IN2014CN03496A - - Google Patents

Info

Publication number
IN2014CN03496A
IN2014CN03496A IN3496CHN2014A IN2014CN03496A IN 2014CN03496 A IN2014CN03496 A IN 2014CN03496A IN 3496CHN2014 A IN3496CHN2014 A IN 3496CHN2014A IN 2014CN03496 A IN2014CN03496 A IN 2014CN03496A
Authority
IN
India
Prior art keywords
field lines
charges
direct conversion
electric field
drifting
Prior art date
Application number
Other languages
English (en)
Inventor
Klaus Jürgen Engel
Christoph Herrmann
Original Assignee
Koninkl Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Nv filed Critical Koninkl Philips Nv
Publication of IN2014CN03496A publication Critical patent/IN2014CN03496A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
IN3496CHN2014 2011-11-09 2012-11-07 IN2014CN03496A (OSRAM)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161557480P 2011-11-09 2011-11-09
PCT/IB2012/056231 WO2013068944A1 (en) 2011-11-09 2012-11-07 Radiation-sensitive detector device with charge-rejecting segment gaps

Publications (1)

Publication Number Publication Date
IN2014CN03496A true IN2014CN03496A (OSRAM) 2015-10-16

Family

ID=47297342

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3496CHN2014 IN2014CN03496A (OSRAM) 2011-11-09 2012-11-07

Country Status (8)

Country Link
US (1) US9069088B2 (OSRAM)
EP (1) EP2748638B1 (OSRAM)
JP (1) JP6251683B2 (OSRAM)
CN (1) CN103917897B (OSRAM)
BR (1) BR112014010873A8 (OSRAM)
IN (1) IN2014CN03496A (OSRAM)
RU (1) RU2605523C2 (OSRAM)
WO (1) WO2013068944A1 (OSRAM)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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DE102013202630B4 (de) * 2013-02-19 2017-07-06 Siemens Healthcare Gmbh Strahlungsdetektor und medizinisches Diagnosesystem
US10497737B2 (en) * 2013-05-30 2019-12-03 Caeleste Cvba Enhanced dynamic range imaging
DE102014204042A1 (de) * 2014-03-05 2015-09-10 Siemens Aktiengesellschaft Verfahren zur Ansteuerung eines Röntgendetektors und zugehörige Steuereinheit
WO2016066850A1 (en) * 2014-10-31 2016-05-06 Koninklijke Philips N.V. Sensor device and imaging system for detecting radiation signals
EP3161522B1 (en) * 2014-12-05 2018-02-28 Koninklijke Philips N.V. X-ray detector device for inclined angle x-ray radiation
RU2705717C2 (ru) * 2014-12-17 2019-11-11 Конинклейке Филипс Н.В. Детектор и способ для обнаружения ионизирующего излучения
US10641911B2 (en) 2015-12-02 2020-05-05 Shenzhen Xpectvision Technology Co., Ltd. Packaging methods of semiconductor X-ray detectors
DE102016221481B4 (de) 2016-11-02 2021-09-16 Siemens Healthcare Gmbh Strahlungsdetektor mit einer Zwischenschicht
US10156645B2 (en) * 2016-12-23 2018-12-18 General Electric Company Systems and methods for sub-pixel location determination at sidewalls and corners of detectors
EP3404447B1 (de) * 2017-05-17 2019-08-14 Siemens Healthcare GmbH Röntgendetektor aufweisend eine lichtquelle am trägerelement
EP3923036A4 (en) * 2019-05-17 2022-11-02 JX Nippon Mining & Metals Corporation Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate
US11967659B2 (en) 2019-05-17 2024-04-23 Jx Metals Corporation Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate
JP7423423B2 (ja) * 2020-05-28 2024-01-29 株式会社日立製作所 半導体検出器およびその製造方法
US11835666B1 (en) * 2020-07-31 2023-12-05 Redlen Technologies, Inc. Photon counting computed tomography detector with improved count rate stability and method of operating same

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
JPH0679162U (ja) * 1993-04-22 1994-11-04 ジーイー横河メディカルシステム株式会社 半導体ｘ線検出器
US5677539A (en) 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
US6175120B1 (en) 1998-05-08 2001-01-16 The Regents Of The University Of Michigan High-resolution ionization detector and array of such detectors
US6034373A (en) * 1997-12-11 2000-03-07 Imrad Imaging Systems Ltd. Semiconductor radiation detector with reduced surface effects
JP4091334B2 (ja) * 2001-05-11 2008-05-28 富士フイルム株式会社 画像記録方法および装置並びに画像記録媒体
JP3900992B2 (ja) 2002-04-02 2007-04-04 株式会社日立製作所 放射線検出器及び放射線検査装置
CN1230693C (zh) * 2002-11-26 2005-12-07 张亚美 小面积像素电极直接平板x－线探测器
EP1801616A3 (en) * 2003-07-12 2007-07-04 Radiation Watch Ltd Ionising radiation detector
EP1759402B1 (en) * 2004-05-21 2015-07-08 Craig M. Whitehouse Rf surfaces and rf ion guides
EP1779141A2 (en) * 2004-08-13 2007-05-02 Koninklijke Philips Electronics N.V. Solid state radiation detector packaging technique
US7453068B2 (en) 2005-07-06 2008-11-18 Ge Medical Systems Israel, Ltd. Method and apparatus of detecting ionizing radiation
WO2008054862A2 (en) * 2006-04-21 2008-05-08 Ii-Vi Incorporated Radiation detector with co-planar grid structure
CN101542315B (zh) * 2006-11-17 2013-03-20 皇家飞利浦电子股份有限公司 在敏感层上具有多个电极的辐射探测器
JP2010513908A (ja) * 2006-12-22 2010-04-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ エネルギー分解検出システム及び撮像システム
US7955992B2 (en) 2008-08-08 2011-06-07 Redlen Technologies, Inc. Method of passivating and encapsulating CdTe and CZT segmented detectors
WO2010073189A1 (en) * 2008-12-22 2010-07-01 Koninklijke Philips Electronics N.V. Radiation detector with improved charge collection and minimized leakage currents
JP2012114166A (ja) * 2010-11-22 2012-06-14 Canon Inc 検出装置及び放射線検出システム

Also Published As

Publication number Publication date
EP2748638A1 (en) 2014-07-02
EP2748638B1 (en) 2019-09-18
BR112014010873A8 (pt) 2017-06-20
CN103917897A (zh) 2014-07-09
JP2015504513A (ja) 2015-02-12
WO2013068944A1 (en) 2013-05-16
US20140284489A1 (en) 2014-09-25
US9069088B2 (en) 2015-06-30
RU2014123326A (ru) 2015-12-20
JP6251683B2 (ja) 2017-12-20
CN103917897B (zh) 2016-08-17
BR112014010873A2 (pt) 2017-06-13
RU2605523C2 (ru) 2016-12-20

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