IN2014CN02071A - - Google Patents
Info
- Publication number
- IN2014CN02071A IN2014CN02071A IN2071CHN2014A IN2014CN02071A IN 2014CN02071 A IN2014CN02071 A IN 2014CN02071A IN 2071CHN2014 A IN2071CHN2014 A IN 2071CHN2014A IN 2014CN02071 A IN2014CN02071 A IN 2014CN02071A
- Authority
- IN
- India
- Prior art keywords
- random values
- entropy source
- provides
- processing module
- sensing circuit
- Prior art date
Links
- 238000012805 post-processing Methods 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 1
- 230000005415 magnetization Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
- G06F7/58—Random or pseudo-random number generators
- G06F7/588—Random number generators, i.e. based on natural stochastic processes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F5/00—Methods or arrangements for data conversion without changing the order or content of the data handled
- G06F5/01—Methods or arrangements for data conversion without changing the order or content of the data handled for shifting, e.g. justifying, scaling, normalising
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1695—Protection circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1697—Power supply circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M7/00—Conversion of a code where information is represented by a given sequence or number of digits to a code where the same, similar or subset of information is represented by a different sequence or number of digits
- H03M7/30—Compression; Expansion; Suppression of unnecessary data, e.g. redundancy reduction
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2205/00—Indexing scheme relating to group G06F5/00; Methods or arrangements for data conversion without changing the order or content of the data handled
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2207/00—Indexing scheme relating to methods or arrangements for processing data by operating upon the order or content of the data handled
- G06F2207/58—Indexing scheme relating to groups G06F7/58 - G06F7/588
- G06F2207/581—Generating an LFSR sequence, e.g. an m-sequence; sequence may be generated without LFSR, e.g. using Galois Field arithmetic
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Computational Mathematics (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161536769P | 2011-09-20 | 2011-09-20 | |
US13/367,322 US9189201B2 (en) | 2011-09-20 | 2012-02-06 | Entropy source with magneto-resistive element for random number generator |
PCT/US2012/055785 WO2013043543A2 (en) | 2011-09-20 | 2012-09-17 | Entropy source with magneto-resistive element for random number generator |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014CN02071A true IN2014CN02071A (de) | 2015-05-29 |
Family
ID=47881665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN2071CHN2014 IN2014CN02071A (de) | 2011-09-20 | 2012-09-17 |
Country Status (8)
Country | Link |
---|---|
US (2) | US9189201B2 (de) |
EP (1) | EP2758865B1 (de) |
JP (1) | JP5826400B2 (de) |
KR (1) | KR101617832B1 (de) |
CN (1) | CN103890712B (de) |
IN (1) | IN2014CN02071A (de) |
TW (1) | TW201319930A (de) |
WO (1) | WO2013043543A2 (de) |
Families Citing this family (63)
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US9110746B2 (en) * | 2012-09-04 | 2015-08-18 | Qualcomm Incorporated | Magnetic tunnel junction based random number generator |
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US9311051B2 (en) * | 2013-01-10 | 2016-04-12 | Advanced Micro Devices, Inc. | Hardware random number generator |
US9214214B2 (en) * | 2013-09-09 | 2015-12-15 | Qualcomm Incorporated | Physically unclonable function based on the random logical state of magnetoresistive random-access memory |
KR20160061316A (ko) * | 2013-09-27 | 2016-05-31 | 인텔 코포레이션 | 전압 제어된 나노-자기 난수 발생기 |
US9417845B2 (en) * | 2013-10-02 | 2016-08-16 | Qualcomm Incorporated | Method and apparatus for producing programmable probability distribution function of pseudo-random numbers |
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US9459835B2 (en) * | 2014-01-15 | 2016-10-04 | HGST Netherlands B.V. | Random number generator by superparamagnetism |
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US9529570B2 (en) | 2014-03-19 | 2016-12-27 | Seagate Technology Llc | Random number generation using pulsed programming parameters |
