IN2014DN03024A - - Google Patents

Info

Publication number
IN2014DN03024A
IN2014DN03024A IN3024DEN2014A IN2014DN03024A IN 2014DN03024 A IN2014DN03024 A IN 2014DN03024A IN 3024DEN2014 A IN3024DEN2014 A IN 3024DEN2014A IN 2014DN03024 A IN2014DN03024 A IN 2014DN03024A
Authority
IN
India
Prior art keywords
overvoltage
igbt
turn
slope
techniques
Prior art date
Application number
Other languages
English (en)
Inventor
Jean Marc Cyr
Yacoubi Maalainine El
Mohammed Amar
Pascal Fleury
Original Assignee
Tm4 Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tm4 Inc filed Critical Tm4 Inc
Publication of IN2014DN03024A publication Critical patent/IN2014DN03024A/en

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/32Means for protecting converters other than automatic disconnection
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166Soft switching
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0003Details of control, feedback or regulation circuits
    • H02M1/0029Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Inverter Devices (AREA)
IN3024DEN2014 2011-12-07 2012-12-05 IN2014DN03024A (OSRAM)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161567800P 2011-12-07 2011-12-07
PCT/CA2012/001125 WO2013082705A1 (en) 2011-12-07 2012-12-05 Turn-off overvoltage limiting for igbt

Publications (1)

Publication Number Publication Date
IN2014DN03024A true IN2014DN03024A (OSRAM) 2015-05-08

Family

ID=48573450

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3024DEN2014 IN2014DN03024A (OSRAM) 2011-12-07 2012-12-05

Country Status (8)

Country Link
US (2) US9608543B2 (OSRAM)
EP (1) EP2789092B1 (OSRAM)
JP (1) JP6239525B2 (OSRAM)
CN (1) CN103988410B (OSRAM)
BR (1) BR112014012206A2 (OSRAM)
CA (1) CA2851376C (OSRAM)
IN (1) IN2014DN03024A (OSRAM)
WO (1) WO2013082705A1 (OSRAM)

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EP2789092B1 (en) * 2011-12-07 2020-02-05 TM4 Inc. Turn-off overvoltage limiting for igbt
US9112501B2 (en) 2012-09-29 2015-08-18 Infineon Technologies Ag Electronic circuit with an electronic switch and a monitoring circuit
ES2745999T3 (es) 2013-04-04 2020-03-04 Tm4 Inc Célula de conmutación y circuito de compensación para la misma
JP6556712B2 (ja) * 2013-11-01 2019-08-07 ティーエム4・インコーポレーテッド スイッチング過電圧を制限するように構成された電力変換器
KR20160086344A (ko) * 2013-11-14 2016-07-19 티엠4 인코포레이티드 전력 전자 스위치의 턴-온 및 턴-오프를 제어하는 보상 회로, 커뮤테이션 셀 및 전력 변환기
CA2930187A1 (en) * 2013-11-14 2015-05-21 Tm4 Inc. Commutation cell, power converter and compensation circuit having dynamically controlled voltage gains
EP3314656B1 (en) * 2015-06-23 2021-08-04 DANA TM4 Inc. Physical topology for a power converter
US9812941B2 (en) 2015-09-11 2017-11-07 Nxp Usa, Inc. High power driver having multiple turn off modes
CN108141129B (zh) * 2015-09-14 2020-07-14 Tm4股份有限公司 配置为限制开关过电压的电力转换器
CN107154791A (zh) * 2016-03-02 2017-09-12 国网辽宁省电力有限公司电力科学研究院 高压大功率igbt模块的电流上升斜率检测电路及其检测方法
US10122294B2 (en) 2016-12-01 2018-11-06 Ford Global Technologies, Llc Active gate clamping for inverter switching devices with enhanced common source inductance
US9866099B1 (en) * 2016-12-30 2018-01-09 Texas Instruments Incorporated Adaptive high-side gate drive for ringing mitigation in switching power converters
JP7341885B2 (ja) * 2019-12-27 2023-09-11 川崎重工業株式会社 スイッチング回路
DE112021007336T5 (de) * 2021-03-19 2023-12-28 Mitsubishi Electric Corporation Gleichstromversorgung, Kältekreislaufvorrichtung, Klimatisierungsvorrichtung und Kühlvorrichtung
WO2023001995A1 (fr) * 2021-07-21 2023-01-26 Valeo Systemes De Controle Moteur Systeme de commutation et convertisseur de tension ou engin de mobilite comprenant un tel systeme de commutation

