IN2014CN04111A - - Google Patents

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Publication number
IN2014CN04111A
IN2014CN04111A IN4111CHN2014A IN2014CN04111A IN 2014CN04111 A IN2014CN04111 A IN 2014CN04111A IN 4111CHN2014 A IN4111CHN2014 A IN 4111CHN2014A IN 2014CN04111 A IN2014CN04111 A IN 2014CN04111A
Authority
IN
India
Prior art keywords
coupled
power amplifier
amplifier
wave
amplifier stages
Prior art date
Application number
Other languages
English (en)
Inventor
Saihua Lin
Yongwang Ding
Cheol Woong Lee
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2014CN04111A publication Critical patent/IN2014CN04111A/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42Modifications of amplifiers to extend the bandwidth
    • H03F1/48Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
    • H03F1/486Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with IC amplifier blocks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34Negative-feedback-circuit arrangements with or without positive feedback
    • H03F1/342Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52Circuit arrangements for protecting such amplifiers
    • H03F1/523Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • H03F1/565Modifications of input or output impedances, not otherwise provided for using inductive elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/135Indexing scheme relating to amplifiers there being a feedback over one or more internal stages in the global amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/222A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/255Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/36Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/405Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/423Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
IN4111CHN2014 2011-12-15 2012-12-14 IN2014CN04111A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/327,479 US8729962B2 (en) 2011-12-15 2011-12-15 Millimeter wave power amplifier
PCT/US2012/069944 WO2013090847A1 (en) 2011-12-15 2012-12-14 Millimeter wave power amplifier

Publications (1)

Publication Number Publication Date
IN2014CN04111A true IN2014CN04111A (zh) 2015-07-10

Family

ID=47604077

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4111CHN2014 IN2014CN04111A (zh) 2011-12-15 2012-12-14

Country Status (7)

Country Link
US (1) US8729962B2 (zh)
EP (1) EP2792067B1 (zh)
JP (1) JP6109849B2 (zh)
KR (1) KR101577587B1 (zh)
CN (1) CN103999359B (zh)
IN (1) IN2014CN04111A (zh)
WO (1) WO2013090847A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10291183B1 (en) 2018-02-28 2019-05-14 Globalfoundries Inc. Method and apparatus for using back gate biasing for power amplifiers for millimeter wave devices
CN110995290A (zh) * 2018-09-29 2020-04-10 天津大学青岛海洋技术研究院 一种支持uwb和fmcw双模的宽带射频收发机架构
EP3930185A1 (en) 2020-06-26 2021-12-29 NXP USA, Inc. Amplifier circuit with an output limiter

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US5469114A (en) 1994-10-03 1995-11-21 Advanced Milliwave Laboratories, Inc. Loss less RF feedback for power amplifier linearization
CN1081850C (zh) 1995-09-29 2002-03-27 松下电器产业株式会社 功率放大器和通信单元
US6150884A (en) 1998-05-13 2000-11-21 Texas Instruments Incorporated Multistage amplifier circuit with improved nested transconductance capacitance compensation
GB2354125A (en) 1999-09-09 2001-03-14 Ericsson Telefon Ab L M A TDMA transmitter with feedback power control loop offset compensation
US7061313B2 (en) 2000-05-05 2006-06-13 Telefonaktiebolaget Lm Ericsson (Publ) Dual feedback linear amplifier
US6633751B1 (en) 2000-09-21 2003-10-14 Skyworks Solutions, Inc. System for a dual feedback translation loop for power amplifier feedback control
US7276965B1 (en) 2001-03-13 2007-10-02 Marvell International Ltd. Nested transimpedance amplifier
JP3880329B2 (ja) 2001-04-20 2007-02-14 株式会社日立国際電気 ループゲイン制御方法及び電力増幅回路
US7212070B2 (en) 2003-12-22 2007-05-01 Silicon Laboratories Inc. Circuit and method of reducing noise in an RF power amplifier
JP4775686B2 (ja) * 2004-02-24 2011-09-21 日立金属株式会社 積層ローパスフィルタ及びそれを用いた高周波スイッチモジュール
US7023271B1 (en) * 2004-03-31 2006-04-04 Marvell International Ltd. Variable-gain constant-bandwidth transimpedance amplifier
US7385447B1 (en) 2004-06-28 2008-06-10 Anadigics, Inc. Power amplifier having curve-fitting predistorter
EP1672784B1 (en) 2004-12-01 2011-05-04 Alcatel Lucent Power amplifier
US7183842B1 (en) 2005-05-26 2007-02-27 Yu Hei Sunny Wai Optimum composite cascode amplifier
US7423483B1 (en) * 2005-06-20 2008-09-09 Marvell International Ltd. Increasing amplifier bandwidth by positive capacitive feedback
JP2007036420A (ja) * 2005-07-25 2007-02-08 D & M Holdings Inc 増幅装置
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JP4485487B2 (ja) * 2006-05-11 2010-06-23 シャープ株式会社 電力増幅器
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JP2009290411A (ja) * 2008-05-28 2009-12-10 Nec Electronics Corp 低雑音受信装置
ATE506746T1 (de) 2008-09-09 2011-05-15 Alcatel Lucent Stromverstärkerlinearisierung unter verwendung von hochfrequenz-feedback
DE102008050743B4 (de) * 2008-10-08 2016-11-17 Qualcomm Technologies, Inc. (N.D.Ges.D. Staates Delaware) Impedanzanpass-Schaltung zur Anpassung von Planarantennen
KR101079015B1 (ko) * 2009-11-18 2011-11-01 순천향대학교 산학협력단 합성 우좌향 전송선로를 이용한 이중대역 고주파 증폭기
EP2522072B1 (en) 2010-01-04 2020-07-29 Marvell Asia Pte, Ltd. Power amplifier with feedback impedance for stable output

Also Published As

Publication number Publication date
KR20140102297A (ko) 2014-08-21
US20130154747A1 (en) 2013-06-20
WO2013090847A1 (en) 2013-06-20
CN103999359A (zh) 2014-08-20
EP2792067A1 (en) 2014-10-22
KR101577587B1 (ko) 2015-12-15
JP2015505203A (ja) 2015-02-16
US8729962B2 (en) 2014-05-20
CN103999359B (zh) 2016-05-11
JP6109849B2 (ja) 2017-04-05
EP2792067B1 (en) 2020-04-29

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