferromagnetic free layer laminates |
| US9349945B2 (en) | 2014-10-16 | 2016-05-24 | Micron Technology, Inc. | Memory cells, semiconductor devices, and methods of fabrication |
| US10439131B2 (en) | 2015-01-15 | 2019-10-08 | Micron Technology, Inc. | Methods of forming semiconductor devices including tunnel barrier materials |
| KR102566954B1 (ko) | 2016-08-04 | 2023-08-16 | 삼성전자주식회사 | 자기 메모리 소자 및 그 제조 방법 |
| CN110192288B (zh) * | 2016-12-28 | 2023-04-25 | 英特尔公司 | 垂直自旋转移矩磁机构 |
| US9972773B1 (en) * | 2017-08-28 | 2018-05-15 | Samsung Electronics Co., Ltd. | Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s) |
| US10665773B2 (en) * | 2018-01-26 | 2020-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM) |
| EP3756024B1 (en) * | 2018-02-19 | 2026-04-29 | BRUKER FRANCE (Société par Actions Simplifiée) | Nuclear spin hyperpolarization in a porous matrix |
| CN114503296A (zh) * | 2019-09-27 | 2022-05-13 | 华为技术有限公司 | 一种mtj单元、vcma驱动方法及mram |
| CN111261772A (zh) * | 2020-02-10 | 2020-06-09 | 北京航空航天大学 | 磁隧道结及其形成方法、磁存储器 |
| EP4362626A1 (en) * | 2022-10-31 | 2024-05-01 | Commissariat à l'énergie atomique et aux énergies alternatives | Magnetic device and corresponding method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6034887A (en) * | 1998-08-05 | 2000-03-07 | International Business Machines Corporation | Non-volatile magnetic memory cell and devices |
| US20070096229A1 (en) * | 2005-10-28 | 2007-05-03 | Masatoshi Yoshikawa | Magnetoresistive element and magnetic memory device |
| US8063459B2 (en) * | 2007-02-12 | 2011-11-22 | Avalanche Technologies, Inc. | Non-volatile magnetic memory element with graded layer |
| US8593862B2 (en) * | 2007-02-12 | 2013-11-26 | Avalanche Technology, Inc. | Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy |
| WO2008102499A1 (ja) * | 2007-02-23 | 2008-08-28 | Nec Corporation | 磁性体装置及び磁気ランダムアクセスメモリ |
| JP4738395B2 (ja) * | 2007-09-25 | 2011-08-03 | 株式会社東芝 | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
| JP2011175987A (ja) * | 2008-05-09 | 2011-09-08 | Fuji Electric Co Ltd | スピンバルブ素子および記憶装置 |
| US7936598B2 (en) * | 2009-04-28 | 2011-05-03 | Seagate Technology | Magnetic stack having assist layer |
| JP2011138954A (ja) * | 2009-12-28 | 2011-07-14 | Canon Anelva Corp | 強磁性層の垂直磁化を用いた磁気トンネル接合デバイスの製造方法 |
| US8374048B2 (en) * | 2010-08-11 | 2013-02-12 | Grandis, Inc. | Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy |
-
2010
- 2010-11-01 US US12/916,738 patent/US20120104522A1/en not_active Abandoned
-
2011
- 2011-10-27 JP JP2011236199A patent/JP2012099816A/ja active Pending
- 2011-10-31 KR KR1020110112327A patent/KR20120046085A/ko not_active Ceased
- 2011-11-01 CN CN2011103525794A patent/CN102456830A/zh active Pending
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