JP6380804B2 (ja) | 2014-04-16 | 2018-08-29 | パナソニックIpマネジメント株式会社 | 乱数処理装置および乱数処理方法 |
EP2940923B1 (de) * | 2014-04-28 | 2018-09-05 | Université de Genève | Verfahren und Vorrichtung für einen optischen Quantumzufallszahlengenerator |
CA2948408C (en) | 2014-05-09 | 2023-03-07 | Quantum Numbers Corp. | Method for generating random numbers and associated random number generator |
WO2015172352A1 (en) | 2014-05-15 | 2015-11-19 | Seagate Technology Llc | Storage device tampering detection |
US10317480B2 (en) * | 2014-10-15 | 2019-06-11 | Infineon Technologies Ag | Magneto resistive device |
US9846569B1 (en) | 2014-11-17 | 2017-12-19 | Seagate Technology Llc | Random values based on a random components of noise |
US9489999B2 (en) | 2014-11-26 | 2016-11-08 | Qualcomm Incorporated | Magnetic tunnel junction resistance comparison based physical unclonable function |
JP6423270B2 (ja) * | 2014-12-26 | 2018-11-14 | 株式会社メガチップス | 乱数生成装置及び乱数生成方法 |
DE102015102363A1 (de) * | 2015-02-19 | 2016-08-25 | Infineon Technologies Ag | Anordnung und verfahren zum überprüfen der entropie einer zufallszahlenfolge |
EP3062215B1 (de) * | 2015-02-24 | 2018-04-04 | Crocus Technology S.A. | Mram-basierte programmierbare magnetische vorrichtung zur erzeugung von zufallszahlen |
CN107995976B (zh) * | 2015-06-17 | 2022-03-18 | 英特尔公司 | 随机数发生器 |
JP6617924B2 (ja) * | 2015-06-18 | 2019-12-11 | パナソニックIpマネジメント株式会社 | 耐タンパ性を有する不揮発性メモリ装置および集積回路カード、不揮発性メモリ装置の認証方法、個体識別情報生成方法 |
JP6587188B2 (ja) * | 2015-06-18 | 2019-10-09 | パナソニックIpマネジメント株式会社 | 乱数処理装置、集積回路カード、および乱数処理方法 |
US9813049B2 (en) * | 2015-08-12 | 2017-11-07 | Qualcomm Incorporated | Comparator including a magnetic tunnel junction (MTJ) device and a transistor |
US10521618B1 (en) * | 2015-10-20 | 2019-12-31 | Marvell International Ltd. | Methods and apparatus for secure root key provisioning |
EP3182638B1 (de) * | 2015-12-18 | 2019-12-25 | ID Quantique S.A. | Vorrichtung und verfahren zum hinzufügen einer entropiequelle zu quanten-schlüsselverteilungssystemen |
DE102016207451A1 (de) * | 2016-04-29 | 2017-11-02 | Siemens Aktiengesellschaft | Verfahren und Vorrichtung zum Erzeugen von Zufallsbits |
CN106168896B (zh) * | 2016-07-05 | 2018-10-09 | 北京大学深圳研究生院 | 一种真随机数发生器 |
US10217498B2 (en) * | 2016-09-12 | 2019-02-26 | Qualcomm Incorporated | Techniques for preventing tampering with PROM settings |
CN108399328B (zh) * | 2017-02-08 | 2021-04-27 | 新唐科技股份有限公司 | 系统存储器内容认证设备及方法 |
US10536266B2 (en) | 2017-05-02 | 2020-01-14 | Seagate Technology Llc | Cryptographically securing entropy for later use |
TWI634478B (zh) * | 2017-07-18 | 2018-09-01 | 展達通訊股份有限公司 | 真亂數產生系統及其真亂數產生之方法 |
US10965456B2 (en) | 2017-09-25 | 2021-03-30 | The Boeing Company | Systems and methods for facilitating data encryption and decryption and erasing of associated information |
US10860403B2 (en) * | 2017-09-25 | 2020-12-08 | The Boeing Company | Systems and methods for facilitating truly random bit generation |
US10924263B2 (en) | 2017-09-25 | 2021-02-16 | The Boeing Company | Systems and methods for facilitating iterative key generation and data encryption and decryption |
US11036472B2 (en) | 2017-11-08 | 2021-06-15 | Samsung Electronics Co., Ltd. | Random number generator generating random number by using at least two algorithms, and security device comprising the random number generator |
US11082432B2 (en) | 2017-12-05 | 2021-08-03 | Intel Corporation | Methods and apparatus to support reliable digital communications without integrity metadata |
US10878897B2 (en) * | 2018-01-04 | 2020-12-29 | Silicon Storage Technology, Inc. | System and method for storing and retrieving multibit data in non-volatile memory using current multipliers |
US10168996B1 (en) | 2018-01-15 | 2019-01-01 | Quantum Numbers Corp. | Method and system for generating a random bit sample |
US10698658B2 (en) * | 2018-02-12 | 2020-06-30 | Seagate Technology Llc | Random number generation from spin torque oscillator noise |
CN108345446B (zh) * | 2018-03-08 | 2021-08-10 | 太原理工大学 | 一种高速随机数产生方法及装置 |
EP3544014B1 (de) * | 2018-03-20 | 2020-07-15 | Crocus Technology S.A. | Mlu-basierte magnetische vorrichtung mit einer authentifizierung und physikalischer unklonbarer funktion und authentifizierungsverfahren unter verwendung dieser vorrichtung |
