IN2014CN04462A - - Google Patents
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- Publication number
- IN2014CN04462A IN2014CN04462A IN4462CHN2014A IN2014CN04462A IN 2014CN04462 A IN2014CN04462 A IN 2014CN04462A IN 4462CHN2014 A IN4462CHN2014 A IN 4462CHN2014A IN 2014CN04462 A IN2014CN04462 A IN 2014CN04462A
- Authority
- IN
- India
- Prior art keywords
- transmit path
- driver amplifier
- amplifier
- matching circuit
- bypass
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/213—A variable capacitor being added in the input circuit, e.g. base, gate, of an amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/378—A variable capacitor being added in the output circuit, e.g. collector, drain, of an amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21136—An input signal of a power amplifier being on/off switched
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21175—An output signal of a power amplifier being on/off switched
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7233—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier, switched on or off by putting into parallel or not, by choosing between amplifiers by one or more switch(es), being impedance adapted by switching an adapted passive network
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7239—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/356,492 US8666338B2 (en) | 2012-01-23 | 2012-01-23 | Multi-mode bypass driver amplifier with tunable load matching |
PCT/US2013/022806 WO2013112631A1 (fr) | 2012-01-23 | 2013-01-23 | Amplificateur de commande à contournement multimode à adaptation de charge accordable |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014CN04462A true IN2014CN04462A (fr) | 2015-09-04 |
Family
ID=47684032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN4462CHN2014 IN2014CN04462A (fr) | 2012-01-23 | 2013-01-23 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8666338B2 (fr) |
EP (1) | EP2807744B1 (fr) |
JP (1) | JP5739075B2 (fr) |
KR (1) | KR101547602B1 (fr) |
CN (1) | CN104067513B (fr) |
IN (1) | IN2014CN04462A (fr) |
WO (1) | WO2013112631A1 (fr) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
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US9231536B2 (en) * | 2011-07-24 | 2016-01-05 | Ethertronics, Inc. | Multi-mode multi-band self-realigning power amplifier |
JP2014064148A (ja) * | 2012-09-20 | 2014-04-10 | Sharp Corp | 無線回路および無線回路の制御方法 |
US9130535B2 (en) | 2012-12-20 | 2015-09-08 | Qualcomm Incorporated | Driver amplifier with asymmetrical T-coil matching network |
WO2015123668A1 (fr) | 2014-02-14 | 2015-08-20 | University Of Southern California | Annulation à base d'hybrides en présence d'une désadaptation d'antenne |
US9425746B2 (en) | 2014-03-28 | 2016-08-23 | Qualcomm Incorporated | Spurious signal mitigation for carrier aggregation amplifier |
US10171039B2 (en) * | 2015-08-31 | 2019-01-01 | Infineon Technologies Ag | Devices and methods that facilitate power amplifier off state performance |
US10476530B2 (en) | 2015-10-12 | 2019-11-12 | Qorvo Us, Inc. | Hybrid-coupler-based radio frequency multiplexers |
US11201595B2 (en) * | 2015-11-24 | 2021-12-14 | Skyworks Solutions, Inc. | Cascode power amplifier with switchable output matching network |
US9954267B2 (en) * | 2015-12-28 | 2018-04-24 | Qualcomm Incorporated | Multiplexer design using a 2D passive on glass filter integrated with a 3D through glass via filter |
US10050591B2 (en) * | 2016-03-23 | 2018-08-14 | Cree, Inc. | LC network for a power amplifier with selectable impedance |
US10177723B2 (en) * | 2016-08-30 | 2019-01-08 | Qualcomm Incorporated | Reconfigurable power amplifier |
CN210201797U (zh) * | 2016-09-21 | 2020-03-27 | Qorvo美国公司 | 射频双工器和具有增强隔离的可调谐射频双工器 |
TWI652913B (zh) * | 2016-10-28 | 2019-03-01 | 絡達科技股份有限公司 | 多模多頻之收發器、射頻前端電路及應用其之射頻系統 |
JP2018181943A (ja) | 2017-04-05 | 2018-11-15 | 株式会社村田製作所 | 電力増幅モジュール |
CN106998193B (zh) * | 2017-04-06 | 2020-12-22 | 上海航天测控通信研究所 | S频段中继功放滤波器集成结构 |
US10772052B2 (en) * | 2017-06-16 | 2020-09-08 | Qualcomm Incorporated | Controlling coexistent radio systems in a wireless device |
US10411659B2 (en) * | 2018-01-25 | 2019-09-10 | Cree, Inc. | RF power amplifier with frequency selective impedance matching network |
US11201596B2 (en) * | 2018-01-30 | 2021-12-14 | Aselsan Elektronik Sanayi Ve Ticaret Anonim Sirketi | Power amplifier system |
EP3716493B1 (fr) * | 2019-03-29 | 2021-11-10 | Nokia Solutions and Networks Oy | Agencement de transmission en duplex intégral |