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JP3379556B2 (ja) * 1993-12-30 2003-02-24 サンケン電気株式会社 スイッチング素子を有する回路装置
KR100337035B1 (ko) * 1999-11-26 2002-05-16 권영한 전력용 반도체 스위칭 소자의 직렬구동을 위한 수동형보조회로
JP3598933B2 (ja) 2000-02-28 2004-12-08 株式会社日立製作所 電力変換装置
JP3932841B2 (ja) * 2001-08-29 2007-06-20 株式会社日立製作所 半導体電力変換装置
JP3731562B2 (ja) * 2002-05-22 2006-01-05 日産自動車株式会社 電流制御型素子用駆動回路
DE10231198A1 (de) * 2002-07-10 2004-01-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren und Schaltungsanordnung zum Begrenzen einer Überspannung
JP3975162B2 (ja) * 2002-12-20 2007-09-12 トヨタ自動車株式会社 インバータ装置およびそれを用いた電動機一体インバータ装置
JP4739059B2 (ja) * 2006-02-23 2011-08-03 ルネサスエレクトロニクス株式会社 Dc/dcコンバータ用半導体装置
JP4432953B2 (ja) * 2006-09-27 2010-03-17 株式会社日立製作所 半導体電力変換装置
CN102428634B (zh) * 2009-05-19 2014-09-17 三菱电机株式会社 栅极驱动电路
US8149600B2 (en) 2009-05-22 2012-04-03 Infineon Technologies Ag System and method for ringing suppression in a switched mode power supply
JP5315155B2 (ja) * 2009-07-23 2013-10-16 日立オートモティブシステムズ株式会社 半導体素子制御装置、車載用電機システム
CA2787064A1 (en) 2010-01-22 2011-07-28 Massachusetts Institute Of Technology Grid-tied power conversion circuits and related techniques
KR101449083B1 (ko) * 2010-05-06 2014-10-13 엘에스산전 주식회사 스위칭 게이트 드라이브
US9793889B2 (en) * 2011-03-15 2017-10-17 Infineon Technologies Ag Semiconductor device including a circuit to compensate for parasitic inductance
EP2789092B1 (en) * 2011-12-07 2020-02-05 TM4 Inc. Turn-off overvoltage limiting for igbt
WO2013138219A1 (en) * 2012-03-12 2013-09-19 Board Of Trustees Of Michigan State University High efficiency gate drive circuit for power transistors
CN104756390B (zh) * 2012-09-24 2018-03-16 Tm4股份有限公司 用于受控电源开关模块的拓扑
ES2745999T3 (es) * 2013-04-04 2020-03-04 Tm4 Inc Célula de conmutación y circuito de compensación para la misma
JP6556712B2 (ja) * 2013-11-01 2019-08-07 ティーエム4・インコーポレーテッド スイッチング過電圧を制限するように構成された電力変換器
KR20160086344A (ko) * 2013-11-14 2016-07-19 티엠4 인코포레이티드 전력 전자 스위치의 턴-온 및 턴-오프를 제어하는 보상 회로, 커뮤테이션 셀 및 전력 변환기
CA2930187A1 (en) * 2013-11-14 2015-05-21 Tm4 Inc. Commutation cell, power converter and compensation circuit having dynamically controlled voltage gains
EP3079245B1 (en) * 2013-12-03 2017-08-30 Ingeteam Power Technology, S.A. Control system and control method for controlling a switching device integrated in an electronic converter and switching cell comprising said system

Also Published As

Publication number Publication date
JP2015503319A (ja) 2015-01-29
EP2789092A4 (en) 2016-05-04
CA2851376C (en) 2021-02-16
JP6239525B2 (ja) 2017-11-29
CA2851376A1 (en) 2013-06-13
US10205405B2 (en) 2019-02-12
EP2789092A1 (en) 2014-10-15
CN103988410A (zh) 2014-08-13
CN103988410B (zh) 2017-10-13
BR112014012206A2 (pt) 2017-05-30
US9608543B2 (en) 2017-03-28
EP2789092B1 (en) 2020-02-05
US20140321178A1 (en) 2014-10-30
WO2013082705A1 (en) 2013-06-13
US20170163172A1 (en) 2017-06-08

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