US10311930B1 (en) * | 2018-04-05 | 2019-06-04 | Qualcomm Incorporated | One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations |
CN108509180B (zh) * | 2018-04-13 | 2021-04-06 | 太原理工大学 | 一种基于二输入异或门低功耗随机数产生装置 |
US10732933B2 (en) * | 2018-05-10 | 2020-08-04 | Sandisk Technologies Llc | Generating random bitstreams with magnetic tunnel junctions |
KR102483374B1 (ko) | 2018-05-11 | 2022-12-30 | 한국전자통신연구원 | 양자 난수 생성 장치 및 방법 |
US10515697B1 (en) * | 2018-06-29 | 2019-12-24 | Intel Corporation | Apparatuses and methods to control operations performed on resistive memory cells |
US11416416B2 (en) * | 2019-01-13 | 2022-08-16 | Ememory Technology Inc. | Random code generator with non-volatile memory |
KR102182232B1 (ko) * | 2019-01-17 | 2020-11-24 | 한양대학교 산학협력단 | 자기터널접합구조체 기반 연산 소자 |
US11023209B2 (en) * | 2019-01-25 | 2021-06-01 | International Business Machines Corporation | On-chip hardware random number generator |
KR102191305B1 (ko) * | 2019-07-09 | 2020-12-15 | 국민대학교산학협력단 | 경량 엔트로피 관리 장치 및 방법 |
DE102020119273A1 (de) * | 2019-08-30 | 2021-03-04 | Taiwan Semiconductor Manufacturing Co. Ltd. | Speichervorrichtung mit abstimmbarem probabilistischem Zustand |
US11521664B2 (en) | 2019-08-30 | 2022-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device with tunable probabilistic state |
US11573768B2 (en) * | 2020-02-11 | 2023-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and method for generating random bit stream with configurable ratio of bit values |
KR102495632B1 (ko) * | 2020-11-26 | 2023-02-06 | 포항공과대학교 산학협력단 | 아날로그 신호를 확률 신호로 변환하는 역치 변환 소자 기반의 아날로그-확률 변환 장치 |
KR102499682B1 (ko) * | 2020-11-26 | 2023-02-14 | 한국과학기술연구원 | 확률론적 자기터널접합구조를 이용한 랜덤 넘버 발생기 |
CN112835556B (zh) * | 2021-01-28 | 2024-01-16 | 广东省大湾区集成电路与系统应用研究院 | 一种基于mtj的真随机数发生器 |
US20220343030A1 (en) * | 2021-04-26 | 2022-10-27 | Everspin Technologies, Inc. | Cryptographic mram and methods thereof |
CN114461178A (zh) * | 2022-02-15 | 2022-05-10 | 清华大学 | 随机数生成器、电子装置和操作方法 |
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DE602005008362D1 (de) | 2005-01-28 | 2008-09-04 | Infineon Technologies Ag | Oszillator-basierter Zufallszahlengenerator |
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JP4625936B2 (ja) | 2007-06-12 | 2011-02-02 | 独立行政法人産業技術総合研究所 | 乱数発生器 |
US8495118B2 (en) | 2008-10-30 | 2013-07-23 | Seagate Technology Llc | Tunable random bit generator with magnetic tunnel junction |
US20100174766A1 (en) | 2009-01-06 | 2010-07-08 | Seagate Technology Llc | Magnetic Precession Based True Random Number Generator |
US8886692B2 (en) * | 2009-02-09 | 2014-11-11 | Samsung Electronics Co., Ltd. | Apparatus for generating random number |
JP5100677B2 (ja) | 2009-02-09 | 2012-12-19 | 株式会社東芝 | 乱数発生器および乱数発生方法 |
US8526252B2 (en) | 2009-03-17 | 2013-09-03 | Seagate Technology Llc | Quiescent testing of non-volatile memory array |
JP2011013901A (ja) | 2009-07-01 | 2011-01-20 | Sony Corp | 乱数発生装置 |
CN101620523B (zh) * | 2009-07-29 | 2011-04-13 | 深圳国微技术有限公司 | 一种随机数发生器电路 |
JP2011113136A (ja) | 2009-11-24 | 2011-06-09 | Sony Corp | 乱数発生装置、乱数発生方法及びセキュリティチップ |
-
2012
- 2012-02-06 US US13/367,322 patent/US9189201B2/en active Active
- 2012-09-17 JP JP2014531893A patent/JP5826400B2/ja not_active Expired - Fee Related
- 2012-09-17 IN IN2071CHN2014 patent/IN2014CN02071A/en unknown
- 2012-09-17 WO PCT/US2012/055785 patent/WO2013043543A2/en active Application Filing
- 2012-09-17 KR KR1020147010432A patent/KR101617832B1/ko not_active IP Right Cessation
- 2012-09-17 CN CN201280051736.0A patent/CN103890712B/zh active Active
- 2012-09-17 EP EP12798033.2A patent/EP2758865B1/de active Active
- 2012-09-19 TW TW101134319A patent/TW201319930A/zh unknown
-
2015
- 2015-10-13 US US14/882,255 patent/US20170010864A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20140069195A (ko) | 2014-06-09 |
WO2013043543A2 (en) | 2013-03-28 |
JP2014531669A (ja) | 2014-11-27 |
CN103890712B (zh) | 2017-02-15 |
EP2758865B1 (de) | 2017-10-18 |
WO2013043543A3 (en) | 2013-06-06 |
JP5826400B2 (ja) | 2015-12-02 |
KR101617832B1 (ko) | 2016-05-03 |
CN103890712A (zh) | 2014-06-25 |
US20130073598A1 (en) | 2013-03-21 |
US9189201B2 (en) | 2015-11-17 |
US20170010864A1 (en) | 2017-01-12 |
EP2758865A2 (de) | 2014-07-30 |
TW201319930A (zh) | 2013-05-16 |
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