JP2021044713A (ja) | 2019-09-11 | 2021-03-18 | 株式会社村田製作所 | 電力増幅回路 |
KR102188036B1 (ko) * | 2020-05-11 | 2020-12-07 | 국방과학연구소 | 듀플렉서가 통합된 저잡음 증폭기 |
CN113242024B (zh) * | 2021-05-18 | 2023-06-20 | 深圳市时代速信科技有限公司 | 一种射频功率放大器 |
TWI796028B (zh) * | 2021-12-02 | 2023-03-11 | 立積電子股份有限公司 | 射頻裝置及其多頻匹配電路 |
US11689227B1 (en) * | 2021-12-03 | 2023-06-27 | Hangzhou Geo-Chip Technology Co., Ltd. | Broadband power amplifier device and transmitter |
US20230231586A1 (en) * | 2022-01-20 | 2023-07-20 | Qualcomm Incorporated | Constant-phase attenuator techniques in radio frequency front end (rffe) amplifiers |
Family Cites Families (23)
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US5093728A (en) * | 1990-08-02 | 1992-03-03 | Thomson Consumer Electronics, Inc. | Beam scan velocity modulation apparatus |
KR100241780B1 (ko) | 1997-12-16 | 2000-02-01 | 윤종용 | 무선 통신 단말기의 전원 절약 장치 |
US6313698B1 (en) | 1999-09-24 | 2001-11-06 | Qualcomm Incorporated | Method and apparatus for wireless phone transmit power amplification with reduced power consumption |
US6681101B1 (en) | 2000-01-11 | 2004-01-20 | Skyworks Solutions, Inc. | RF transmitter with extended efficient power control range |
JP2002217660A (ja) * | 2001-01-17 | 2002-08-02 | Hitachi Kokusai Electric Inc | 可変利得増幅回路 |
US6806768B2 (en) | 2001-10-31 | 2004-10-19 | Qualcomm Incorporated | Balanced power amplifier with a bypass structure |
KR100651159B1 (ko) | 2002-06-01 | 2006-11-29 | 김송강 | 고효율 전력 증폭기 |
US7170349B2 (en) | 2004-09-21 | 2007-01-30 | Scintera Networks, Inc. | Low voltage broadband gain cell |
US7385445B2 (en) | 2005-07-21 | 2008-06-10 | Triquint Semiconductor, Inc. | High efficiency amplifier circuits having bypass paths |
US7630693B2 (en) | 2006-11-16 | 2009-12-08 | Freescale Semiconductor, Inc. | Transmitter with improved power efficiency |
US8170505B2 (en) | 2008-07-30 | 2012-05-01 | Qualcomm Incorporated | Driver amplifier having a programmable output impedance adjustment circuit |
US8253496B2 (en) | 2008-10-31 | 2012-08-28 | Micro Mobio Corporation | Linear RF power amplifier with frequency-selectable impedance matching |
US8666340B2 (en) | 2009-03-03 | 2014-03-04 | Broadcom Corporation | Method and system for on-chip impedance control to impedance match a configurable front end |
US8971830B2 (en) | 2009-05-12 | 2015-03-03 | Qualcomm Incorporated | Multi-mode multi-band power amplifier module |
US8432237B2 (en) | 2009-05-21 | 2013-04-30 | Qualcomm, Incorporated | Output circuit with integrated impedance matching, power combining and filtering for power amplifiers and other circuits |
CN201476827U (zh) * | 2009-07-24 | 2010-05-19 | 周国隆 | 多相流测量装置 |
US8536950B2 (en) * | 2009-08-03 | 2013-09-17 | Qualcomm Incorporated | Multi-stage impedance matching |
US8779857B2 (en) | 2009-08-14 | 2014-07-15 | Qualcomm Incorporated | Amplifier with variable matching circuit to improve linearity |
US8072272B2 (en) | 2009-08-19 | 2011-12-06 | Qualcomm, Incorporated | Digital tunable inter-stage matching circuit |
JP5442358B2 (ja) | 2009-08-25 | 2014-03-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8181140B2 (en) | 2009-11-09 | 2012-05-15 | Xilinx, Inc. | T-coil network design for improved bandwidth and electrostatic discharge immunity |
US8149050B2 (en) | 2009-11-13 | 2012-04-03 | Qualcomm, Incorporated | Cascaded amplifiers with transformer-based bypass mode |
US8244310B2 (en) | 2010-02-16 | 2012-08-14 | Research In Motion Limited | Mobile communication device employing power pack with multiple pairs of taps |
-
2012
- 2012-01-23 US US13/356,492 patent/US8666338B2/en active Active
-
2013
- 2013-01-23 WO PCT/US2013/022806 patent/WO2013112631A1/fr active Application Filing
- 2013-01-23 JP JP2014553544A patent/JP5739075B2/ja not_active Expired - Fee Related
- 2013-01-23 EP EP13703669.5A patent/EP2807744B1/fr active Active
- 2013-01-23 KR KR1020147023279A patent/KR101547602B1/ko active IP Right Grant
- 2013-01-23 IN IN4462CHN2014 patent/IN2014CN04462A/en unknown
- 2013-01-23 CN CN201380006463.2A patent/CN104067513B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP2807744A1 (fr) | 2014-12-03 |
KR101547602B1 (ko) | 2015-08-26 |
CN104067513A (zh) | 2014-09-24 |
JP5739075B2 (ja) | 2015-06-24 |
CN104067513B (zh) | 2016-11-02 |
WO2013112631A1 (fr) | 2013-08-01 |
EP2807744B1 (fr) | 2020-03-18 |
US20130190036A1 (en) | 2013-07-25 |
US8666338B2 (en) | 2014-03-04 |
KR20140116528A (ko) | 2014-10-02 |
JP2015510715A (ja) | 2015-04-09 |
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