IN2014CN04111A - - Google Patents

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Publication number
IN2014CN04111A
IN2014CN04111A IN4111CHN2014A IN2014CN04111A IN 2014CN04111 A IN2014CN04111 A IN 2014CN04111A IN 4111CHN2014 A IN4111CHN2014 A IN 4111CHN2014A IN 2014CN04111 A IN2014CN04111 A IN 2014CN04111A
Authority
IN
India
Prior art keywords
coupled
power amplifier
amplifier
wave
amplifier stages
Prior art date
Application number
Inventor
Saihua Lin
Yongwang Ding
Cheol Woong Lee
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2014CN04111A publication Critical patent/IN2014CN04111A/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
    • H03F1/486—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with IC amplifier blocks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/135—Indexing scheme relating to amplifiers there being a feedback over one or more internal stages in the global amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/255—Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/405—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

A millimeter wave power amplifier is disclosed. In an exemplary embodiment a MM wave power amplifier (300) includes a plurality of amplifier stages (302 304 306 308) coupled together to receive a MM wave input signal and produce an amplified MM wave output signal and one or more feedback elements (310 312) coupled across the amplifier stages (302 304 306 308) each feedback element (310 312) coupled across an odd number of the amplifier stages (302 304 306 308) to increase an operating bandwidth of the power amplifier (300).
IN4111CHN2014 2011-12-15 2012-12-14 IN2014CN04111A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/327,479 US8729962B2 (en) 2011-12-15 2011-12-15 Millimeter wave power amplifier
PCT/US2012/069944 WO2013090847A1 (en) 2011-12-15 2012-12-14 Millimeter wave power amplifier

Publications (1)

Publication Number Publication Date
IN2014CN04111A true IN2014CN04111A (en) 2015-07-10

Family

ID=47604077

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4111CHN2014 IN2014CN04111A (en) 2011-12-15 2012-12-14

Country Status (7)

Country Link
US (1) US8729962B2 (en)
EP (1) EP2792067B1 (en)
JP (1) JP6109849B2 (en)
KR (1) KR101577587B1 (en)
CN (1) CN103999359B (en)
IN (1) IN2014CN04111A (en)
WO (1) WO2013090847A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10291183B1 (en) 2018-02-28 2019-05-14 Globalfoundries Inc. Method and apparatus for using back gate biasing for power amplifiers for millimeter wave devices
CN110995290A (en) * 2018-09-29 2020-04-10 天津大学青岛海洋技术研究院 Wideband radio frequency transceiver architecture supporting UWB and FMCW dual modes

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US5166639A (en) * 1991-10-29 1992-11-24 Sgs-Thomson Microelectronics, Inc. High gain mololithic microwave integrated circuit amplifier
JPH06150653A (en) * 1992-10-30 1994-05-31 Fujitsu Ltd Level shift amplifier circuit
US5469114A (en) 1994-10-03 1995-11-21 Advanced Milliwave Laboratories, Inc. Loss less RF feedback for power amplifier linearization
CN1081850C (en) 1995-09-29 2002-03-27 松下电器产业株式会社 Power amplifier and communication device
US6150884A (en) 1998-05-13 2000-11-21 Texas Instruments Incorporated Multistage amplifier circuit with improved nested transconductance capacitance compensation
GB2354125A (en) 1999-09-09 2001-03-14 Ericsson Telefon Ab L M A TDMA transmitter with feedback power control loop offset compensation
US7061313B2 (en) 2000-05-05 2006-06-13 Telefonaktiebolaget Lm Ericsson (Publ) Dual feedback linear amplifier
US6633751B1 (en) 2000-09-21 2003-10-14 Skyworks Solutions, Inc. System for a dual feedback translation loop for power amplifier feedback control
US7276965B1 (en) 2001-03-13 2007-10-02 Marvell International Ltd. Nested transimpedance amplifier
JP3880329B2 (en) 2001-04-20 2007-02-14 株式会社日立国際電気 Loop gain control method and power amplifier circuit
US7212070B2 (en) 2003-12-22 2007-05-01 Silicon Laboratories Inc. Circuit and method of reducing noise in an RF power amplifier
JP4775686B2 (en) * 2004-02-24 2011-09-21 日立金属株式会社 Multilayer low-pass filter and high-frequency switch module using the same
US7023271B1 (en) * 2004-03-31 2006-04-04 Marvell International Ltd. Variable-gain constant-bandwidth transimpedance amplifier
US7385447B1 (en) 2004-06-28 2008-06-10 Anadigics, Inc. Power amplifier having curve-fitting predistorter
DE602004032559D1 (en) 2004-12-01 2011-06-16 Alcatel Lucent power amplifier
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US7423483B1 (en) * 2005-06-20 2008-09-09 Marvell International Ltd. Increasing amplifier bandwidth by positive capacitive feedback
JP2007036420A (en) * 2005-07-25 2007-02-08 D & M Holdings Inc Amplifier
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JP4485487B2 (en) * 2006-05-11 2010-06-23 シャープ株式会社 Power amplifier
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JP2009290411A (en) * 2008-05-28 2009-12-10 Nec Electronics Corp Low-noise receiver
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KR101079015B1 (en) * 2009-11-18 2011-11-01 순천향대학교 산학협력단 Dual Band High Frequency Amplifier using Composite Right/Left Handed Transmission Line
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Also Published As

Publication number Publication date
JP6109849B2 (en) 2017-04-05
KR101577587B1 (en) 2015-12-15
US8729962B2 (en) 2014-05-20
EP2792067A1 (en) 2014-10-22
CN103999359A (en) 2014-08-20
WO2013090847A1 (en) 2013-06-20
EP2792067B1 (en) 2020-04-29
JP2015505203A (en) 2015-02-16
KR20140102297A (en) 2014-08-21
CN103999359B (en) 2016-05-11
US20130154747A1 (en) 2013-06-20

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