IN2014DN09407A - - Google Patents

Info

Publication number
IN2014DN09407A
IN2014DN09407A IN9407DEN2014A IN2014DN09407A IN 2014DN09407 A IN2014DN09407 A IN 2014DN09407A IN 9407DEN2014 A IN9407DEN2014 A IN 9407DEN2014A IN 2014DN09407 A IN2014DN09407 A IN 2014DN09407A
Authority
IN
India
Prior art keywords
amplifier
microstrip
main amplifier
peak
main
Prior art date
Application number
Inventor
Zhongyu Liao
Yuanchun Xie
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of IN2014DN09407A publication Critical patent/IN2014DN09407A/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/255—Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/543—A transmission line being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/546—A tunable capacitance being present in an amplifier circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

A Doherty amplifier (300) is provided, it comprises: a main amplifier (301) and a peak amplifier (302); a first microstrip (303) with ?/4 electric length connected between the main amplifier and the peak amplifier; a second microstrip (304) with ?/4 electric length connected between a junction of outputs of the peak amplifier and the main amplifier, and an output terminal (306); at least a tuner (305) for adjusting radius of VSWR circle of the main amplifier and connected in series with the first microstrip (303), between the main amplifier (301) and the peak amplifier (302) based on input signal power. The back -off power level efficiency is increased by enlarge the VSWR radius with the new Doherty structure.
IN9407DEN2014 2012-06-21 2012-06-21 IN2014DN09407A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2012/000862 WO2013188994A1 (en) 2012-06-21 2012-06-21 Doherty amplifier

Publications (1)

Publication Number Publication Date
IN2014DN09407A true IN2014DN09407A (en) 2015-07-17

Family

ID=49767996

Family Applications (1)

Application Number Title Priority Date Filing Date
IN9407DEN2014 IN2014DN09407A (en) 2012-06-21 2012-06-21

Country Status (5)

Country Link
US (1) US9484864B2 (en)
EP (1) EP2865095B1 (en)
CN (1) CN104604125A (en)
IN (1) IN2014DN09407A (en)
WO (1) WO2013188994A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6403801B2 (en) * 2015-01-16 2018-10-10 株式会社日立国際電気 Power amplifier
CN106357223A (en) * 2015-07-17 2017-01-25 中兴通讯股份有限公司 Power amplifier circuit and load impedance modulating method thereof
WO2017199366A1 (en) * 2016-05-18 2017-11-23 三菱電機株式会社 Doherty amplifier
US11114988B2 (en) 2019-05-24 2021-09-07 Cree, Inc. Doherty amplifier circuit with integrated harmonic termination
US20250357897A1 (en) * 2024-05-17 2025-11-20 Nxp Usa, Inc. Doherty power amplifiers with reconfigurable output circuits

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019578A (en) 2005-07-05 2007-01-25 Hitachi Ltd Power amplifier and transmitter using the same
JP5474764B2 (en) 2007-04-23 2014-04-16 ダリ システムズ カンパニー リミテッド N-way distributed power amplifier
EP2215716B1 (en) * 2007-11-19 2019-04-24 Telefonaktiebolaget LM Ericsson (publ) A composite amplifier, a radio terminal and a method for improving the efficiency of the composite amplifier
CN101783652A (en) 2010-01-18 2010-07-21 顾晓龙 Easy realized multi-stage Doherty power amplifier
US8314654B2 (en) * 2010-05-17 2012-11-20 Alcatel Lucent Multi-band high-efficiency Doherty amplifier
US8576010B2 (en) * 2010-10-19 2013-11-05 Samsung Electronics Co., Ltd. Apparatus and method for a switched capacitor architecture for multi-band doherty power amplifiers
CN102355198B (en) * 2011-08-01 2013-11-27 深圳大学 Multi-path asymmetrical Doherty power amplifier
US8717102B2 (en) * 2011-09-27 2014-05-06 Infineon Technologies Ag RF device with compensatory resonator matching topology
US8717099B2 (en) * 2012-03-16 2014-05-06 Infineon Technologies Ag Wideband doherty amplifier circuit with peaking impedance absorption
US9537198B2 (en) * 2013-10-01 2017-01-03 Telefonaktiebolaget L M Ericsson (Publ) Wideband impedance transformer

Also Published As

Publication number Publication date
US20150130541A1 (en) 2015-05-14
CN104604125A (en) 2015-05-06
EP2865095B1 (en) 2020-02-26
WO2013188994A1 (en) 2013-12-27
US9484864B2 (en) 2016-11-01
EP2865095A1 (en) 2015-04-29
EP2865095A4 (en) 2016-01-27

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